Feng Wu

9.6k total citations · 2 hit papers
197 papers, 8.0k citations indexed

About

Feng Wu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Feng Wu has authored 197 papers receiving a total of 8.0k indexed citations (citations by other indexed papers that have themselves been cited), including 168 papers in Condensed Matter Physics, 71 papers in Electrical and Electronic Engineering and 71 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Feng Wu's work include GaN-based semiconductor devices and materials (168 papers), Ga2O3 and related materials (69 papers) and Metal and Thin Film Mechanics (67 papers). Feng Wu is often cited by papers focused on GaN-based semiconductor devices and materials (168 papers), Ga2O3 and related materials (69 papers) and Metal and Thin Film Mechanics (67 papers). Feng Wu collaborates with scholars based in United States, Japan and China. Feng Wu's co-authors include James S. Speck, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra, Michael D. Craven, Erin C. Young, B. A. Haskell, S. Keller, Sung‐Hwan Lim and Troy J. Baker and has published in prestigious journals such as Advanced Materials, Nature Materials and SHILAP Revista de lepidopterología.

In The Last Decade

Feng Wu

190 papers receiving 7.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A GaN bulk crystal with improved structural quality grown by the ammonothermal method

2007 223 citations Feng Wu, James S. Speck et al. profile →
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

2005 197 citations Feng Wu, Steven P. DenBaars et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Feng Wu United States	52	6.9k	3.8k	3.7k	2.4k	2.4k	197	8.0k
A. Krost Germany	50	5.2k 0.8×	4.6k 1.2×	3.0k 0.8×	4.5k 1.9×	2.9k 1.2×	323	9.4k
J. Bläsing Germany	39	3.5k 0.5×	3.5k 0.9×	2.2k 0.6×	2.8k 1.2×	1.2k 0.5×	190	6.2k
F. Calle Spain	38	4.0k 0.6×	2.9k 0.8×	3.1k 0.8×	3.0k 1.3×	1.4k 0.6×	202	6.8k
A. Dadgar Germany	46	5.2k 0.8×	2.9k 0.8×	2.9k 0.8×	3.2k 1.3×	1.5k 0.6×	231	7.0k
Menno J. Kappers United Kingdom	46	5.5k 0.8×	2.8k 0.8×	2.2k 0.6×	2.5k 1.0×	2.6k 1.1×	311	7.0k
Ramón Collazo United States	43	5.1k 0.7×	2.5k 0.7×	3.0k 0.8×	2.7k 1.1×	1.1k 0.5×	272	6.5k
Toshiki Makimōto Japan	38	4.0k 0.6×	2.7k 0.7×	1.9k 0.5×	3.0k 1.2×	1.8k 0.8×	185	6.2k
Shigefusa F. Chichibu Japan	56	9.0k 1.3×	8.5k 2.2×	5.9k 1.6×	6.1k 2.6×	4.8k 2.0×	414	14.8k
Kazumasa Hiramatsu Japan	38	6.9k 1.0×	3.5k 0.9×	3.3k 0.9×	2.3k 1.0×	2.2k 0.9×	200	7.7k
V. Yu. Davydov Russia	32	4.0k 0.6×	3.2k 0.8×	2.3k 0.6×	1.7k 0.7×	1.7k 0.7×	263	5.8k

Countries citing papers authored by Feng Wu

Since Specialization

Citations

This map shows the geographic impact of Feng Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Feng Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Feng Wu more than expected).

Fields of papers citing papers by Feng Wu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Feng Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Feng Wu. The network helps show where Feng Wu may publish in the future.

Co-authorship network of co-authors of Feng Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Feng Wu. A scholar is included among the top collaborators of Feng Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Feng Wu. Feng Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Chen, Yiwang, Ji Qian, Ke Wang, et al.. (2025). Cutting‐Edge Developments at the Interface of Inorganic Solid‐State Electrolytes. Advanced Materials. 37(39). e2502653–e2502653. 5 indexed citations

Chen, Nuo, Jingning Lai, Fengling Zhang, et al.. (2025). Nicotinamide Solid Cosolvent Enhanced Two-Electron Zinc Peroxide Chemistry for Stable Neutral Zinc-Air Batteries. Nano Letters. 25(27). 10770–10777. 2 indexed citations

Wu, Feng, Ran Zhao, Haojie Zhu, et al.. (2025). Electrolyte Regulation toward Cathodes with Enhanced‐Performance in Aqueous Zinc Ion Batteries. Advanced Materials. 37(15). e2501538–e2501538. 20 indexed citations

Long, Bo, Feng Wu, & Chuan Wu. (2025). Multi-Ion Synergy and Multi-Electron Reactions for Rechargeable Aluminum Batteries. SHILAP Revista de lepidopterología. 6.

Han, Xiaomin, Ran Zhao, Lihua Wang, et al.. (2025). Dynamic Protective Multi‐Layers for MnO ₂ Cathodes: Ion Sorting and Structural Protection for Superior Zinc‐Ion Battery Cycling Performance. Advanced Materials. 38(1). e13548–e13548. 2 indexed citations

Liu, Yuhao, et al.. (2025). Spatial Expansion of Catalytic Domains via Light-Driven Solid–Liquid Synergy for Advanced Li–S Batteries. ACS Nano. 19(37). 33544–33556.

Gong, Wenting, et al.. (2025). Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer. Optics Express. 33(9). 19391–19391. 1 indexed citations

Wu, Feng, et al.. (2024). Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects. Applied Physics Letters. 125(3). 4 indexed citations

Li, Yongjian, Xinyu Zhu, Xinyu Wang, et al.. (2024). Aluminium doping in single-crystal nickel-rich cathodes: insights into electrochemical degradation and enhancement. Journal of Materials Chemistry A. 12(32). 20910–20920. 8 indexed citations

10.

Guo, Yafei, Chong Luo, Mingfang Yang, et al.. (2024). Dynamic Covalent Bonds Regulate Zinc Plating/Stripping Behaviors for High‐Performance Zinc Ion Batteries. Angewandte Chemie. 136(31). 2 indexed citations

11.

Wu, Feng, Andreas K. Schmid, Jacques Peretti, et al.. (2023). Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy. Physical Review Applied. 20(6). 7 indexed citations

12.

Wu, Feng, et al.. (2023). Atomic layer etching (ALE) of III-nitrides. Applied Physics Letters. 123(6). 11 indexed citations

13.

Wong, Matthew S., Feng Wu, Stephen Gee, et al.. (2023). Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges. AIP Advances. 13(1). 3 indexed citations

14.

Wu, Feng, Shuji Nakamura, Steven P. DenBaars, et al.. (2023). Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes. Applied Physics Letters. 123(9). 13 indexed citations

15.

Marcinkevičius, S., et al.. (2023). Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs. Applied Physics Letters. 123(20). 9 indexed citations

16.

Mukhopadhyay, Partha, Ymir Kalmann Frodason, Joel B. Varley, et al.. (2022). Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE. Applied Physics Letters. 121(11). 21 indexed citations

17.

Zollner, Christian J., Yifan Yao, Feng Wu, et al.. (2021). Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio. Crystals. 11(8). 1006–1006. 21 indexed citations

18.

Wu, Feng, et al.. (2020). MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates. Semiconductor Science and Technology. 36(1). 15011–15011. 9 indexed citations

19.

Araki, Masahiro, Hongjian Li, Feng Wu, et al.. (2019). Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. Optics Express. 27(17). 24717–24717. 10 indexed citations

20.

Liu, Xia-Ji, Christine M. Jackson, Feng Wu, et al.. (2016). Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition. Journal of Applied Physics. 119(1). 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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