S. J. Rosner
Impact in
- Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
-
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
Papers in
-
- Semiconductor Quantum Structures and Devices 22
- Semiconductor materials and interfaces 16
-
- GaN-based semiconductor devices and materials 10
- Co-authors
- Elizabeth C. CarrG. GirolamiM. J. LudowiseT. I. KaminsR. Stanley WilliamsSteven P. DenBaarsJames S. SpeckS. Keller
- Journals
- Applied Physics Letters (12 papers)Journal of Crystal Growth (4 papers)Journal of Applied Physics (3 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Electron Device Letters (1 paper)
- Partner nations
- United StatesGermanyAustria
In The Last Decade
S. J. Rosner
52 papers receiving 2.1k citations
Hit Papers
Peers
Comparison fields: 5 of 57
- Condensed Matter Physics 1.1k
- Atomic and Molecular Physics, and Optics 1.2k
- Electronic, Optical and Magnetic Materials 461
- Electrical and Electronic Engineering 1.2k
- Materials Chemistry 658
Countries citing papers authored by S. J. Rosner
This map shows the geographic impact of S. J. Rosner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. J. Rosner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. J. Rosner more than expected).
Fields of papers citing papers by S. J. Rosner
This network shows the impact of papers produced by S. J. Rosner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. J. Rosner. The network helps show where S. J. Rosner may publish in the future.
Co-authors
The 25 scholars most cited alongside S. J. Rosner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2010 | 116 | |
| 2 | 2003 | 25 | |
| 3 | 2003 | 15 | |
| 4 | 2003 | 1 | |
| 5 | 2003 | 1 | |
| 6 | 2002 | 1 | |
| 7 | 1999 | 110 | |
| 8 | 1998 | 36 | |
| 9 | Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition Hit paper breakdown → | 1997 | 476 |
| 10 | 1993 | 2 | |
| 11 | 1990 | 32 | |
| 12 | 1990 | 64 | |
| 13 | 1989 | 2 | |
| 14 | 1988 | 37 | |
| 15 | 1988 | 11 | |
| 16 | 1988 | 1 | |
| 17 | 1986 | 5 | |
| 18 | 1986 | 7 | |
| 19 | 1986 | 27 | |
| 20 | 1962 | 5 |
About S. J. Rosner
S. J. Rosner is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Structural Biology, Electrical and Electronic Engineering and Surfaces, Coatings and Films, having authored 54 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (22 papers), Semiconductor materials and devices (21 papers), Semiconductor materials and interfaces (16 papers), Photonic and Optical Devices (13 papers), GaN-based semiconductor devices and materials (10 papers), Semiconductor Lasers and Optical Devices (9 papers), Molecular Junctions and Nanostructures (5 papers) and Nanowire Synthesis and Applications (5 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Atomic and Molecular Physics, and Optics (1.2k citations), Electronic, Optical and Magnetic Materials (461 citations), Electrical and Electronic Engineering (1.2k citations) and Materials Chemistry (658 citations). S. J. Rosner has collaborated with scholars based in United States, Germany and Austria. Frequent co-authors include Elizabeth C. Carr, G. Girolami, M. J. Ludowise, T. I. Kamins, R. Stanley Williams, Steven P. DenBaars, James S. Speck, S. Keller, C. R. Elsass and J. S. Harris. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.