Weiyi Li

909 total citations
38 papers, 751 citations indexed

About

Weiyi Li is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Weiyi Li has authored 38 papers receiving a total of 751 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Condensed Matter Physics, 18 papers in Materials Chemistry and 16 papers in Electrical and Electronic Engineering. Recurrent topics in Weiyi Li's work include GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (12 papers) and ZnO doping and properties (9 papers). Weiyi Li is often cited by papers focused on GaN-based semiconductor devices and materials (22 papers), Ga2O3 and related materials (12 papers) and ZnO doping and properties (9 papers). Weiyi Li collaborates with scholars based in China, United States and Italy. Weiyi Li's co-authors include Kai Fu, Yong Cai, Guohao Yu, Baoshun Zhang, Umesh K. Mishra, S. Keller, Nirupam Hatui, Shichuang Sun, Zhili Zhang and Yaming Fan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Hazardous Materials.

In The Last Decade

Weiyi Li

33 papers receiving 718 citations

Peers

Weiyi Li
Yang Mei China
Helga Szambolics France
Afef Kedous‐Lebouc France
Keisuke Masuda Japan
S.Y. Yin China
Z. Z. Sun Hong Kong
Yuji Fujiwara Japan
Guoen Weng China
Nobuyuki Nagai Japan
Ruhui Xu China
Yang Mei China
Weiyi Li
Citations per year, relative to Weiyi Li Weiyi Li (= 1×) peers Yang Mei

Countries citing papers authored by Weiyi Li

Since Specialization
Citations

This map shows the geographic impact of Weiyi Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Weiyi Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Weiyi Li more than expected).

Fields of papers citing papers by Weiyi Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Weiyi Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Weiyi Li. The network helps show where Weiyi Li may publish in the future.

Co-authorship network of co-authors of Weiyi Li

This figure shows the co-authorship network connecting the top 25 collaborators of Weiyi Li. A scholar is included among the top collaborators of Weiyi Li based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Weiyi Li. Weiyi Li is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Khan, Kamruzzaman, Tanmay Chavan, Weiyi Li, et al.. (2025). Recent Advancements in N-polar GaN HEMT Technology. Crystals. 15(9). 830–830.
4.
Li, Weiyi, et al.. (2025). High-sensitivity room-temperature NH3 detection of SnO2/SnS2 nanocomposites by modulating annealing temperature. Vacuum. 239. 114401–114401. 1 indexed citations
5.
Li, Weiyi, Wenjian Liu, Tanmay Chavan, et al.. (2024). Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 34(2). 183–186. 10 indexed citations
6.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2024). Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz. IEEE Microwave and Wireless Technology Letters. 34(4). 395–398. 9 indexed citations
7.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2023). First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 33(6). 683–686. 20 indexed citations
8.
Li, Weiyi, Brian Romanczyk, Matthew Guidry, et al.. (2023). Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs. IEEE Transactions on Electron Devices. 70(4). 2075–2080. 41 indexed citations
9.
Liu, Wenjian, Brian Romanczyk, Weiyi Li, et al.. (2023). Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. 1–2. 8 indexed citations
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Wang, Honglan, et al.. (2022). The impact of different glossing conditions on the learning of EFL single words and collocations in reading. IRAL - International Review of Applied Linguistics in Language Teaching. 62(2). 723–745. 2 indexed citations
12.
Liu, Wenjian, Shubhra S. Pasayat, Aidan A. Taylor, et al.. (2021). Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films. Applied Physics Letters. 119(4). 2 indexed citations
13.
Liu, Wenjian, Brian Romanczyk, Matthew Guidry, et al.. (2021). 6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates. IEEE Microwave and Wireless Components Letters. 31(6). 748–751. 43 indexed citations
14.
Li, Weiyi, Shubhra S. Pasayat, Matthew Guidry, et al.. (2020). First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel. Semiconductor Science and Technology. 35(7). 75007–75007. 11 indexed citations
15.
Hao, Ronghui, Weiyi Li, Kai Fu, et al.. (2017). Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs. IEEE Electron Device Letters. 38(11). 1567–1570. 102 indexed citations
16.
Zhang, Zhili, Liang Song, Weiyi Li, et al.. (2017). Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate. Solid-State Electronics. 134. 39–45. 4 indexed citations
17.
Zhang, Zhili, Weiyi Li, Kai Fu, et al.. (2016). AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator. IEEE Electron Device Letters. 38(2). 236–239. 51 indexed citations
18.
Li, Can, Bowen Fan, Weiyi Li, et al.. (2015). Bandgap engineering of monolayer MoS2 under strain: A DFT study. Journal of the Korean Physical Society. 66(11). 1789–1793. 26 indexed citations
19.
Coldren, L.A., Weiyi Li, Antonio Mecozzi, et al.. (2015). Single-chip dual-pumped SOA-based phase-sensitive amplifier at 1550nm. 88–89. 4 indexed citations
20.
Sun, Jie, Yebin Xi, Zhongde Zhang, et al.. (2009). Leydig cell transplantation restores androgen production in surgically castrated prepubertal rats. Asian Journal of Andrology. 11(4). 405–409. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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