B. Brar

2.5k total citations
100 papers, 1.9k citations indexed

About

B. Brar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, B. Brar has authored 100 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 73 papers in Atomic and Molecular Physics, and Optics and 15 papers in Condensed Matter Physics. Recurrent topics in B. Brar's work include Semiconductor Quantum Structures and Devices (63 papers), Radio Frequency Integrated Circuit Design (29 papers) and Advanced Semiconductor Detectors and Materials (26 papers). B. Brar is often cited by papers focused on Semiconductor Quantum Structures and Devices (63 papers), Radio Frequency Integrated Circuit Design (29 papers) and Advanced Semiconductor Detectors and Materials (26 papers). B. Brar collaborates with scholars based in United States, Germany and France. B. Brar's co-authors include H. Kroemer, Alan Seabaugh, G. D. Wilk, Chanh Nguyen, M.J.W. Rodwell, John H. English, Minh Vuong Le, Jesús A. del Alamo, Miguel Urteaga and C. Nguyen and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B. Brar

97 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. Brar United States	24	1.6k	1.3k	431	250	197	100	1.9k
Thomas Adam United States	20	1.2k 0.7×	637 0.5×	275 0.6×	86 0.3×	212 1.1×	87	1.5k
K. Heime Germany	18	1.2k 0.7×	1.1k 0.8×	382 0.9×	362 1.4×	141 0.7×	171	1.5k
J. M. Ballingall United States	23	1.6k 1.0×	1.2k 0.9×	289 0.7×	225 0.9×	119 0.6×	85	1.8k
D. R. Leadley United Kingdom	25	1.5k 0.9×	1.7k 1.3×	374 0.9×	463 1.9×	310 1.6×	161	2.3k
K. J. Moore Finland	23	1.3k 0.8×	2.1k 1.6×	731 1.7×	320 1.3×	150 0.8×	64	2.3k
Toshiro Isu Japan	23	1.3k 0.8×	1.6k 1.2×	442 1.0×	212 0.8×	246 1.2×	168	2.0k
W. Kopp United States	26	1.9k 1.2×	1.7k 1.3×	214 0.5×	313 1.3×	149 0.8×	89	2.2k
P. Frijlink France	18	812 0.5×	700 0.5×	185 0.4×	290 1.2×	80 0.4×	46	1.1k
S. N. Danilov Germany	21	841 0.5×	1.4k 1.1×	490 1.1×	252 1.0×	104 0.5×	100	1.7k
B. R. Nag India	22	1.2k 0.7×	1.4k 1.1×	455 1.1×	274 1.1×	153 0.8×	196	1.9k

Countries citing papers authored by B. Brar

Since Specialization

Citations

This map shows the geographic impact of B. Brar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Brar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Brar more than expected).

Fields of papers citing papers by B. Brar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Brar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Brar. The network helps show where B. Brar may publish in the future.

Co-authorship network of co-authors of B. Brar

This figure shows the co-authorship network connecting the top 25 collaborators of B. Brar. A scholar is included among the top collaborators of B. Brar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Brar. B. Brar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Asbeck, P.M. & B. Brar. (2024). Herbert Kroemer: Electron Devices Legend. 2(2). 8–10.

Shinohara, K., J. Bergman, Miguel Urteaga, et al.. (2019). GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers. 1133–1135. 22 indexed citations

Shinohara, K., et al.. (2018). GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas. IEEE Electron Device Letters. 39(3). 417–420. 32 indexed citations

Kim, Dae-Hyun, et al.. (2010). 50-nm E-mode In[subscript 0.7]Ga[subscript 0.3]As PHEMTs on 100-mm InP substrate with f[subscript max] > 1 THz. 1 indexed citations

Field, Mark, Robert Borwick, Vivek Mehrotra, et al.. (2010). 1.3: 220 GHz 50 W sheet beam travelling wave tube amplifier. 21–22. 6 indexed citations

Grant, T.J., et al.. (2010). 8.3: A high aspect ratio, high current density sheet beam electron gun. 97–98. 15 indexed citations

Yang, Nancy, Mayank T. Bulsara, Eugene A. Fitzgerald, et al.. (2009). Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration. DSpace@MIT (Massachusetts Institute of Technology). 1–2. 3 indexed citations

Kazior, T.E., Amy Liu, Dmitri Loubychev, et al.. (2008). Direct Growth of III-V Devices on Silicon. MRS Proceedings. 1068. 1 indexed citations

Rodwell, M.J.W., Minh Vuong Le, & B. Brar. (2008). InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies. Proceedings of the IEEE. 96(2). 271–286. 101 indexed citations

10.

Kazemi, Hooman, C. Nguyen, B. Brar, et al.. (2008). Low cost modular integrated horn antenna array using heterojunction barrier diode detectors. Journal of Bioresource Management. 297–300. 14 indexed citations

11.

Urteaga, Miguel, K. Shinohara, R.L. Pierson, et al.. (2006). InP DHBT IC Technology with Implanted Collector Pedestal and Electroplated Device Contacts. 187–190. 3 indexed citations

12.

Brar, B., Gerard Sullivan, & P.M. Asbeck. (2001). Herb's bipolar transistors. IEEE Transactions on Electron Devices. 48(11). 2473–2476. 3 indexed citations

13.

Brar, B. & H. Kroemer. (1998). Hole transport across the (Al,Ga)(As,Sb) barrier in InAs–(Al,Ga)(As,Sb) heterostructures. Journal of Applied Physics. 83(2). 894–899. 12 indexed citations

14.

Brar, B., G. D. Wilk, & Alan Seabaugh. (1996). Direct extraction of the electron tunneling effective mass in ultrathin SiO2. Applied Physics Letters. 69(18). 2728–2730. 234 indexed citations

15.

Jenichen, B., S. A. Stepanov, B. Brar, & H. Kroemer. (1996). Interface roughness of InAs/AlSb superlattices investigated by x-ray scattering. Journal of Applied Physics. 79(1). 120–124. 30 indexed citations

16.

Sun, Chi‐Kuang, John E. Bowers, B. Brar, et al.. (1996). Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots. Applied Physics Letters. 68(11). 1543–1545. 135 indexed citations

17.

Warburton, Richard J., C. Gauer, A. Wixforth, et al.. (1996). Collective effects in the intersubband resonance of InAs/AlSb quantum wells. Superlattices and Microstructures. 19(4). 365–374. 12 indexed citations

18.

Brar, B. & H. Kroemer. (1995). Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors. IEEE Electron Device Letters. 16(12). 548–550. 61 indexed citations

19.

Gauer, C., A. Wixforth, J. P. Kotthaus, et al.. (1995). Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells. Physical Review Letters. 74(14). 2772–2775. 13 indexed citations

20.

Brar, B. & D. Leonard. (1995). Spiral growth of GaSb on (001) GaAs using molecular beam epitaxy. Applied Physics Letters. 66(4). 463–465. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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