S. S. Lau

2.6k total citations
53 papers, 2.2k citations indexed

About

S. S. Lau is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, S. S. Lau has authored 53 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 23 papers in Condensed Matter Physics. Recurrent topics in S. S. Lau's work include Semiconductor materials and devices (27 papers), GaN-based semiconductor devices and materials (23 papers) and Semiconductor materials and interfaces (17 papers). S. S. Lau is often cited by papers focused on Semiconductor materials and devices (27 papers), GaN-based semiconductor devices and materials (23 papers) and Semiconductor materials and interfaces (17 papers). S. S. Lau collaborates with scholars based in United States, Hong Kong and China. S. S. Lau's co-authors include D. Qiao, Edward T. Yu, P.M. Asbeck, G.J. Sullivan, Joan M. Redwing, L. S. Yu, X. Z. Dang, Chundong Wang, Q. Z. Liu and Xing Quan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Cancer Research.

In The Last Decade

S. S. Lau

52 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. S. Lau United States	19	1.7k	1.4k	855	772	517	53	2.2k
S. A. Nikishin United States	28	1.9k 1.1×	1.1k 0.8×	942 1.1×	810 1.0×	874 1.7×	117	2.5k
Tetsuo Fujii Japan	18	1.4k 0.8×	915 0.7×	811 0.9×	705 0.9×	1.1k 2.1×	35	2.2k
R. S. Kern United States	23	1.5k 0.9×	1.1k 0.8×	611 0.7×	608 0.8×	654 1.3×	56	2.0k
A. V. Govorkov Russia	32	2.0k 1.2×	1.3k 0.9×	553 0.6×	1.3k 1.7×	1.0k 1.9×	139	2.5k
K. S. Boutros United States	24	1.7k 1.0×	1.4k 1.0×	479 0.6×	705 0.9×	389 0.8×	67	2.0k
Stefan Degroote Belgium	25	1.3k 0.8×	1.3k 1.0×	693 0.8×	771 1.0×	524 1.0×	89	2.0k
Shunro Fuke Japan	22	1.3k 0.8×	902 0.7×	500 0.6×	977 1.3×	1.2k 2.4×	75	2.1k
Yik‐Khoon Ee United States	17	1.4k 0.8×	664 0.5×	776 0.9×	512 0.7×	787 1.5×	30	1.9k
E. J. Tarsa United States	17	1.8k 1.0×	980 0.7×	582 0.7×	1.1k 1.4×	1.2k 2.4×	31	2.4k
Atsushi Yamaguchi Japan	18	1.6k 0.9×	729 0.5×	716 0.8×	715 0.9×	801 1.5×	82	2.0k

Countries citing papers authored by S. S. Lau

Since Specialization

Citations

This map shows the geographic impact of S. S. Lau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. S. Lau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. S. Lau more than expected).

Fields of papers citing papers by S. S. Lau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. S. Lau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. S. Lau. The network helps show where S. S. Lau may publish in the future.

Co-authorship network of co-authors of S. S. Lau

This figure shows the co-authorship network connecting the top 25 collaborators of S. S. Lau. A scholar is included among the top collaborators of S. S. Lau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. S. Lau. S. S. Lau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lau, S. S., et al.. (2014). A study of ageing effect at elevated temperature of flexible silicon diodes integrated using conductive adhesives. Microelectronics Reliability. 54(5). 956–959. 1 indexed citations

Chen, Wayne, T. L. Alford, T. F. Kuech, & S. S. Lau. (2011). High electron mobility transistors on plastic flexible substrates. Applied Physics Letters. 98(20). 5 indexed citations

Chen, Wayne, et al.. (2010). High Quality InP Layers Transferred by Cleavage Plane Assisted Ion-Cutting. Electrochemical and Solid-State Letters. 13(8). H268–H268. 1 indexed citations

Chen, Peng, Paul K. Chu, T. Höchbauer, et al.. (2004). Plasma hydrogenation of strain-relaxed SiGe∕Si heterostructure for layer transfer. Applied Physics Letters. 85(21). 4944–4946. 5 indexed citations

Jerez-Hanckes, Carlos, D. Qiao, & S. S. Lau. (2002). A study of Si wafer bonding via methanol capillarity. Materials Chemistry and Physics. 77(3). 751–754. 5 indexed citations

Yu, Edward T., X. Z. Dang, L. S. Yu, et al.. (2002). Piezoelectric enhancement of Schottky barrier heights in GaN-AlGaN HFET structures. 116–117. 1 indexed citations

Zhao, Yuji, et al.. (1998). Effects of arsenic in gas-source molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1297–1299. 25 indexed citations

Yu, L. S., Xing Quan, D. Qiao, et al.. (1998). Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure. Applied Physics Letters. 73(26). 3917–3919. 47 indexed citations

Ruvimov, S., Z. Liliental‐Weber, J. Washburn, et al.. (1998). Microstructure of Ti/Al ohmic contacts for n-AlGaN. Applied Physics Letters. 73(18). 2582–2584. 109 indexed citations

10.

Yu, L. S., Q. Z. Liu, Xing Quan, et al.. (1998). The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes. Journal of Applied Physics. 84(4). 2099–2104. 172 indexed citations

11.

Asbeck, P.M., et al.. (1997). Piezoelectric charge densities in AlGaN/GaN HFETs. Electronics Letters. 33(14). 1230–1231. 230 indexed citations

12.

Liu, Q. Z., L. S. Yu, F. Deng, et al.. (1997). Study of contact formation in AlGaN/GaN heterostructures. Applied Physics Letters. 71(12). 1658–1660. 58 indexed citations

13.

Alford, T. L., et al.. (1997). Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambient. Journal of Applied Physics. 82(7). 3321–3327. 14 indexed citations

14.

Yu, Edward T., et al.. (1996). On the Epitaxy of Metal Films on GaN. MRS Proceedings. 449. 5 indexed citations

15.

Alford, T. L., et al.. (1996). Encapsulation of Silver Via Nitridation of Ag/Ti Bilayer Structures. MRS Proceedings. 427. 4 indexed citations

16.

Wong, William S., F. Deng, S. S. Lau, et al.. (1996). Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals. Journal of Crystal Growth. 164(1-4). 159–166. 18 indexed citations

17.

Bi, Wengang, et al.. (1995). High resolution x-ray diffraction studies of AlGaP grown by gas-source molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 754–757. 15 indexed citations

18.

Fang, Fei, et al.. (1991). Contact Metallization for GaAs - A Report on the Development of a Non-Alloyed Ohmic Contact Scheme. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 59. 111–128. 3 indexed citations

19.

Tseng, W. F., J. Comas, B. Steiner, et al.. (1991). Growth and Characterization of Ternary and Quaternary Compounds of In_y (Al_xGa_1−x)_1-yAs on (100) InP. MRS Proceedings. 240. 1 indexed citations

20.

Scott, D. M., et al.. (1985). The Effects of Ion Beam Etching on Si, Ge, GaAs , and InP Schottky Barrier Diodes. Journal of The Electrochemical Society. 132(4). 918–922. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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