Athith Krishna

470 citations

16 papers · 379 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 16
- GaN-based semiconductor devices and materials 16
Electronic, Optical and Magnetic Materials 7
- Ga2O3 and related materials 7

Co-authors: S. Keller (16 shared papers)Nirupam Hatui (14 shared papers)Umesh K. Mishra (13 shared papers)Brian Romanczyk (7 shared papers)Matthew Guidry (5 shared papers)Christian Wurm (5 shared papers)Elaheh Ahmadi (3 shared papers)Xun Zheng (1 shared paper)
Journals: IEEE Electron Device Letters (5 papers)Semiconductor Science and Technology (3 papers)Applied Physics Letters (3 papers)physica status solidi (a) (1 paper)Electronics (1 paper)
Partner nations: United States

In The Last Decade

Athith Krishna

16 papers receiving 370 citations

Peers

Countries citing papers authored by Athith Krishna

Since Specialization

Citations

This map shows the geographic impact of Athith Krishna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Athith Krishna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Athith Krishna more than expected).

Fields of papers citing papers by Athith Krishna

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Athith Krishna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Athith Krishna. The network helps show where Athith Krishna may publish in the future.

Co-authors

The 20 scholars most cited alongside Athith Krishna, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Athith Krishna Line = papers co-authored together Athith Krishna links everyone, so they are left out of the graph.

All Works

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16 of 16 papers shown

#	Work
1	W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs IEEE Electron Device Letters ·Brian Romanczyk, Xun Zheng, Matthew Guidry, Haoran Li, Nirupam Hatui, Christian Wurm, Athith Krishna, Elaheh Ahmadi, S. Keller, Umesh K. Mishra	2020	91
2	High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz IEEE Electron Device Letters ·Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Rohit R. Karnaty, S. Keller, James F. Buckwalter, Umesh K. Mishra	2020	64
3	Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current IEEE Electron Device Letters ·Aditya Raj, Athith Krishna, Nirupam Hatui, Chirag Gupta, Raina Jang, S. Keller, Umesh K. Mishra	2020	41
4	N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density IEEE Electron Device Letters ·Brian Romanczyk, Weiyi Li, Matthew Guidry, Nirupam Hatui, Athith Krishna, Christian Wurm, S. Keller, Umesh K. Mishra	2020	38
5	Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors Applied Physics Letters ·Athith Krishna, Aditya Raj, Nirupam Hatui, S. Keller, Umesh K. Mishra	2019	27
6	AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment physica status solidi (a) ·Athith Krishna, Aditya Raj, Nirupam Hatui, Onur S. Koksaldi, Raina Jang, S. Keller, Umesh K. Mishra	2019	26
7	Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition Semiconductor Science and Technology ·Nirupam Hatui, Athith Krishna, He‐Ping Li, Chirag Gupta, Brian Romanczyk, Dillon Acker-James, Elaheh Ahmadi, S. Keller, U. K. Mishra	2020	17
8	GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current 2021 IEEE International Electron Devices Meeting (IEDM) ·Aditya Raj, Athith Krishna, Nirupam Hatui, Brian Romanczyk, Christian Wurm, Matthew Guidry, Robert Hamwey, N. Pakala, S. Keller, Umesh K. Mishra	2021	15
9	Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors Applied Physics Letters ·Athith Krishna, Aditya Raj, Nirupam Hatui, Islam Sayed, S. Keller, Umesh K. Mishra	2020	13
10	GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate IEEE Electron Device Letters ·Aditya Raj, Athith Krishna, Brian Romanczyk, Nirupam Hatui, Wenjian Liu, S. Keller, Umesh K. Mishra	2022	11
11	Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices Semiconductor Science and Technology ·Islam Sayed, Wenjian Liu, Jana Georgieva, Athith Krishna, S. Keller, Umesh K. Mishra	2020	10
12	A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, S. Keller, James F. Buckwalter, Umesh K. Mishra	2020	7
13	HfO ₂ as gate insulator on N-polar GaN–AlGaN heterostructures Semiconductor Science and Technology ·Christopher J. Clymore, Subhajit Mohanty, Zhe Jian, Athith Krishna, S. Keller, Elaheh Ahmadi	2021	7
14	Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices Applied Physics Letters ·Athith Krishna, Aditya Raj, Nirupam Hatui, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2022	7
15	Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films Electronics ·Nirupam Hatui, Athith Krishna, Shubhra S. Pasayat, S. Keller, Umesh K. Mishra	2021	3
16	Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices Crystals ·Athith Krishna, Aditya Raj, Nirupam Hatui, S. Keller, Umesh Mishra	2022	2

About Athith Krishna

Athith Krishna is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 16 papers that have together received 379 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (7 papers), Semiconductor materials and devices (6 papers), Silicon Carbide Semiconductor Technologies (5 papers), ZnO doping and properties (4 papers), Radio Frequency Integrated Circuit Design (4 papers), Semiconductor Quantum Structures and Devices (3 papers) and Metal and Thin Film Mechanics (1 paper). The work is most often cited by research in Condensed Matter Physics (340 citations), Electronic, Optical and Magnetic Materials (172 citations), Electrical and Electronic Engineering (255 citations), Atomic and Molecular Physics, and Optics (84 citations) and Materials Chemistry (98 citations). Athith Krishna has collaborated with scholars based in United States. Frequent co-authors include S. Keller, Nirupam Hatui, Umesh K. Mishra, Brian Romanczyk, Matthew Guidry, Christian Wurm, Elaheh Ahmadi, Xun Zheng, Haoran Li and Chirag Gupta. Their work appears in journals such as IEEE Electron Device Letters, Semiconductor Science and Technology, Applied Physics Letters, physica status solidi (a) and Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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