N. Zhang

497 total citations
8 papers, 429 citations indexed

About

N. Zhang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, N. Zhang has authored 8 papers receiving a total of 429 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Condensed Matter Physics, 4 papers in Electrical and Electronic Engineering and 4 papers in Materials Chemistry. Recurrent topics in N. Zhang's work include GaN-based semiconductor devices and materials (6 papers), Semiconductor Quantum Structures and Devices (2 papers) and Porphyrin and Phthalocyanine Chemistry (2 papers). N. Zhang is often cited by papers focused on GaN-based semiconductor devices and materials (6 papers), Semiconductor Quantum Structures and Devices (2 papers) and Porphyrin and Phthalocyanine Chemistry (2 papers). N. Zhang collaborates with scholars based in United States. N. Zhang's co-authors include Umesh K. Mishra, Steven P. DenBaars, James S. Speck, S. Keller, P. Fini, Lingyan Zhao, H. Marchand, Jaime A. Freitas, S. Heikman and Giacinta Parish and has published in prestigious journals such as Journal of Applied Physics, Chemical Physics Letters and Electronics Letters.

In The Last Decade

N. Zhang

7 papers receiving 419 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. Zhang United States	4	411	225	174	162	122	8	429
Takeshi Eri Japan	8	491 1.2×	247 1.1×	248 1.4×	246 1.5×	90 0.7×	8	521
Shuichi Kubo Japan	5	387 0.9×	236 1.0×	156 0.9×	208 1.3×	61 0.5×	9	422
S. K. Lee South Korea	10	504 1.2×	270 1.2×	251 1.4×	241 1.5×	88 0.7×	13	552
D. A. Stocker United States	8	359 0.9×	169 0.8×	160 0.9×	191 1.2×	61 0.5×	11	393
G. Steude Germany	9	426 1.0×	267 1.2×	154 0.9×	217 1.3×	65 0.5×	12	465
K. Kornitzer Germany	10	338 0.8×	162 0.7×	114 0.7×	148 0.9×	64 0.5×	11	366
Chang Min Jeon South Korea	11	364 0.9×	193 0.9×	257 1.5×	134 0.8×	66 0.5×	24	439
Pradeep Rajagopal United States	9	339 0.8×	128 0.6×	170 1.0×	168 1.0×	122 1.0×	16	387
Naoyuki Nakada Japan	10	443 1.1×	210 0.9×	176 1.0×	160 1.0×	113 0.9×	11	470
A. Pelzmann Germany	13	372 0.9×	168 0.7×	130 0.7×	161 1.0×	107 0.9×	25	386

Countries citing papers authored by N. Zhang

Since Specialization

Citations

This map shows the geographic impact of N. Zhang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Zhang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Zhang more than expected).

Fields of papers citing papers by N. Zhang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Zhang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Zhang. The network helps show where N. Zhang may publish in the future.

Co-authorship network of co-authors of N. Zhang

This figure shows the co-authorship network connecting the top 25 collaborators of N. Zhang. A scholar is included among the top collaborators of N. Zhang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Zhang. N. Zhang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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8 of 8 papers shown

1.

Coffie, R., S. Heikman, D. Buttari, et al.. (2003). P-GaN/AlGaN/GaN high electron mobility transistors. IRIS UNIMORE (University of Modena and Reggio Emilia). 25–26. 3 indexed citations

2.

Mishra, Umesh K., L. McCarthy, Y. Smorchkova, et al.. (2002). AlGaN-GaN HEMTs and HBTs for microwave power. 35–36.

3.

Marchand, H., Lingyan Zhao, N. Zhang, et al.. (2001). Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors. Journal of Applied Physics. 89(12). 7846–7851. 153 indexed citations

4.

Rumyantsev, S. L., M. S. Shur, R. Gaška, et al.. (2000). Transient processes in AlGaN/GaN heterostructurefield effect transistors. Electronics Letters. 36(8). 757–759. 7 indexed citations

5.

Marchand, H., N. Zhang, Lingyan Zhao, et al.. (1999). Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer. MRS Internet Journal of Nitride Semiconductor Research. 4(1). 110 indexed citations

6.

Keller, S., Giacinta Parish, P. Fini, et al.. (1999). Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures. Journal of Applied Physics. 86(10). 5850–5857. 153 indexed citations

7.

McElvain, Jon S., M. Cha, Honghui Yu, et al.. (1995). Third harmonic generation spectrum of a degenerate ground state conjugated polymer. Direct evidence of simultaneous two- and three-photon resonance. Chemical Physics Letters. 247(3). 221–226. 1 indexed citations

8.

McElvain, Jon S., N. Zhang, C. Halvorson, Fred Wudl, & Alan J. Heeger. (1995). Third harmonic generation spectra of degenerate ground state poly(dipropargyl) amines. Chemical Physics Letters. 232(1-2). 149–153. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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