Brian L. Swenson

1.3k citations

24 papers · 998 indexed · h-index 14

Condensed Matter Physics top 1%
Electrical and Electronic Engineering top 5%
Electronic, Optical and Magnetic Materials top 5%
Materials Chemistry
Atomic and Molecular Physics, and Optics top 10%

Co-authors: Umesh K. Mishra Srabanti Chowdhury Man Hoi Wong Masataka Higashiwaki Yifeng Wu L. Shen R.P. Smith James S. Speck
Topics: GaN-based semiconductor devices and materials (23 papers)Semiconductor materials and devices (16 papers)Ga2O3 and related materials (12 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Power Electronics
Partner nations: United States Japan

In The Last Decade

Brian L. Swenson

23 papers receiving 947 citations

Peers

Countries citing papers authored by Brian L. Swenson

Since Specialization

Citations

This map shows the geographic impact of Brian L. Swenson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Brian L. Swenson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Brian L. Swenson more than expected).

Fields of papers citing papers by Brian L. Swenson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Brian L. Swenson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Brian L. Swenson. The network helps show where Brian L. Swenson may publish in the future.

Co-authorship network of co-authors of Brian L. Swenson

This figure shows the co-authorship network connecting the top 25 collaborators of Brian L. Swenson. A scholar is included among the top collaborators of Brian L. Swenson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Brian L. Swenson. Brian L. Swenson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications 2022 ·2022 International Electron Devices Meeting (IEDM) ·Geetak Gupta,Masahito Kanamura,Brian L. Swenson,Carl J. Neufeld,T. Hosoda,P. Parikh,R. Lal,Umesh K. Mishra	11
2	Current status and scope of gallium nitride-based vertical transistors for high-power electronics application 2013 ·Semiconductor Science and Technology ·Srabanti Chowdhury,Brian L. Swenson,Man Hoi Wong,Umesh K. Mishra	120
3	A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency 2013 ·Semiconductor Science and Technology ·(unknown),David F. Brown,Brian L. Swenson,S. Keller,James S. Speck,Umesh K. Mishra	13
4	kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz 2013 ·IEEE Transactions on Power Electronics ·Yifeng Wu,(unknown),L. Shen,R.P. Smith,Brian L. Swenson	102
5	Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors 2013 ·Journal of Applied Physics ·Ramya Yeluri,(unknown),Brian L. Swenson,Jing Lu,S. Keller,Umesh K. Mishra	35
6	Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material 2012 ·Journal of Applied Physics ·Ramya Yeluri,Brian L. Swenson,Umesh K. Mishra	27
7	InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs) 2012 ·Journal of Electronic Materials ·Shalini Lal,(unknown),Jing Lu,Brian L. Swenson,S. Keller,Steven P. DenBaars,Umesh K. Mishra	10
8	Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers 2011 ·Japanese Journal of Applied Physics ·Srabanti Chowdhury,Brian L. Swenson,Jing Lu,Umesh K. Mishra	6
9	CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion 2011 ·IEEE Electron Device Letters ·Srabanti Chowdhury,Man Hoi Wong,Brian L. Swenson,Umesh K. Mishra	149
10	Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth 2010 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Uttam Singisetti,Man Hoi Wong,Sansaptak Dasgupta,Nidhi Nidhi,Brian L. Swenson,B.J. Thibeault,James S. Speck,Umesh K. Mishra	3
11	N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications 2010 ·IEEE Electron Device Letters ·Nidhi Nidhi,Sansaptak Dasgupta,Yi Pei,Brian L. Swenson,S. Keller,James S. Speck,Umesh K. Mishra	14
12	N-polar GaN-based MIS-HEMTs for mixed signal applications 2010 ·2010 IEEE MTT-S International Microwave Symposium ·Umesh K. Mishra,Man Hoi Wong,Nidhi Nidhi,Sansaptak Dasgupta,David F. Brown,Brian L. Swenson,S. Keller,James S. Speck	1
13	Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures 2010 ·Applied Physics Letters ·Masataka Higashiwaki,Srabanti Chowdhury,Brian L. Swenson,Umesh K. Mishra	63
14	N-polar GaN-based MIS-HEMTs for Mixed Signal Applications 2010 ·2010 IEEE MTT-S International Microwave Symposium ·Umesh K. Mishra,Man Hoi Wong,N. Nidhi,Sandeepan DasGupta,David F. Brown,Brian L. Swenson,S. Keller,James S. Speck	2
15	Dispersion-free AlGaN/GaN CAVET with low R<inf>on</inf> achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer 2010 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Srabanti Chowdhury,Man Hoi Wong,Brian L. Swenson,Umesh K. Mishra	2
16	Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth 2010 ·IEEE Electron Device Letters ·Uttam Singisetti,Man Hoi Wong,Sansaptak Dasgupta,(unknown),Brian L. Swenson,B.J. Thibeault,James S. Speck,Umesh K. Mishra	54
17	Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface 2009 ·Journal of Applied Physics ·Brian L. Swenson,Umesh K. Mishra	101
18	N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier 2008 ·IEEE Electron Device Letters ·Man Hoi Wong,Yi Pei,Rongming Chu,Siddharth Rajan,Brian L. Swenson,David F. Brown,S. Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra	41
19	Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer 2008 ·IEEE Electron Device Letters ·Srabanti Chowdhury,Brian L. Swenson,Umesh K. Mishra	131
20	The Development of the University of Wisconsin's Parallel Hybrid-Electric Aluminum Intensive Vehicle 1999 ·SAE technical papers on CD-ROM/SAE technical paper series ·(unknown),(unknown),(unknown),(unknown),Brian L. Swenson,Glenn R. Bower	6

About Brian L. Swenson

Brian L. Swenson is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 24 papers that have together received 998 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (16 papers) and Ga2O3 and related materials (12 papers). The work is most often cited by research in Condensed Matter Physics (885 citations), Electronic, Optical and Magnetic Materials (483 citations) and Electrical and Electronic Engineering (719 citations). Brian L. Swenson has collaborated with scholars based in United States and Japan. Frequent co-authors include Umesh K. Mishra, Srabanti Chowdhury, Man Hoi Wong, Masataka Higashiwaki, Yifeng Wu, L. Shen, R.P. Smith, James S. Speck, S. Keller and Ramya Yeluri. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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