Shubhra S. Pasayat

848 total citations
46 papers, 629 citations indexed

About

Shubhra S. Pasayat is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, Shubhra S. Pasayat has authored 46 papers receiving a total of 629 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Condensed Matter Physics, 21 papers in Electronic, Optical and Magnetic Materials and 21 papers in Materials Chemistry. Recurrent topics in Shubhra S. Pasayat's work include GaN-based semiconductor devices and materials (43 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (18 papers). Shubhra S. Pasayat is often cited by papers focused on GaN-based semiconductor devices and materials (43 papers), Ga2O3 and related materials (21 papers) and ZnO doping and properties (18 papers). Shubhra S. Pasayat collaborates with scholars based in United States, Australia and Saudi Arabia. Shubhra S. Pasayat's co-authors include Chirag Gupta, Umesh K. Mishra, S. Keller, Shuji Nakamura, Steven P. DenBaars, Matthew S. Wong, Ryan Ley, Michael J. Gordon, Brian Romanczyk and Samuel Graham and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Shubhra S. Pasayat

42 papers receiving 610 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Shubhra S. Pasayat United States 13 514 331 279 246 107 46 629
Tae Mochizuki Japan 7 506 1.0× 260 0.8× 200 0.7× 308 1.3× 99 0.9× 14 548
Z. L. Xie China 14 412 0.8× 280 0.8× 161 0.6× 259 1.1× 79 0.7× 52 552
K. Y. Zang Singapore 15 369 0.7× 268 0.8× 200 0.7× 214 0.9× 100 0.9× 38 498
Cory Lund United States 15 619 1.2× 195 0.6× 398 1.4× 276 1.1× 82 0.8× 31 698
Nirupam Hatui United States 18 851 1.7× 362 1.1× 483 1.7× 451 1.8× 105 1.0× 56 980
Jr‐Tai Chen Sweden 13 469 0.9× 186 0.6× 336 1.2× 258 1.0× 41 0.4× 34 557
Reet Chaudhuri United States 13 515 1.0× 171 0.5× 381 1.4× 259 1.1× 50 0.5× 25 641
Ž. Gačević Spain 15 420 0.8× 282 0.9× 225 0.8× 190 0.8× 80 0.7× 38 611
Andrew Klump United States 15 462 0.9× 201 0.6× 274 1.0× 341 1.4× 65 0.6× 31 592

Countries citing papers authored by Shubhra S. Pasayat

Since Specialization
Citations

This map shows the geographic impact of Shubhra S. Pasayat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shubhra S. Pasayat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shubhra S. Pasayat more than expected).

Fields of papers citing papers by Shubhra S. Pasayat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shubhra S. Pasayat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shubhra S. Pasayat. The network helps show where Shubhra S. Pasayat may publish in the future.

Co-authorship network of co-authors of Shubhra S. Pasayat

This figure shows the co-authorship network connecting the top 25 collaborators of Shubhra S. Pasayat. A scholar is included among the top collaborators of Shubhra S. Pasayat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shubhra S. Pasayat. Shubhra S. Pasayat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pasayat, Shubhra S., et al.. (2025). >2.7 kV Al0.65Ga0.35N Channel HEMT on Bulk AlN Substrate With >400 MW/cm² Baliga Figure of Merit. IEEE Electron Device Letters. 46(11). 2102–2105.
2.
3.
4.
Zhang, Shijie & Shubhra S. Pasayat. (2024). Impact of nanopores in porous GaN on LED emission based on FDTD simulations. Photonics and Nanostructures - Fundamentals and Applications. 61. 101296–101296.
5.
Gong, Jiarui, Fikadu Alema, A. Osinsky, et al.. (2024). 0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode. IEEE Electron Device Letters. 45(3). 444–447. 15 indexed citations
6.
Li, Yuting, Wentao Zhang, Timothy K. Shih, et al.. (2024). Demonstration of Near‐Size‐Independent External Quantum Efficiency for 368 nm UV Micro‐LEDs. physica status solidi (RRL) - Rapid Research Letters. 18(11). 1 indexed citations
7.
Pasayat, Shubhra S., et al.. (2024). 3 kV monolithic bidirectional GaN HEMT on sapphire. Applied Physics Express. 18(1). 16501–16501. 1 indexed citations
8.
Stephenson, Kenneth, et al.. (2024). 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates. Applied Physics Express. 18(1). 16504–16504. 5 indexed citations
9.
Liu, Cheng, Yuting Li, Nelson Tansu, et al.. (2024). 376 nm High-Power UV-A Laser Diodes With GaN Waveguide. IEEE Photonics Technology Letters. 36(24). 1449–1452.
10.
11.
Pasayat, Shubhra S., et al.. (2023). High-Voltage (>1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 mΩ ⋅ cm2). IEEE Transactions on Electron Devices. 71(1). 733–738. 12 indexed citations
12.
Li, Yuting, et al.. (2023). MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity. Crystals. 13(3). 446–446. 2 indexed citations
13.
Tansu, Nelson, et al.. (2023). Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(6). 1 indexed citations
14.
Liu, Wenjian, Shubhra S. Pasayat, Aidan A. Taylor, et al.. (2021). Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films. Applied Physics Letters. 119(4). 2 indexed citations
15.
Hatui, Nirupam, Athith Krishna, Shubhra S. Pasayat, S. Keller, & Umesh K. Mishra. (2021). Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films. Electronics. 10(10). 1182–1182. 3 indexed citations
16.
Guidry, Matthew, Brian Romanczyk, Nirupam Hatui, et al.. (2020). A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1–2. 7 indexed citations
17.
Li, Weiyi, Shubhra S. Pasayat, Matthew Guidry, et al.. (2020). First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel. Semiconductor Science and Technology. 35(7). 75007–75007. 11 indexed citations
18.
Pasayat, Shubhra S., Ryan Ley, Chirag Gupta, et al.. (2020). Color-tunable <10  μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates. Applied Physics Letters. 117(6). 50 indexed citations
19.
Pasayat, Shubhra S., Chirag Gupta, Daniel A. Cohen, et al.. (2019). Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN. Semiconductor Science and Technology. 34(11). 115020–115020. 35 indexed citations
20.
Pasayat, Shubhra S., Elaheh Ahmadi, Brian Romanczyk, et al.. (2019). First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE. Semiconductor Science and Technology. 34(4). 45009–45009. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Tae Mochizuki Breakdown of academic impact, for papers by Z. L. Xie Breakdown of academic impact, for papers by K. Y. Zang Breakdown of academic impact, for papers by Cory Lund Breakdown of academic impact, for papers by Nirupam Hatui Breakdown of academic impact, for papers by Jr‐Tai Chen Breakdown of academic impact, for papers by Reet Chaudhuri Breakdown of academic impact, for papers by Ž. Gačević Breakdown of academic impact, for papers by Andrew Klump
Rankless by CCL
2026