Anchal Agarwal

1.6k total citations
33 papers, 1.3k citations indexed

About

Anchal Agarwal is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Anchal Agarwal has authored 33 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Anchal Agarwal's work include GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (18 papers) and Ga2O3 and related materials (13 papers). Anchal Agarwal is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (18 papers) and Ga2O3 and related materials (13 papers). Anchal Agarwal collaborates with scholars based in United States, Japan and Switzerland. Anchal Agarwal's co-authors include S. Keller, Umesh K. Mishra, Chirag Gupta, Silvia H. Chan, Srabanti Chowdhury, Dong Ji, Angus Rockett, S. Strite, H. Morkoç̌ and Wenwen Li and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Anchal Agarwal

33 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Anchal Agarwal United States 18 1.2k 923 562 303 258 33 1.3k
Tsutomu Uesugi Japan 21 1.1k 0.9× 1.1k 1.2× 491 0.9× 223 0.7× 215 0.8× 59 1.3k
Z.-Q. Fang United States 21 678 0.6× 756 0.8× 424 0.8× 382 1.3× 372 1.4× 45 1.1k
L. McCarthy United States 19 1.3k 1.1× 1.0k 1.1× 590 1.0× 262 0.9× 358 1.4× 47 1.4k
G. Nataf France 15 810 0.7× 402 0.4× 445 0.8× 571 1.9× 363 1.4× 31 1.1k
Ziguang Ma China 13 506 0.4× 387 0.4× 275 0.5× 436 1.4× 266 1.0× 59 833
G. Kamler Poland 17 781 0.7× 350 0.4× 368 0.7× 418 1.4× 264 1.0× 59 902
Junxue Ran China 14 576 0.5× 367 0.4× 402 0.7× 358 1.2× 208 0.8× 47 828
Muneyoshi Suita Japan 16 702 0.6× 557 0.6× 390 0.7× 245 0.8× 210 0.8× 38 840
Joel T. Asubar Japan 18 934 0.8× 851 0.9× 608 1.1× 423 1.4× 240 0.9× 85 1.2k
I. K. Shmagin United States 11 795 0.7× 391 0.4× 389 0.7× 419 1.4× 360 1.4× 16 1.0k

Countries citing papers authored by Anchal Agarwal

Since Specialization
Citations

This map shows the geographic impact of Anchal Agarwal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Anchal Agarwal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Anchal Agarwal more than expected).

Fields of papers citing papers by Anchal Agarwal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Anchal Agarwal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Anchal Agarwal. The network helps show where Anchal Agarwal may publish in the future.

Co-authorship network of co-authors of Anchal Agarwal

This figure shows the co-authorship network connecting the top 25 collaborators of Anchal Agarwal. A scholar is included among the top collaborators of Anchal Agarwal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Anchal Agarwal. Anchal Agarwal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pasayat, Shubhra S., Elaheh Ahmadi, Brian Romanczyk, et al.. (2019). First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE. Semiconductor Science and Technology. 34(4). 45009–45009. 20 indexed citations
2.
Ruzzarin, Maria, Matteo Borga, Enrico Zanoni, et al.. (2019). Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). Padua Research Archive (University of Padova). 1–5. 3 indexed citations
3.
Gupta, Chirag, Cory Lund, Silvia H. Chan, et al.. (2018). Corrections to “<italic>In Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355]. IEEE Electron Device Letters. 39(2). 316–316. 5 indexed citations
4.
Lund, Cory, Anchal Agarwal, Brian Romanczyk, et al.. (2018). Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD. Semiconductor Science and Technology. 33(9). 95014–95014. 10 indexed citations
5.
Agarwal, Anchal. (2018). Materials Development for Gallium Nitride Power Devices. eScholarship (California Digital Library). 1 indexed citations
6.
Chun, Jaeyi, et al.. (2018). Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width. Advanced Electronic Materials. 5(1). 3 indexed citations
7.
Ji, Dong, Anchal Agarwal, Wenwen Li, S. Keller, & Srabanti Chowdhury. (2018). Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation. IEEE Transactions on Electron Devices. 65(2). 483–487. 35 indexed citations
8.
Ji, Dong, Chirag Gupta, Anchal Agarwal, et al.. (2018). Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET). IEEE Electron Device Letters. 39(5). 711–714. 61 indexed citations
9.
Agarwal, Anchal, Onur S. Koksaldi, Chirag Gupta, S. Keller, & Umesh K. Mishra. (2017). Maskless regrowth of GaN for trenched devices by MOCVD. Applied Physics Letters. 111(23). 5 indexed citations
10.
Agarwal, Anchal, Chirag Gupta, Abdullah I. Alhassan, et al.. (2017). Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition. Applied Physics Express. 10(11). 111002–111002. 5 indexed citations
11.
Gupta, Chirag, Silvia H. Chan, Anchal Agarwal, et al.. (2017). First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET. IEEE Electron Device Letters. 38(11). 1575–1578. 45 indexed citations
12.
Gupta, Chirag, Cory Lund, Silvia H. Chan, et al.. (2017). In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates. IEEE Electron Device Letters. 38(3). 353–355. 142 indexed citations
13.
Agarwal, Anchal, Elaheh Ahmadi, Dong Ji, et al.. (2017). Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer. IEEE Electron Device Letters. 38(7). 933–936. 41 indexed citations
14.
Ji, Dong, Chirag Gupta, Silvia H. Chan, et al.. (2017). Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices. 9.4.1–9.4.4. 67 indexed citations
15.
Gupta, Chirag, Silvia H. Chan, Yuuki Enatsu, et al.. (2016). OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET. IEEE Electron Device Letters. 37(12). 1601–1604. 68 indexed citations
16.
Yang, Ling, L.-J. Chou, Anchal Agarwal, & Angus Rockett. (2002). Single crystal and polycrystalline CuInSe/sub 2/ by the hybrid sputtering and evaporation method. 1185–1189. 5 indexed citations
17.
Martin, G., S. Strite, A. Botchkarev, et al.. (1995). Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy. Journal of Electronic Materials. 24(4). 225–227. 13 indexed citations
18.
Lambrecht, Walter R. L., B. Segall, S. Strite, et al.. (1994). X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3dstates in GaN. Physical review. B, Condensed matter. 50(19). 14155–14160. 91 indexed citations
19.
Martin, G., S. Strite, A. Botchkarev, et al.. (1994). Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy. Applied Physics Letters. 65(5). 610–612. 192 indexed citations
20.
Demirel, A. Levent, S. Strite, Anchal Agarwal, et al.. (1992). Reduction of outdiffusion at the Ge/GaAs (100) interface by low temperature growth. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 664–667. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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