O. Ambacher

32.0k total citations · 8 hit papers
807 papers, 26.3k citations indexed

About

O. Ambacher is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, O. Ambacher has authored 807 papers receiving a total of 26.3k indexed citations (citations by other indexed papers that have themselves been cited), including 525 papers in Electrical and Electronic Engineering, 507 papers in Condensed Matter Physics and 201 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in O. Ambacher's work include GaN-based semiconductor devices and materials (505 papers), Radio Frequency Integrated Circuit Design (183 papers) and Ga2O3 and related materials (168 papers). O. Ambacher is often cited by papers focused on GaN-based semiconductor devices and materials (505 papers), Radio Frequency Integrated Circuit Design (183 papers) and Ga2O3 and related materials (168 papers). O. Ambacher collaborates with scholars based in Germany, United States and Spain. O. Ambacher's co-authors include M. Stutzmann, R. Dimitrov, V. Cimalla, L.F. Eastman, W. J. Schaff, J. Smart, J. R. Shealy, Michael J. Murphy, Nils Weimann and Fabio Bernardini and has published in prestigious journals such as Journal of the American Chemical Society, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

O. Ambacher

791 papers receiving 25.4k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

1999 2.3k citations O. Ambacher, M. Stutzmann et al. Journal of Applied Physics profile →
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2000 1.3k citations O. Ambacher, M. Stutzmann et al. Journal of Applied Physics profile →
Growth and applications of Group III-nitrides

1998 1.2k citations O. Ambacher profile →
Wireless sub-THz communication system with high data rate

2013 1.2k citations D. Lopez-Diaz, Arnulf Leuther et al. profile →
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

2002 821 citations O. Ambacher, Martin Hermann et al. profile →
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

2002 686 citations O. Ambacher et al. Applied Physics Letters profile →
Optical constants of epitaxial AlGaN films and their temperature dependence

1997 512 citations O. Ambacher, M. Stutzmann et al. Journal of Applied Physics profile →
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

1998 483 citations O. Ambacher, M. Stutzmann et al. profile →

Peers

Countries citing papers authored by O. Ambacher

Since Specialization

Citations

This map shows the geographic impact of O. Ambacher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Ambacher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Ambacher more than expected).

Fields of papers citing papers by O. Ambacher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Ambacher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Ambacher. The network helps show where O. Ambacher may publish in the future.

Co-authorship network of co-authors of O. Ambacher

This figure shows the co-authorship network connecting the top 25 collaborators of O. Ambacher. A scholar is included among the top collaborators of O. Ambacher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. Ambacher. O. Ambacher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications 2025 ·Frontiers in Materials ·(unknown), (unknown), O. Ambacher	2
2	Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy 2025 ·Applied Physics Letters ·(unknown), Mohit Raghuwanshi, (unknown), Yuan Yu, (unknown), Mario Prescher, Lutz Kirste, O. Ambacher	2
3	Electrical properties of SiNy/Al1−xScxN/GaN-based metal–insulator–semiconductor structures 2025 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), R. Driad, Lutz Kirste, (unknown), (unknown), Stefano Leone, O. Ambacher	0
4	Electrical and structural characterization of YAlN at high alloy concentrations 2024 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), (unknown), O. Ambacher	2
5	Power Module Design for GaN Transistors Enabling High Switching Speed in Multi‐Kilowatt Applications 2023 ·Energy Technology ·D. Wöhrle, Bruno Burger, O. Ambacher	2
6	Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal ScxAl1−xN crystals 2022 ·Journal of Applied Physics ·O. Ambacher, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown)	8
7	Publisher's Note: “Influence of structural properties on the ferroelectric behavior of hexagonal AlScN” [J. Appl. Phys. 132, 114101 (2022)] 2022 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), (unknown), Zhiyuan Fu, (unknown), Lutz Kirste, O. Ambacher	0
8	Rayleigh waves in nonpolar Al0.7Sc0.3N(112¯0) films with enhanced electromechanical coupling and quality factor 2022 ·Applied Physics Letters ·(unknown), (unknown), (unknown), Lutz Kirste, O. Ambacher	7
9	Leakage mechanism in Al _x Ga_1−xN/GaN heterostructures with AlN interlayer 2021 ·Semiconductor Science and Technology ·K. Köhler, W. Pletschen, Lutz Kirste, Stefano Leone, S. Müller, R. Aidam, W. Bronner, Peter Brückner, Patrick Waltereit, V. M. Polyakov, O. Ambacher	2
10	A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation 2021 ·IEEE Transactions on Microwave Theory and Techniques ·(unknown), Fabian Thome, Arnulf Leuther, O. Ambacher	22
11	Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs 2021 ·IEEE Transactions on Terahertz Science and Technology ·(unknown), Laurenz John, Dominik Meier, Markus Rösch, Sandrine Wagner, A. Tessmann, Arnulf Leuther, O. Ambacher, R. Quay	16
12	A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures 2021 ·IEEE Transactions on Microwave Theory and Techniques ·(unknown), Fabian Thome, Dirk Schwantuschke, Arnulf Leuther, O. Ambacher	11
13	Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology 2020 ·IEEE Microwave and Wireless Components Letters ·Fabian Thome, Arnulf Leuther, O. Ambacher	19
14	Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE 2019 ·Japanese Journal of Applied Physics ·(unknown), (unknown), (unknown), Lutz Kirste, Mario Prescher, R. Aidam, S. Müller, Patrick Waltereit, O. Ambacher, M. Fiederle	63
15	A Transmitter System-in-Package at 300 GHz With an Off-Chip Antenna and GaAs-Based MMICs 2019 ·IEEE Transactions on Terahertz Science and Technology ·Alexander Dyck, Markus Rösch, A. Tessmann, Arnulf Leuther, M. Kuri, Sandrine Wagner, (unknown), (unknown), O. Ambacher	34
16	Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology 2018 ·IEEE Transactions on Terahertz Science and Technology ·(unknown), Y. Campos‐Roca, F. van Raay, Christian Friesicke, Sandrine Wagner, H. Maßler, Arnulf Leuther, O. Ambacher	17
17	Spectroscopic Measurement of Material Properties Using an Improved Millimeter-Wave Ellipsometer Based on Metallic Substrates 2016 ·IEEE Transactions on Instrumentation and Measurement ·(unknown), (unknown), A. Hülsmann, Jutta Kühn, M. Schlechtweg, O. Ambacher	5
18	The metamorphic HEMT and its applications in remote sensing 2009 ·Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) ·Ingmar Kallfass, A. Tessmann, (unknown), M. Seelmann‐Eggebert, (unknown), (unknown), Niklas Wadefalk, F. Schäfer, K. Schüster, M. Schlechtweg, O. Ambacher	1
19	A 300 GHz active frequency-doubler and integrated resistive mixer MMIC 2009 ·Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) ·Ingmar Kallfass, A. Tessmann, H. Maßler, D. Lopez-Diaz, Arnulf Leuther, M. Schlechtweg, O. Ambacher	29
20	Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Martin Eickhoff, J. Schalwig, Gustav Steinhoff, (unknown), L. Görgens, R. Neuberger, Martin Hermann, Barbara Baur, Gerhard Müller, O. Ambacher, M. Stutzmann	111

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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