W. J. Schaff

19.9k total citations · 4 hit papers
359 papers, 16.4k citations indexed

About

W. J. Schaff is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, W. J. Schaff has authored 359 papers receiving a total of 16.4k indexed citations (citations by other indexed papers that have themselves been cited), including 265 papers in Condensed Matter Physics, 207 papers in Atomic and Molecular Physics, and Optics and 180 papers in Electrical and Electronic Engineering. Recurrent topics in W. J. Schaff's work include GaN-based semiconductor devices and materials (255 papers), Semiconductor Quantum Structures and Devices (188 papers) and Ga2O3 and related materials (113 papers). W. J. Schaff is often cited by papers focused on GaN-based semiconductor devices and materials (255 papers), Semiconductor Quantum Structures and Devices (188 papers) and Ga2O3 and related materials (113 papers). W. J. Schaff collaborates with scholars based in United States, Germany and United Kingdom. W. J. Schaff's co-authors include L.F. Eastman, H. J. Lü, W. Walukiewicz, Junqiao Wu, K. M. Yu, Joel W. Ager, O. Ambacher, E. E. Häller, J. R. Shealy and Michael J. Murphy and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

W. J. Schaff

350 papers receiving 15.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

1999 2.3k citations O. Ambacher, J. Smart et al. profile →
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2000 1.3k citations O. Ambacher, B. E. Foutz et al. profile →
Unusual properties of the fundamental band gap of InN

2002 1.2k citations W. Walukiewicz, K. M. Yu et al. Applied Physics Letters profile →
Small band gap bowing in In1−xGaxN alloys

2002 528 citations W. Walukiewicz, K. M. Yu et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by W. J. Schaff

Since Specialization

Citations

This map shows the geographic impact of W. J. Schaff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. J. Schaff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. J. Schaff more than expected).

Fields of papers citing papers by W. J. Schaff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. J. Schaff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. J. Schaff. The network helps show where W. J. Schaff may publish in the future.

Co-authorship network of co-authors of W. J. Schaff

This figure shows the co-authorship network connecting the top 25 collaborators of W. J. Schaff. A scholar is included among the top collaborators of W. J. Schaff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. J. Schaff. W. J. Schaff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ultrabright and Ultrafast III–V Semiconductor Photocathodes 2014 ·Physical Review Letters ·Siddharth Karkare, (unknown), L. Cultrera, Bruce Dunham, Xianghong Liu, W. J. Schaff, Ivan Bazarov	66
2	Defect redistribution in postirradiation rapid-thermal-annealed InN 2010 ·Physical Review B ·(unknown), (unknown), Filip Tuomisto, (unknown), K. M. Yu, Władek Walukiewicz, W. J. Schaff	12
3	Photodetectors based on intersubband transitions using III-nitride superlattice structures 2009 ·Journal of Physics Condensed Matter ·Daniel Hofstetter, Esther Baumann, Fabrizio R. Giorgetta, (unknown), Hong Wu, W. J. Schaff, Jahan M. Dawlaty, Paul A. George, L.F. Eastman, Farhan Rana, P. Kandaswamy, (unknown), E. Monroy	23
4	InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates 2008 ·MRS Proceedings ·L. A. Reichertz, K. M. Yu, Yi Cui, (unknown), Jeffrey W. Beeman, Z. Liliental‐Weber, Joel W. Ager, W. Walukiewicz, W. J. Schaff, Todd L. Williamson, Mark A. Hoffbauer	10
5	Compensating point defects inHe+4-irradiated InN 2007 ·Physical Review B ·Filip Tuomisto, (unknown), K. M. Yu, W. Walukiewicz, W. J. Schaff	36
6	Optical bleaching effect in InN epitaxial layers 2006 ·Applied Physics Letters ·V. Pačebutas, (unknown), A. Krotkus, Joel W. Ager, W. Walukiewicz, H. J. Lü, W. J. Schaff	21
7	Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures 2005 ·Physical Review Letters ·(unknown), K. Reimann, M. Woerner, Thomas Elsaesser, Daniel Hofstetter, (unknown), W. J. Schaff, L.F. Eastman	48
8	Clean wurtzite InN surfaces prepared with atomic hydrogen 2005 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Louis F. J. Piper, T. D. Veal, Marc Walker, Imran Mahboob, C. F. McConville, H. J. Lü, W. J. Schaff	48
9	The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN 2004 ·Semiconductor Science and Technology ·(unknown), Sibel Gökden, N. Balkan, B. K. Ridley, W. J. Schaff	147
10	n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy 2004 ·Journal of Crystal Growth ·P.R. Hageman, W. J. Schaff, (unknown), Z. Liliental‐Weber	51
11	Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors 2003 ·Solid-State Electronics ·Jeonghyun Hwang, W. J. Schaff, (unknown), Ho‐Young Cha, L.F. Eastman	32
12	Internal Transitions of Negatively Charged Magnetoexcitons and Many Body Effects in a Two-Dimensional Electron Gas 2002 ·Physical Review Letters ·H. Nickel, (unknown), A. B. Dzyubenko, B. D. McCombe, A. Petrou, Andrey Sivachenko, W. J. Schaff, V. Umansky	21
13	Power limits of polarization-induced AlGaN/GaN HEMT's 2002 ·L.F. Eastman, (unknown), J. Smart, V. Tilak, Eduardo M. Chumbes, Hyungtak Kim, T. Prunty, Nils Weimann, R. Dimitrov, O. Ambacher, W. J. Schaff, J. R. Shealy	1
14	Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures 2001 ·Journal of Electronic Materials ·S. Bradley, A. P. Young, L. J. Brillson, Michael J. Murphy, W. J. Schaff	14
15	Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices 1999 ·physica status solidi (b) ·O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, Michael J. Murphy, J. Smart, J. R. Shealy, Nils Weimann, K. Chu, (unknown), (unknown), (unknown), W. J. Schaff, L.F. Eastman	113
16	Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency 1996 ·Electronics Letters ·M. Asif Khan, Q. Chen, M. S. Shur, (unknown), J.A. Higgins, Jinwook Burm, W. J. Schaff, L.F. Eastman	99
17	Sample preparation technique for cross‐sectional transmission electron microscopy of quantum wire structures 1993 ·Microscopy Research and Technique ·(unknown), Jason D. Reed, (unknown), W. J. Schaff, L.F. Eastman	1
18	Far-infrared magneto-optical studies of D− ions and many-electron effects on donor impurities in quasi-2D semiconductor structures 1993 ·Physica B Condensed Matter ·J.-P. Cheng, S. N. Holmes, (unknown), B. D. McCombe, W. J. Schaff	3
19	Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors 1987 ·Journal of Crystal Growth ·P.M. Enquist, (unknown), (unknown), W. J. Schaff, K. L. Kavanagh, G. W. Wicks, L.F. Eastman	10
20	Characterization of Grain Boundaries in Polycrystalline GaAs 1981 ·MRS Proceedings ·Michael G. Spencer, W. J. Schaff, David K. Wagner	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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