C.S. Whelan

655 citations

35 papers · 481 indexed · h-index 14

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 25
Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design 16
- Semiconductor materials and devices 13
- Semiconductor Lasers and Optical Devices 10
- Microwave Engineering and Waveguides 7
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 5
Biomedical Engineering
- Nanowire Synthesis and Applications 3
Surfaces, Coatings and Films
- Optical Coatings and Gratings 3

Co-authors: P.F. Marsh W. E. Hoke T.E. Kazior David L. Allara Michael J. Lercel Kannan Seshadri R.E. Leoni P. S. Lyman
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Journal of Crystal Growth (2 papers)IEEE Electron Device Letters (2 papers)Applied Physics Letters (1 paper)
Partner nations: United States

In The Last Decade

C.S. Whelan

34 papers receiving 430 citations

Peers

Countries citing papers authored by C.S. Whelan

Since Specialization

Citations

This map shows the geographic impact of C.S. Whelan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.S. Whelan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.S. Whelan more than expected).

Fields of papers citing papers by C.S. Whelan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.S. Whelan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.S. Whelan. The network helps show where C.S. Whelan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C.S. Whelan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C.S. Whelan Line = papers co-authored together C.S. Whelan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	GaN technology for microwave and millimeter wave applications 2010 IEEE MTT-S International Microwave Symposium ·Hyo Teak Song,C.S. Whelan,Ladislav Hložný,S. Otman	2010	8
2	GaN technology for microwave and millimeter wave applications 2010 IEEE MTT-S International Microwave Symposium ·C Bellavere,C.S. Whelan,T.E. Kazior,S. Otman	2010	9
3	W-band metamorphic HEMT with 267 mW output power IEEE MTT-S International Microwave Symposium Digest, 2005. ·K.J. Herrick,Ken Brown,Ananthapadmanab Sivaramakrishnan,C.S. Whelan,Syafarinah Nur Hidayah Akil,J. R. LaRoche,Yiwen Zhang	2005	13
4	Material properties and performance of metamorphic optoelectronic integrated circuits grown by molecular beam epitaxy on GaAs substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,Pengyang wang,C.S. Whelan,敏克井上,A. Torabi,P.F. Marsh,T. Vorotnikova,Chao Xu,K. C. Hsieh	2004	8
5	95 GHz metamorphic HEMT power amplifiers on GaAs K.J. Herrick,S.M. Lardizabal,P.F. Marsh,C.S. Whelan	2003	9
6	High indium metamorphic HEMT on a GaAs substrate Journal of Crystal Growth ·W. E. Hoke,敏克井上,A. Torabi,C.S. Whelan,P.F. Marsh,R. Leoni,Chao Xu,K. C. Hsieh	2003	35
7	40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology IEEE Electron Device Letters ·Walter Fonseca-Araujo,C.S. Whelan,R.E. Leoni,P.F. Marsh,W. E. Hoke,曾印泉,Eric Rafael Oliveira,T.E. Kazior	2003	11
8	Properties of metamorphic materials and device structures on GaAs substrates Journal of Crystal Growth ·W. E. Hoke,敏克井上,A. Torabi,C.S. Whelan,P.F. Marsh,R. Leoni,S.M. Lardizabal,Walter Fonseca-Araujo,Jae‐Hyung Jang,I. Adesida,Chao Xu,K. C. Hsieh	2003	23
9	High indium metamorphic HEMT on a GaAs substrate W. E. Hoke,敏克井上,A. Torabi,C.S. Whelan,P.F. Marsh,R. Leoni,Chao Xu,K. C. Hsieh	2003	2
10	Low noise metamorphic HEMT devices and amplifiers on GaAs substrates P.F. Marsh,R. Costes,S.M. Lardizabal,R.E. Leoni,Marisa Roberto Rossana Scuri,R. Wohlert,О. (Ойбек) Нарзуллоев,W. E. Hoke,Shaxina Jabborova,C.S. Whelan,P. J. Lemonias,慶太郎前田,T.E. Kazior	2003	9
11	GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications C.S. Whelan,P.F. Marsh,W. E. Hoke,Shaxina Jabborova,Christopher Jude McCarroll,T.E. Kazior	2002	22
12	Reliability of metamorphic HEMTs on GaAs substrates Microelectronics Reliability ·P.F. Marsh,C.S. Whelan,W. E. Hoke,R.E. Leoni,T.E. Kazior	2002	17
13	Reliability of metamorphic HEMTs on GaAs substrates P.F. Marsh,C.S. Whelan,W. E. Hoke,R.E. Leoni,Tera Noviantiningtyas Ripto Saputri	2001	4
14	Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·D. Lubyshev,Sung Hwan Joo,T. Stewart,A. Cornfeld,X. M. Fang,Каро-Гонсалес Антония,P. Specht,C. Kisielowski,Yulia Rahma Rahma Auliya,Mark S. Goorsky,C.S. Whelan,W. E. Hoke,P.F. Marsh,J. Mirecki Millunchick,Stefan P. Svensson	2001	17
15	A comparison of channel indium content in low noise metamorphic HEMTs with In/sub x/Ga/sub 1-x/As (0.3<X⩽0.6) C.S. Whelan,S.M. Lardizabal,Antika Putri Andini,W. E. Hoke,P.F. Marsh,Shaxina Jabborova,Christopher Jude McCarroll,T.E. Kazior	2000	4
16	Growth and characterization of metamorphic Inx(AlGa)1−xAs/InxGa1−xAs high electron mobility transistor material and devices with X=0.3–0.4 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. S. Lyman,C.S. Whelan,Zhang Hengfeng,A. Torabi,Roger Nye Lincoln,K. C. Hsieh	2000	29
17	Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density IEEE Electron Device Letters ·C.S. Whelan,Chengmeng Liu,Shaxina Jabborova,A. W. Church,P. S. Lyman,P.F. Marsh,T.E. Kazior	2000	39
18	Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates AMS Acta (University of Bologna) ·C.S. Whelan,P.F. Marsh,(unknown),W. E. Hoke,Shaxina Jabborova,T.E. Kazior	2000	0
19	High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·D. W. Carr,Michael J. Lercel,C.S. Whelan,H. G. Craighead,Kannan Seshadri,David L. Allara	1997	33
20	Improved electron-beam patterning of Si with self-assembled monolayers Applied Physics Letters ·C.S. Whelan,Michael J. Lercel,H. G. Craighead,Kannan Seshadri,David L. Allara	1996	28

About C.S. Whelan

C.S. Whelan is a scholar working on Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films and Electrical and Electronic Engineering, having authored 35 papers that have together received 481 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (25 papers), Radio Frequency Integrated Circuit Design (16 papers), Semiconductor materials and devices (13 papers), Semiconductor Lasers and Optical Devices (10 papers), Microwave Engineering and Waveguides (7 papers), GaN-based semiconductor devices and materials (5 papers), Nanowire Synthesis and Applications (3 papers) and Optical Coatings and Gratings (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (283 citations), Electrical and Electronic Engineering (443 citations) and Condensed Matter Physics (76 citations). C.S. Whelan has collaborated with scholars based in United States. Frequent co-authors include P.F. Marsh, W. E. Hoke, T.E. Kazior, David L. Allara, Michael J. Lercel, Kannan Seshadri, R.E. Leoni, P. S. Lyman, A. Torabi and H. G. Craighead. Their work appears in journals such as Journal of Crystal Growth, IEEE Electron Device Letters, Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

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