Nirupam Hatui

1.2k citations

56 papers · 980 indexed · h-index 18

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 56
- GaN-based semiconductor devices and materials 56
Electronic, Optical and Magnetic Materials 23
- Ga2O3 and related materials 23

Co-authors: S. Keller (38 shared papers)Umesh K. Mishra (37 shared papers)Arnab Bhattacharya (15 shared papers)Athith Krishna (14 shared papers)Brian Romanczyk (19 shared papers)Matthew Guidry (20 shared papers)Christian Wurm (18 shared papers)A. Azizur Rahman (13 shared papers)
Journals: IEEE Electron Device Letters (8 papers)Applied Physics Letters (8 papers)Journal of Crystal Growth (7 papers)Journal of Applied Physics (3 papers)Applied Physics Express (2 papers)
Partner nations: United States India Germany

In The Last Decade

Nirupam Hatui

55 papers receiving 962 citations

Peers

Countries citing papers authored by Nirupam Hatui

Since Specialization

Citations

This map shows the geographic impact of Nirupam Hatui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nirupam Hatui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nirupam Hatui more than expected).

Fields of papers citing papers by Nirupam Hatui

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nirupam Hatui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nirupam Hatui. The network helps show where Nirupam Hatui may publish in the future.

Co-authors

The 25 scholars most cited alongside Nirupam Hatui, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Nirupam Hatui Line = papers co-authored together Nirupam Hatui links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 56 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs IEEE Electron Device Letters ·Brian Romanczyk, Xun Zheng, Matthew Guidry, Haoran Li, Nirupam Hatui, Christian Wurm, Athith Krishna, Elaheh Ahmadi, S. Keller, Umesh K. Mishra	2020	91
2	MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Journal of Crystal Growth ·Priti Gupta, A. Azizur Rahman, Nirupam Hatui, M. R. Gokhale, Mandar M. Deshmukh, Arnab Bhattacharya	2013	72
3	High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz IEEE Electron Device Letters ·Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Rohit R. Karnaty, S. Keller, James F. Buckwalter, Umesh K. Mishra	2020	64
4	First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET IEEE Electron Device Letters ·Chirag Gupta, Silvia H. Chan, Anchal Agarwal, Nirupam Hatui, S. Keller, Umesh K. Mishra	2017	45
5	6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates IEEE Microwave and Wireless Components Letters ·Wenjian Liu, Brian Romanczyk, Matthew Guidry, Nirupam Hatui, Christian Wurm, Weiyi Li, Pawana Shrestha, Xun Zheng, S. Keller, Umesh K. Mishra	2021	43
6	Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs IEEE Transactions on Electron Devices ·Weiyi Li, Brian Romanczyk, Matthew Guidry, Emre Akso, Nirupam Hatui, Christian Wurm, Wenjian Liu, Pawana Shrestha, Henry Collins, Christopher Clymore, S. Keller, Umesh K. Mishra	2023	41
7	The Mechanism of Ni-Assisted GaN Nanowire Growth Nano Letters ·Carina B. Maliakkal, Nirupam Hatui, Rudheer Bapat, Bhagyashree A. Chalke, A. Azizur Rahman, Arnab Bhattacharya	2016	41
8	Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current IEEE Electron Device Letters ·Aditya Raj, Athith Krishna, Nirupam Hatui, Chirag Gupta, Raina Jang, S. Keller, Umesh K. Mishra	2020	41
9	N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density IEEE Electron Device Letters ·Brian Romanczyk, Weiyi Li, Matthew Guidry, Nirupam Hatui, Athith Krishna, Christian Wurm, S. Keller, Umesh K. Mishra	2020	38
10	Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction Journal of Applied Physics ·Martin Frentrup, Nirupam Hatui, Tim Wernicke, Joachim Stellmach, Arnab Bhattacharya, Michael Kneissl	2013	35
11	Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors Applied Physics Letters ·Athith Krishna, Aditya Raj, Nirupam Hatui, S. Keller, Umesh K. Mishra	2019	27
12	AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment physica status solidi (a) ·Athith Krishna, Aditya Raj, Nirupam Hatui, Onur S. Koksaldi, Raina Jang, S. Keller, Umesh K. Mishra	2019	26
13	Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers Applied Physics Letters ·Priti Gupta, A. Azizur Rahman, Nirupam Hatui, Jayesh B. Parmar, Bhagyashree A. Chalke, Rudheer Bapat, S. C. Purandare, Mandar M. Deshmukh, Arnab Bhattacharya	2013	26
14	First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz IEEE Microwave and Wireless Technology Letters ·Emre Akso, Henry Collins, Christopher Clymore, Weiyi Li, Matthew Guidry, Brian Romanczyk, Christian Wurm, Wenjian Liu, Nirupam Hatui, Robert Hamwey, Pawana Shrestha, S. Keller, Umesh K. Mishra	2023	20
15	Anisotropic structural and optical properties of a-plane (112¯) AlInN nearly-lattice-matched to GaN Applied Physics Letters ·Masihhur R. Laskar, Tapas Ganguli, A. Azizur Rahman, Ashish Arora, Nirupam Hatui, M. R. Gokhale, Sandip Ghosh, Arnab Bhattacharya	2011	18
16	Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology ·Nirupam Hatui, Athith Krishna, He‐Ping Li, Chirag Gupta, Brian Romanczyk, Dillon Acker-James, Elaheh Ahmadi, S. Keller, U. K. Mishra	2020	17
17	MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55) Journal of Crystal Growth ·Nirupam Hatui, Martin Frentrup, A. Azizur Rahman, Abdul Kadir, S. Subramanian, Michael Kneissl, Arnab Bhattacharya	2014	17
18	High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers Journal of Crystal Growth ·Masihhur R. Laskar, Tapas Ganguli, Nirupam Hatui, A. Azizur Rahman, M. R. Gokhale, Arnab Bhattacharya	2010	17
19	Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN Applied Physics Letters ·Shubhra S. Pasayat, Nirupam Hatui, Weiyi Li, Chirag Gupta, Shuji Nakamura, Steven P. DenBaars, S. Keller, Umesh K. Mishra	2020	15
20	GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current 2021 IEEE International Electron Devices Meeting (IEDM) ·Aditya Raj, Athith Krishna, Nirupam Hatui, Brian Romanczyk, Christian Wurm, Matthew Guidry, Robert Hamwey, N. Pakala, S. Keller, Umesh K. Mishra	2021	15

About Nirupam Hatui

Nirupam Hatui is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 56 papers that have together received 980 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (56 papers), Ga2O3 and related materials (23 papers), ZnO doping and properties (17 papers), Radio Frequency Integrated Circuit Design (15 papers), Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (12 papers), Silicon Carbide Semiconductor Technologies (7 papers) and Metal and Thin Film Mechanics (6 papers). The work is most often cited by research in Condensed Matter Physics (851 citations), Electronic, Optical and Magnetic Materials (451 citations), Electrical and Electronic Engineering (483 citations), Materials Chemistry (362 citations) and Atomic and Molecular Physics, and Optics (214 citations). Nirupam Hatui has collaborated with scholars based in United States, India and Germany. Frequent co-authors include S. Keller, Umesh K. Mishra, Arnab Bhattacharya, Athith Krishna, Brian Romanczyk, Matthew Guidry, Christian Wurm, A. Azizur Rahman, Weiyi Li and M. R. Gokhale. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics and Applied Physics Express.

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