R.S. Balmer

2.3k citations

53 papers · 1.9k indexed · h-index 21

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Condensed Matter Physics 43
- GaN-based semiconductor devices and materials 43
Electrical and Electronic Engineering 44
- Semiconductor materials and devices 24
- Silicon Carbide Semiconductor Technologies 20
- Radio Frequency Integrated Circuit Design 10

Co-authors: Michael J. Uren Martin Kuball T. Martin K.P. Hilton Trevor Martin B.T. Hughes Andrei Sarua J.C.H. Birbeck
Journals: Applied Physics Letters (8 papers)Journal of Crystal Growth (5 papers)Journal of Applied Physics (4 papers)IEEE Electron Device Letters (3 papers)IEEE Transactions on Electron Devices (3 papers)
Partner nations: United Kingdom Germany Sweden

In The Last Decade

R.S. Balmer

52 papers receiving 1.9k citations

Peers

Countries citing papers authored by R.S. Balmer

Since Specialization

Citations

This map shows the geographic impact of R.S. Balmer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.S. Balmer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.S. Balmer more than expected).

Fields of papers citing papers by R.S. Balmer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.S. Balmer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.S. Balmer. The network helps show where R.S. Balmer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R.S. Balmer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R.S. Balmer Line = papers co-authored together R.S. Balmer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A lateral time-of-flight system for charge transport studies Diamond and Related Materials ·Jan Isberg, Saman Majdi, Markus Gabrysch, I. Friel, R.S. Balmer	2009	10
2	Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis IEEE Transactions on Electron Devices ·Kyle Wenck, A. Tajani, Daniel J. Twitchen, 隆彦加地, Florin Udrea, T. Butler, N.L. Rupesinghe, M. Brezeanu, Jan Isberg, 登志子手嶋, G. N. Nechepurenko, R.S. Balmer, Immacolata Eramo, Paul D. Taylor, G.A.J. Amaratunga	2008	47
3	Optical investigation of exciton localization in AlxGa1−xN Journal of Applied Physics ·Teena Patel, P. J. Parbrook, Tao Wang, F. Ranalli, T. Martin, R.S. Balmer, D. J. Wallis	2007	33
4	Combined Infrared and Raman temperature measurements on device structures Bristol Research (University of Bristol) ·Andrei Sarua, Hangfeng Ji, Martin Kuball, Michael J. Uren, T. Martin, K.P. Hilton, R.S. Balmer	2006	5
5	Control of Short-Channel Effects in GaN/AlGaN HFETs ORCA Online Research @Cardiff (Cardiff University) ·Michael J. Uren, D.G. Hayes, R.S. Balmer, D. J. Wallis, K.P. Hilton, J.O. Maclean, Trevor Martin, Nandan Kumar, 郭润杰, J. Benedikt, P.J. Tasker	2006	28
6	Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements IEEE MTT-S International Microwave Symposium Digest, 2005. ·郭润杰, J. Benedikt, P.J. Tasker, Jeff Powell, K.P. Hilton, J. L. Glasper, R.S. Balmer, Trevor Martin, Michael J. Uren	2005	18
7	Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopy Applied Physics Letters ·清爾リピット・水田, Martin Kuball, D. J. Wallis, A.M. Keir, K.P. Hilton, R.S. Balmer, Michael J. Uren, Trevor Martin, P.J. Heard	2005	33
8	Composition measurement in strained AlGaN epitaxial layers using x-ray diffraction Applied Physics Letters ·D. J. Wallis, A.M. Keir, R.S. Balmer, N D Brusenina, Trevor Martin	2004	12
9	AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·R.S. Balmer, K.P. Hilton, Jessica Godfrey, Michael J. Uren, D. J. Wallis, Hou Zhaobin, M. Missous, T. Martin	2003	19
