Athith Krishna

470 total citations
16 papers, 379 citations indexed

About

Athith Krishna is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Athith Krishna has authored 16 papers receiving a total of 379 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 11 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Athith Krishna's work include GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (7 papers) and Semiconductor materials and devices (6 papers). Athith Krishna is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (7 papers) and Semiconductor materials and devices (6 papers). Athith Krishna collaborates with scholars based in United States. Athith Krishna's co-authors include S. Keller, Nirupam Hatui, Umesh K. Mishra, Brian Romanczyk, Christian Wurm, Matthew Guidry, Elaheh Ahmadi, Xun Zheng, Haoran Li and Chirag Gupta and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Semiconductor Science and Technology.

In The Last Decade

Athith Krishna

16 papers receiving 370 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Athith Krishna United States	11	340	255	172	98	84	16	379
Christian Wurm United States	12	420 1.2×	283 1.1×	193 1.1×	108 1.1×	134 1.6×	27	459
Dirk Fahle Germany	13	390 1.1×	309 1.2×	163 0.9×	89 0.9×	86 1.0×	31	421
Yueh-Chin Lin Taiwan	12	231 0.7×	324 1.3×	118 0.7×	90 0.9×	102 1.2×	52	402
Ivor Guiney United Kingdom	12	252 0.7×	269 1.1×	121 0.7×	63 0.6×	65 0.8×	41	349
Qilong Bao China	11	423 1.2×	310 1.2×	222 1.3×	104 1.1×	75 0.9×	14	444
S. S. Su China	10	250 0.7×	250 1.0×	205 1.2×	72 0.7×	69 0.8×	25	341
Joachim Wuerfl Germany	10	370 1.1×	379 1.5×	158 0.9×	72 0.7×	80 1.0×	23	466
Chia-Hsun Wu Taiwan	13	314 0.9×	271 1.1×	162 0.9×	91 0.9×	53 0.6×	22	374
Joshua Perozek United States	8	306 0.9×	243 1.0×	158 0.9×	101 1.0×	48 0.6×	13	355
Jori Lemettinen Finland	11	336 1.0×	219 0.9×	178 1.0×	109 1.1×	71 0.8×	20	388

Countries citing papers authored by Athith Krishna

Since Specialization

Citations

This map shows the geographic impact of Athith Krishna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Athith Krishna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Athith Krishna more than expected).

Fields of papers citing papers by Athith Krishna

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Athith Krishna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Athith Krishna. The network helps show where Athith Krishna may publish in the future.

Co-authorship network of co-authors of Athith Krishna

This figure shows the co-authorship network connecting the top 25 collaborators of Athith Krishna. A scholar is included among the top collaborators of Athith Krishna based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Athith Krishna. Athith Krishna is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Krishna, Athith, Brian Romanczyk, Nirupam Hatui, et al.. (2022). GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate. IEEE Electron Device Letters. 44(1). 9–12. 11 indexed citations

Krishna, Athith, et al.. (2022). Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices. Applied Physics Letters. 120(13). 7 indexed citations

Krishna, Athith, et al.. (2022). Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices. Crystals. 12(6). 784–784. 2 indexed citations

Mohanty, Subhajit, et al.. (2021). HfO ₂ as gate insulator on N-polar GaN–AlGaN heterostructures. Semiconductor Science and Technology. 36(3). 35017–35017. 7 indexed citations

Hatui, Nirupam, Athith Krishna, Shubhra S. Pasayat, S. Keller, & Umesh K. Mishra. (2021). Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films. Electronics. 10(10). 1182–1182. 3 indexed citations

Krishna, Athith, Nirupam Hatui, Brian Romanczyk, et al.. (2021). GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current. 2021 IEEE International Electron Devices Meeting (IEDM). 5.4.1–5.4.4. 15 indexed citations

Guidry, Matthew, Brian Romanczyk, Nirupam Hatui, et al.. (2020). A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. 1–2. 7 indexed citations

Liu, Wenjian, et al.. (2020). Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices. Semiconductor Science and Technology. 35(9). 95027–95027. 10 indexed citations

Hatui, Nirupam, Athith Krishna, He‐Ping Li, et al.. (2020). Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition. Semiconductor Science and Technology. 35(9). 95002–95002. 17 indexed citations

10.

Guidry, Matthew, Brian Romanczyk, Nirupam Hatui, et al.. (2020). High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz. IEEE Electron Device Letters. 41(5). 681–684. 64 indexed citations

11.

Krishna, Athith, et al.. (2020). Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors. Applied Physics Letters. 117(4). 13 indexed citations

12.

Romanczyk, Brian, Weiyi Li, Matthew Guidry, et al.. (2020). N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density. IEEE Electron Device Letters. 41(11). 1633–1636. 38 indexed citations

13.

Romanczyk, Brian, Xun Zheng, Matthew Guidry, et al.. (2020). W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs. IEEE Electron Device Letters. 41(3). 349–352. 91 indexed citations

14.

Krishna, Athith, et al.. (2020). Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current. IEEE Electron Device Letters. 41(2). 220–223. 41 indexed citations

15.

Krishna, Athith, et al.. (2019). AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment. physica status solidi (a). 217(7). 26 indexed citations

16.

Krishna, Athith, et al.. (2019). Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors. Applied Physics Letters. 115(17). 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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