Chirag Gupta

1.7k total citations
84 papers, 1.4k citations indexed

About

Chirag Gupta is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Chirag Gupta has authored 84 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Condensed Matter Physics, 43 papers in Electrical and Electronic Engineering and 31 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Chirag Gupta's work include GaN-based semiconductor devices and materials (64 papers), Ga2O3 and related materials (31 papers) and Semiconductor materials and devices (31 papers). Chirag Gupta is often cited by papers focused on GaN-based semiconductor devices and materials (64 papers), Ga2O3 and related materials (31 papers) and Semiconductor materials and devices (31 papers). Chirag Gupta collaborates with scholars based in United States, India and Australia. Chirag Gupta's co-authors include S. Keller, Umesh K. Mishra, Anchal Agarwal, Silvia H. Chan, Shubhra S. Pasayat, Yuuki Enatsu, Steven P. DenBaars, Shuji Nakamura, Cory Lund and Junqian Liu and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Chirag Gupta

78 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chirag Gupta United States 20 1.1k 787 551 463 189 84 1.4k
Jing Lang China 18 603 0.6× 232 0.3× 336 0.6× 374 0.8× 199 1.1× 54 1.0k
Stephan Schwaiger Germany 18 397 0.4× 271 0.3× 370 0.7× 292 0.6× 311 1.6× 41 803
Ramakrishna Vetury United States 18 669 0.6× 623 0.8× 166 0.3× 421 0.9× 204 1.1× 35 998
Fred List United States 10 535 0.5× 161 0.2× 248 0.5× 455 1.0× 103 0.5× 17 979
Pingxiang Zhang China 16 562 0.5× 142 0.2× 349 0.6× 367 0.8× 99 0.5× 188 1.1k
F.A. List United States 15 626 0.6× 177 0.2× 296 0.5× 544 1.2× 127 0.7× 34 1.1k
T. Lalinský Slovakia 17 417 0.4× 634 0.8× 157 0.3× 230 0.5× 194 1.0× 113 872
J. Ramer United States 17 933 0.9× 500 0.6× 358 0.6× 525 1.1× 308 1.6× 38 1.1k
Renbo Song China 16 289 0.3× 214 0.3× 197 0.4× 596 1.3× 172 0.9× 49 1.0k
Daisaku Yokoe Japan 15 246 0.2× 202 0.3× 134 0.2× 297 0.6× 57 0.3× 51 636

Countries citing papers authored by Chirag Gupta

Since Specialization
Citations

This map shows the geographic impact of Chirag Gupta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chirag Gupta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chirag Gupta more than expected).

Fields of papers citing papers by Chirag Gupta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chirag Gupta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chirag Gupta. The network helps show where Chirag Gupta may publish in the future.

Co-authorship network of co-authors of Chirag Gupta

This figure shows the co-authorship network connecting the top 25 collaborators of Chirag Gupta. A scholar is included among the top collaborators of Chirag Gupta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chirag Gupta. Chirag Gupta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pasayat, Shubhra S., et al.. (2025). >2.7 kV Al0.65Ga0.35N Channel HEMT on Bulk AlN Substrate With >400 MW/cm² Baliga Figure of Merit. IEEE Electron Device Letters. 46(11). 2102–2105.
2.
3.
Lu, Yi, Jiarui Gong, Haicheng Cao, et al.. (2025). High Rectification, Low Leakage p-Si/n-AlN Heterojunction PN Diode. IEEE Electron Device Letters. 46(7). 1219–1222. 1 indexed citations
4.
5.
Gupta, Chirag, et al.. (2024). Refueling analysis of Type IV composite tank as per SAEJ2601 with refueling station configuration. International Journal of Hydrogen Energy. 78. 970–983. 3 indexed citations
6.
Liu, Cheng, Yuting Li, Nelson Tansu, et al.. (2024). 376 nm High-Power UV-A Laser Diodes With GaN Waveguide. IEEE Photonics Technology Letters. 36(24). 1449–1452.
7.
Mawst, L. J., et al.. (2024). p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of ∼800 V. Applied Physics Letters. 124(7). 12 indexed citations
8.
Pasayat, Shubhra S., et al.. (2024). 3 kV monolithic bidirectional GaN HEMT on sapphire. Applied Physics Express. 18(1). 16501–16501. 1 indexed citations
9.
Stephenson, Kenneth, et al.. (2024). Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V. 1–2. 3 indexed citations
10.
Stephenson, Kenneth, et al.. (2024). 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates. Applied Physics Express. 18(1). 16504–16504. 5 indexed citations
11.
Gong, Jiarui, Fikadu Alema, A. Osinsky, et al.. (2024). 0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode. IEEE Electron Device Letters. 45(3). 444–447. 15 indexed citations
12.
Tansu, Nelson, et al.. (2023). Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(6). 1 indexed citations
13.
Pasayat, Shubhra S., et al.. (2023). High-Voltage (>1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2). IEEE Transactions on Electron Devices. 71(1). 733–738. 12 indexed citations
14.
Liu, Wenjian, et al.. (2020). An improved methodology for extracting interface state density at Si3N4/GaN. Applied Physics Letters. 116(2). 26 indexed citations
15.
Li, Weiyi, Shubhra S. Pasayat, Matthew Guidry, et al.. (2020). First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel. Semiconductor Science and Technology. 35(7). 75007–75007. 11 indexed citations
16.
Hatui, Nirupam, Athith Krishna, He‐Ping Li, et al.. (2020). Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition. Semiconductor Science and Technology. 35(9). 95002–95002. 17 indexed citations
17.
Pasayat, Shubhra S., Chirag Gupta, Daniel A. Cohen, et al.. (2019). Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN. Semiconductor Science and Technology. 34(11). 115020–115020. 35 indexed citations
18.
Pasayat, Shubhra S., Elaheh Ahmadi, Brian Romanczyk, et al.. (2019). First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE. Semiconductor Science and Technology. 34(4). 45009–45009. 20 indexed citations
19.
Liu, Wenjian, Silvia H. Chan, Chirag Gupta, et al.. (2019). Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN. Applied Physics Letters. 115(3). 16 indexed citations
20.
Gupta, Chirag, et al.. (2018). Support Recovery for Orthogonal Matching Pursuit: Upper and Lower bounds. Neural Information Processing Systems. 31. 10814–10824. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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