10	Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy Applied Physics Letters ·Martin Kuball, S. Rajasingam, Andrei Sarua, Michael J. Uren, T. Martin, B.T. Hughes, K.P. Hilton, R.S. Balmer	2003	152
11	Vertically tapered epilayers for low-loss waveguide-fiber coupling achieved in a single epitaxial growth run Journal of Lightwave Technology ·R.S. Balmer, J.M. Heaton, J.O. Maclean, S.G. Ayling, J. Newey, VISCOUNT MORLEY, P. D. J. Calcott, D.R. Wight, Trevor Martin	2003	7
12	Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs) Journal of Physics Condensed Matter ·D C Herbert, Michael J. Uren, B.T. Hughes, D.G. Hayes, J.C.H. Birbeck, R.S. Balmer, Trevor Martin, Theodor Gomperz, R. A. Abram, M. Walmsley, R A Davies, R.H. Wallis, W. A. Phillips, Sarah C. Jones	2002	13
13	GaN/AlGaN HFETs fabricated on a SiC substrate Michael J. Uren, Trevor Martin, J.C.H. Birbeck, R.S. Balmer, B.T. Hughes, 武跃平, 张超武, H.A. Willis, Huda Fadlall Ali Mohamed	2002	1
14	TEM Assessment of AuTiAlTi and AuPdAlTi Ohmic Contacts to AlGaN/GaN Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Michael W. Fay, I. Harrison, R.S. Balmer, B.T. Hughes, Michael J. Uren, Trevor Martin, Paul D. Brown	2002	2
15	Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry Journal of Crystal Growth ·R.S. Balmer, C. Pickering, 陈子安, Trevor Martin	2002	29
16	Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs MRS Proceedings ·Martin Kuball, S. Rajasingam, Andrei Sarua, Michael J. Uren, Trevor Martin, R.S. Balmer, K.P. Hilton	2002	1
17	Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs Journal of Crystal Growth ·Michael J. Uren, Akin Sagrili, B.T. Hughes, 知之山県, J.C.H. Birbeck, R.S. Balmer, Trevor Martin, R.H. Wallis, Stephen Jones	2001	9
18	RF Power performance of passivated ALGAN/GAN hfets grown on sic and sapphire AMS Acta (University of Bologna) ·H. Leier, A. Wieszt, R. Behtash, Xiaoxun Ma, Andrei Vescan, 宏司原田, Kariny Teixeira Cortelete, Suhui Guo, J.C.H. Birbeck, R.S. Balmer, T. Martin	2001	4
19	Self-Heating Effects in High-Power AlGaN/GaN HFETs MRS Proceedings ·Martin Kuball, Michael J. Uren, Joseph M. Hayes, T. Martin, J.C.H. Birbeck, R.S. Balmer, B.T. Hughes	2001	1
20	Back Bias Effects in AlGaN/GaN HFETs physica status solidi (a) ·Michael J. Uren, D C Herbert, T. Martin, B.T. Hughes, J.C.H. Birbeck, R.S. Balmer, 陈子安, Stephen Jones	2001	20

About R.S. Balmer

R.S. Balmer is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 53 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (43 papers), Semiconductor materials and devices (24 papers), Silicon Carbide Semiconductor Technologies (20 papers), Radio Frequency Integrated Circuit Design (10 papers), Metal and Thin Film Mechanics (8 papers), ZnO doping and properties (7 papers), Semiconductor Quantum Structures and Devices (5 papers) and Diamond and Carbon-based Materials Research (5 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electrical and Electronic Engineering (1.4k citations), Electronic, Optical and Magnetic Materials (401 citations), Atomic and Molecular Physics, and Optics (515 citations) and Materials Chemistry (691 citations). R.S. Balmer has collaborated with scholars based in United Kingdom, Germany and Sweden. Frequent co-authors include Michael J. Uren, Martin Kuball, T. Martin, K.P. Hilton, Trevor Martin, B.T. Hughes, Andrei Sarua, J.C.H. Birbeck, Inocencio R. Martín and Joseph M. Hayes. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, IEEE Electron Device Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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