Nirupam Hatui

1.2k total citations
56 papers, 980 citations indexed

About

Nirupam Hatui is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Nirupam Hatui has authored 56 papers receiving a total of 980 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Condensed Matter Physics, 29 papers in Electrical and Electronic Engineering and 23 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Nirupam Hatui's work include GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (23 papers) and ZnO doping and properties (17 papers). Nirupam Hatui is often cited by papers focused on GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (23 papers) and ZnO doping and properties (17 papers). Nirupam Hatui collaborates with scholars based in United States, India and Germany. Nirupam Hatui's co-authors include S. Keller, Umesh K. Mishra, Arnab Bhattacharya, Athith Krishna, Brian Romanczyk, Matthew Guidry, Christian Wurm, A. Azizur Rahman, Weiyi Li and M. R. Gokhale and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Nirupam Hatui

55 papers receiving 962 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nirupam Hatui United States 18 851 483 451 362 214 56 980
Hirokuni Tokuda Japan 17 931 1.1× 750 1.6× 553 1.2× 255 0.7× 187 0.9× 71 1.1k
Tomoyuki Tanikawa Japan 17 699 0.8× 290 0.6× 376 0.8× 356 1.0× 262 1.2× 80 840
Cory Lund United States 15 619 0.7× 398 0.8× 276 0.6× 195 0.5× 181 0.8× 31 698
K. Hazu Japan 15 550 0.6× 258 0.5× 376 0.8× 318 0.9× 167 0.8× 48 724
Minhan Mi China 19 936 1.1× 745 1.5× 430 1.0× 181 0.5× 225 1.1× 91 991
Brian L. Swenson United States 14 885 1.0× 719 1.5× 483 1.1× 220 0.6× 193 0.9× 24 998
Benjamin Neuschl Germany 16 612 0.7× 290 0.6× 355 0.8× 308 0.9× 169 0.8× 37 752
Meng Qi United States 11 824 1.0× 769 1.6× 488 1.1× 251 0.7× 182 0.9× 33 1.1k
Jeomoh Kim United States 14 519 0.6× 216 0.4× 266 0.6× 245 0.7× 257 1.2× 27 690

Countries citing papers authored by Nirupam Hatui

Since Specialization
Citations

This map shows the geographic impact of Nirupam Hatui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nirupam Hatui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nirupam Hatui more than expected).

Fields of papers citing papers by Nirupam Hatui

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nirupam Hatui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nirupam Hatui. The network helps show where Nirupam Hatui may publish in the future.

Co-authorship network of co-authors of Nirupam Hatui

This figure shows the co-authorship network connecting the top 25 collaborators of Nirupam Hatui. A scholar is included among the top collaborators of Nirupam Hatui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nirupam Hatui. Nirupam Hatui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Romanczyk, Brian, et al.. (2024). Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N. Crystals. 14(6). 485–485. 1 indexed citations
2.
Li, Weiyi, Wenjian Liu, Tanmay Chavan, et al.. (2024). Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 34(2). 183–186. 10 indexed citations
3.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2024). Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz. IEEE Microwave and Wireless Technology Letters. 34(4). 395–398. 9 indexed citations
4.
Hatui, Nirupam, et al.. (2024). N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz. IEEE Microwave and Wireless Technology Letters. 34(7). 907–910. 10 indexed citations
5.
Li, Weiyi, Matthew Guidry, Brian Romanczyk, et al.. (2023). First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz. IEEE Microwave and Wireless Technology Letters. 33(6). 683–686. 20 indexed citations
6.
Li, Weiyi, Brian Romanczyk, Matthew Guidry, et al.. (2023). Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs. IEEE Transactions on Electron Devices. 70(4). 2075–2080. 41 indexed citations
7.
Liu, Wenjian, Brian Romanczyk, Weiyi Li, et al.. (2023). Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. 1–2. 8 indexed citations
8.
Krishna, Athith, Brian Romanczyk, Nirupam Hatui, et al.. (2022). GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate. IEEE Electron Device Letters. 44(1). 9–12. 11 indexed citations
9.
Rahman, A. Azizur, et al.. (2021). Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire. Journal of Electronic Materials. 50(8). 4533–4539. 1 indexed citations
10.
Liu, Wenjian, Brian Romanczyk, Matthew Guidry, et al.. (2021). 6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates. IEEE Microwave and Wireless Components Letters. 31(6). 748–751. 43 indexed citations
11.
Hatui, Nirupam, Athith Krishna, Shubhra S. Pasayat, S. Keller, & Umesh K. Mishra. (2021). Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films. Electronics. 10(10). 1182–1182. 3 indexed citations
12.
Guidry, Matthew, Brian Romanczyk, Nirupam Hatui, et al.. (2020). A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1–2. 7 indexed citations
13.
Liu, Wenjian, Brian Romanczyk, Nirupam Hatui, et al.. (2020). Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current. IEEE Electron Device Letters. 41(10). 1468–1471. 8 indexed citations
14.
Li, Weiyi, Shubhra S. Pasayat, Matthew Guidry, et al.. (2020). First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel. Semiconductor Science and Technology. 35(7). 75007–75007. 11 indexed citations
15.
Hatui, Nirupam, Athith Krishna, He‐Ping Li, et al.. (2020). Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition. Semiconductor Science and Technology. 35(9). 95002–95002. 17 indexed citations
16.
Gupta, Chirag, Silvia H. Chan, Anchal Agarwal, et al.. (2017). First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET. IEEE Electron Device Letters. 38(11). 1575–1578. 45 indexed citations
17.
Rahman, A. Azizur, et al.. (2016). Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates. Journal of Crystal Growth. 439. 47–53. 10 indexed citations
18.
Hatui, Nirupam, et al.. (2016). The Mechanism of Ni-Assisted GaN Nanowire Growth. Nano Letters. 16(12). 7632–7638. 41 indexed citations
19.
Rahman, A. Azizur, et al.. (2015). Comparison of GaN nanowires grown on various sapphire substrates. arXiv (Cornell University). 1 indexed citations
20.
Frentrup, Martin, Nirupam Hatui, Tim Wernicke, et al.. (2013). Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction. Journal of Applied Physics. 114(21). 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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