L.F. Eastman

24.7k total citations · 6 hit papers
524 papers, 19.7k citations indexed

About

L.F. Eastman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, L.F. Eastman has authored 524 papers receiving a total of 19.7k indexed citations (citations by other indexed papers that have themselves been cited), including 422 papers in Electrical and Electronic Engineering, 353 papers in Atomic and Molecular Physics, and Optics and 228 papers in Condensed Matter Physics. Recurrent topics in L.F. Eastman's work include Semiconductor Quantum Structures and Devices (310 papers), GaN-based semiconductor devices and materials (225 papers) and Semiconductor materials and devices (220 papers). L.F. Eastman is often cited by papers focused on Semiconductor Quantum Structures and Devices (310 papers), GaN-based semiconductor devices and materials (225 papers) and Semiconductor materials and devices (220 papers). L.F. Eastman collaborates with scholars based in United States, Germany and United Kingdom. L.F. Eastman's co-authors include W. J. Schaff, J. R. Shealy, M. S. Shur, J. Smart, Nils Weimann, B. E. Foutz, O. Ambacher, M. Stutzmann, K. Chu and Michael J. Murphy and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

L.F. Eastman

502 papers receiving 18.7k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

1999 2.3k citations O. Ambacher, J. Smart et al. profile →
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2000 1.3k citations O. Ambacher, B. E. Foutz et al. profile →
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

2002 821 citations O. Ambacher, M. Stutzmann et al. Journal of Physics Condensed Matter profile →
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

2000 615 citations K. Chu, Eduardo M. Chumbes et al. IEEE Electron Device Letters profile →
Scattering of electrons at threading dislocations in GaN

1998 519 citations Nils Weimann, L.F. Eastman et al. profile →
Transient electron transport in wurtzite GaN, InN, and AlN

1999 457 citations B. E. Foutz, M. S. Shur et al. profile →

Peers

Countries citing papers authored by L.F. Eastman

Since Specialization

Citations

This map shows the geographic impact of L.F. Eastman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.F. Eastman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.F. Eastman more than expected).

Fields of papers citing papers by L.F. Eastman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.F. Eastman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.F. Eastman. The network helps show where L.F. Eastman may publish in the future.

Co-authorship network of co-authors of L.F. Eastman

This figure shows the co-authorship network connecting the top 25 collaborators of L.F. Eastman. A scholar is included among the top collaborators of L.F. Eastman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.F. Eastman. L.F. Eastman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	GaN-on-diamond field-effect transistors: from wafers to amplifier modules 2010 ·D.I. Babic, Quentin Diduck, (unknown), Anja Schreiber, Daniel Francis, Firooz Faili, Felix Ejeckam, (unknown), L.F. Eastman	14
2	Photodetectors based on intersubband transitions using III-nitride superlattice structures 2009 ·Journal of Physics Condensed Matter ·Daniel Hofstetter, Esther Baumann, Fabrizio R. Giorgetta, (unknown), Hong Wu, W. J. Schaff, Jahan M. Dawlaty, Paul A. George, L.F. Eastman, Farhan Rana, P. Kandaswamy, (unknown), E. Monroy	23
3	Frequency performance enhancement of AlGaN/GaN HEMTs on diamond 2009 ·Electronics Letters ·Quentin Diduck, (unknown), L.F. Eastman, Daniel Francis, J. Wasserbauer, Firooz Faili, (unknown), Felix Ejeckam	28
4	Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures 2005 ·Physical Review Letters ·(unknown), K. Reimann, M. Woerner, Thomas Elsaesser, Daniel Hofstetter, (unknown), W. J. Schaff, L.F. Eastman	48
5	Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs 2005 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. Matulionis, J. Liberis, M. Ramonas, I. Matulionienė, L.F. Eastman, A. Vertiatchikh, X. Chen, Yujie Sun	14
6	The influence of transistor nonlinearities on intrinsic noise 2004 ·Sungjae Lee, Kevin J. Webb, L.F. Eastman	1
7	Electrical bias stress related degradation of AlGaN/GaN HEMTs 2003 ·Electronics Letters ·Goutam Koley, Hyungtak Kim, L.F. Eastman, Michael G. Spencer	8
8	Electron drift velocity in AlGaN/GaN channel at high electric fields 2003 ·Applied Physics Letters ·(unknown), A. Matulionis, J. Liberis, (unknown), M. Ramonas, L.F. Eastman, J. R. Shealy, A. Vertiatchikh	87
9	Power limits of polarization-induced AlGaN/GaN HEMT's 2002 ·L.F. Eastman, (unknown), J. Smart, V. Tilak, Eduardo M. Chumbes, Hyungtak Kim, T. Prunty, Nils Weimann, R. Dimitrov, O. Ambacher, W. J. Schaff, J. R. Shealy	1
10	Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices 1999 ·physica status solidi (b) ·O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, Michael J. Murphy, J. Smart, J. R. Shealy, Nils Weimann, K. Chu, (unknown), (unknown), (unknown), W. J. Schaff, L.F. Eastman	113
11	Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications 1997 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), L.F. Eastman, R. W. Yanka, J. M. Ballingall, J. Braunstein, (unknown), B. K. Ridley	13
12	Comparison of high field electron transport in GaN and GaAs 1997 ·Applied Physics Letters ·B. E. Foutz, L.F. Eastman, Udayan V. Bhapkar, M. S. Shur	138
13	Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency 1996 ·Electronics Letters ·M. Asif Khan, Q. Chen, M. S. Shur, (unknown), J.A. Higgins, Jinwook Burm, W. J. Schaff, L.F. Eastman	99
14	Sample preparation technique for cross‐sectional transmission electron microscopy of quantum wire structures 1993 ·Microscopy Research and Technique ·(unknown), Jason D. Reed, (unknown), W. J. Schaff, L.F. Eastman	1
15	Advances in materials, processing and devices in III-V compound semiconductors 1989 ·D. K. Sadana, L.F. Eastman, Russell D. Dupuis	37
16	Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band 1988 ·IEEE Electron Device Letters ·(unknown), D.C. Radulescu, (unknown), (unknown), L.F. Eastman	25
17	Microwave characterization of very high transconductance MODFET 1984 ·(unknown), P.J. Tasker, (unknown), D. van der Merwe, L.F. Eastman	20
18	Noise in near-ballistic n+nn+ and n+pn+ gallium arsenide submicron diodes 1983 ·Solid-State Electronics ·(unknown), G. Bosman, C. M. Van Vliet, L.F. Eastman, (unknown)	17
19	Dependence of the electrical characteristics of heavily Ge-doped GaAs on molecular beam epitaxy growth parameters 1980 ·Applied Physics Letters ·G. Metze, R. A. Stall, C. E. C. Wood, L.F. Eastman	15
20	Advanced solid state microwave techniques 1975 ·STIN ·(unknown), L.F. Eastman, (unknown), (unknown)	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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