Matthew T. Hardy

3.4k total citations · 1 hit paper
72 papers, 2.8k citations indexed

About

Matthew T. Hardy is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, Matthew T. Hardy has authored 72 papers receiving a total of 2.8k indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Condensed Matter Physics, 34 papers in Electrical and Electronic Engineering and 26 papers in Biomedical Engineering. Recurrent topics in Matthew T. Hardy's work include GaN-based semiconductor devices and materials (61 papers), Metal and Thin Film Mechanics (24 papers) and Semiconductor Quantum Structures and Devices (22 papers). Matthew T. Hardy is often cited by papers focused on GaN-based semiconductor devices and materials (61 papers), Metal and Thin Film Mechanics (24 papers) and Semiconductor Quantum Structures and Devices (22 papers). Matthew T. Hardy collaborates with scholars based in United States, Japan and Russia. Matthew T. Hardy's co-authors include Jang‐Ung Park, John A. Rogers, Chang Young Lee, Placid M. Ferreira, Seong Jun Kang, Michael S. Strano, Andrew G. Alleyne, John G. Georgiadis, Kira Barton and Steven P. DenBaars and has published in prestigious journals such as Nature Materials, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Matthew T. Hardy

70 papers receiving 2.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High-resolution electrohydrodynamic jet printing

2007 1.2k citations Jang‐Ung Park, Matthew T. Hardy et al. Nature Materials profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Matthew T. Hardy United States	26	1.5k	1.3k	1.2k	641	629	72	2.8k
David Hwang United States	15	1.1k 0.7×	704 0.6×	1.4k 1.1×	573 0.9×	345 0.5×	27	2.4k
P. Mei United States	24	1.7k 1.1×	496 0.4×	1.0k 0.8×	696 1.1×	525 0.8×	92	2.6k
Rebecca Cheung United Kingdom	28	1.6k 1.1×	260 0.2×	1.1k 0.9×	971 1.5×	716 1.1×	178	2.8k
А. М. Гришин Sweden	33	2.1k 1.4×	517 0.4×	1.1k 0.9×	1.9k 3.0×	1.3k 2.1×	260	4.0k
Barbara Stadlober Austria	32	2.0k 1.3×	443 0.3×	1.8k 1.5×	614 1.0×	377 0.6×	121	3.7k
Peichen Yu Taiwan	33	2.3k 1.5×	681 0.5×	1.3k 1.0×	1.3k 2.0×	926 1.5×	194	3.4k
B. S. Krusor United States	25	1.0k 0.7×	881 0.7×	413 0.3×	493 0.8×	582 0.9×	72	1.8k
Luca Nela Switzerland	18	1.1k 0.7×	764 0.6×	460 0.4×	468 0.7×	217 0.3×	33	2.1k
S. Baunack Germany	31	1.5k 0.9×	151 0.1×	836 0.7×	1.0k 1.6×	531 0.8×	108	3.1k
Jae‐Hyun Ryou United States	38	2.7k 1.7×	2.9k 2.3×	1.6k 1.3×	1.9k 3.0×	1.7k 2.7×	257	5.4k

Countries citing papers authored by Matthew T. Hardy

Since Specialization

Citations

This map shows the geographic impact of Matthew T. Hardy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matthew T. Hardy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matthew T. Hardy more than expected).

Fields of papers citing papers by Matthew T. Hardy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matthew T. Hardy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matthew T. Hardy. The network helps show where Matthew T. Hardy may publish in the future.

Co-authorship network of co-authors of Matthew T. Hardy

This figure shows the co-authorship network connecting the top 25 collaborators of Matthew T. Hardy. A scholar is included among the top collaborators of Matthew T. Hardy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matthew T. Hardy. Matthew T. Hardy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hardy, Matthew T., Andrew C. Lang, James L. Hart, et al.. (2024). Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy. Journal of Electronic Materials. 54(6). 4291–4298.

Jin, Eric N., Andrew C. Lang, Brian P. Downey, et al.. (2023). Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures. Journal of Applied Physics. 134(2). 5 indexed citations

Hardy, Matthew T., Andrew C. Lang, Eric N. Jin, et al.. (2023). Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy. Journal of Applied Physics. 134(10). 13 indexed citations

Gokhale, Vikrant J., Matthew T. Hardy, D. S. Katzer, & Brian P. Downey. (2023). X–Ka Band Epitaxial ScAlN/AlN/NbN/SiC High-Overtone Bulk Acoustic Resonators. IEEE Electron Device Letters. 44(4). 674–677. 15 indexed citations

Jin, Eric N., Brian P. Downey, Vikrant J. Gokhale, et al.. (2021). Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures. APL Materials. 9(11). 8 indexed citations

Storm, David F., Tyler A. Growden, Jeffrey W. Daulton, et al.. (2020). Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(3). 6 indexed citations

Jin, Eric N., Matthew T. Hardy, A. Mock, et al.. (2020). Band Alignment of Sc_xAl_1–xN/GaN Heterojunctions. ACS Applied Materials & Interfaces. 12(46). 52192–52200. 38 indexed citations

Jin, Eric N., Andrew C. Lang, Matthew T. Hardy, et al.. (2020). Epitaxial growth of SrCaTiO3 films on GaN by molecular beam epitaxy with a TiO2 buffer layer. Journal of Applied Physics. 127(21). 4 indexed citations

Nepal, Neeraj, D. S. Katzer, Brian P. Downey, et al.. (2020). Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(6). 53 indexed citations

10.

Katzer, D. S., Matthew T. Hardy, Neeraj Nepal, et al.. (2020). Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 38(3). 2 indexed citations

11.

Katzer, D. S., Neeraj Nepal, Matthew T. Hardy, et al.. (2019). Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications. physica status solidi (a). 217(3). 24 indexed citations

12.

Hardy, Matthew T., David J. Meyer, Neeraj Nepal, et al.. (2018). Scandium Aluminum Nitride as an Emerging Material for High Power Transistors. 1–3. 6 indexed citations

13.

Hardy, Matthew T., Brian P. Downey, Neeraj Nepal, et al.. (2017). Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates. Applied Physics Letters. 110(16). 130 indexed citations

14.

Storm, David F., Matthew T. Hardy, D. S. Katzer, et al.. (2017). Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(2). 27 indexed citations

15.

Downey, Brian P., D. S. Katzer, Neeraj Nepal, Matthew T. Hardy, & David J. Meyer. (2017). XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 35(5). 4 indexed citations

16.

Hardy, Matthew T., David F. Storm, D. S. Katzer, et al.. (2016). Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors. Journal of Visualized Experiments. 2 indexed citations

17.

Nepal, Neeraj, D. S. Katzer, David J. Meyer, et al.. (2016). Characterization of molecular beam epitaxy grown β-Nb₂N films and AlN/β-Nb₂N heterojunctions on 6H-SiC substrates. Applied Physics Express. 9(2). 21003–21003. 17 indexed citations

18.

Hardy, Matthew T., David F. Storm, Neeraj Nepal, et al.. (2015). Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates. Journal of Crystal Growth. 425. 119–124. 14 indexed citations

19.

Lin, You-Da, Matthew T. Hardy, Po Shan Hsu, et al.. (2009). Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate. Applied Physics Express. 2. 82102–82102. 50 indexed citations

20.

Park, Jang‐Ung, Matthew T. Hardy, Seong Jun Kang, et al.. (2007). High-resolution electrohydrodynamic jet printing. Nature Materials. 6(10). 782–789. 1217 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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