C.S. Whelan

655 total citations
35 papers, 481 citations indexed

About

C.S. Whelan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C.S. Whelan has authored 35 papers receiving a total of 481 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in C.S. Whelan's work include Semiconductor Quantum Structures and Devices (25 papers), Radio Frequency Integrated Circuit Design (16 papers) and Semiconductor materials and devices (13 papers). C.S. Whelan is often cited by papers focused on Semiconductor Quantum Structures and Devices (25 papers), Radio Frequency Integrated Circuit Design (16 papers) and Semiconductor materials and devices (13 papers). C.S. Whelan collaborates with scholars based in United States. C.S. Whelan's co-authors include P.F. Marsh, W. E. Hoke, T.E. Kazior, David L. Allara, Kannan Seshadri, Michael J. Lercel, R.E. Leoni, P. S. Lyman, A. Torabi and H. G. Craighead and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

C.S. Whelan

34 papers receiving 430 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.S. Whelan United States 14 443 283 120 76 43 35 481
G. DeSalvo United States 10 404 0.9× 204 0.7× 104 0.9× 52 0.7× 80 1.9× 35 452
W. Ha United States 10 401 0.9× 305 1.1× 83 0.7× 85 1.1× 24 0.6× 23 444
T. Maier Germany 8 230 0.5× 196 0.7× 85 0.7× 93 1.2× 46 1.1× 19 371
T. Ishii Japan 13 554 1.3× 236 0.8× 115 1.0× 27 0.4× 34 0.8× 34 624
Akihiro Moto Japan 13 274 0.6× 253 0.9× 58 0.5× 220 2.9× 75 1.7× 37 406
N. T. Cherpak Ukraine 13 361 0.8× 244 0.9× 298 2.5× 185 2.4× 62 1.4× 105 557
Toshiyuki Takizawa Japan 10 252 0.6× 185 0.7× 98 0.8× 179 2.4× 156 3.6× 23 391
H. Rasooli Saghai Iran 12 245 0.6× 246 0.9× 80 0.7× 52 0.7× 71 1.7× 45 404
Kashif M. Awan Canada 12 263 0.6× 163 0.6× 110 0.9× 27 0.4× 128 3.0× 35 387
H. Thomas United Kingdom 12 358 0.8× 275 1.0× 32 0.3× 96 1.3× 65 1.5× 46 411

Countries citing papers authored by C.S. Whelan

Since Specialization
Citations

This map shows the geographic impact of C.S. Whelan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.S. Whelan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.S. Whelan more than expected).

Fields of papers citing papers by C.S. Whelan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.S. Whelan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.S. Whelan. The network helps show where C.S. Whelan may publish in the future.

Co-authorship network of co-authors of C.S. Whelan

This figure shows the co-authorship network connecting the top 25 collaborators of C.S. Whelan. A scholar is included among the top collaborators of C.S. Whelan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.S. Whelan. C.S. Whelan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Whelan, C.S., et al.. (2010). GaN technology for microwave and millimeter wave applications. 2010 IEEE MTT-S International Microwave Symposium. 1–1. 8 indexed citations
2.
Whelan, C.S., et al.. (2010). GaN technology for microwave and millimeter wave applications. 2010 IEEE MTT-S International Microwave Symposium. 1222–1225. 9 indexed citations
3.
Herrick, K.J., et al.. (2005). W-band metamorphic HEMT with 267 mW output power. IEEE MTT-S International Microwave Symposium Digest, 2005.. 843–846. 13 indexed citations
4.
Hoke, W. E., A. Torabi, C.S. Whelan, et al.. (2003). High indium metamorphic HEMT on a GaAs substrate. Journal of Crystal Growth. 251(1-4). 827–831. 35 indexed citations
5.
Whelan, C.S., et al.. (2003). 40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology. IEEE Electron Device Letters. 24(9). 529–531. 11 indexed citations
6.
Herrick, K.J., S.M. Lardizabal, P.F. Marsh, & C.S. Whelan. (2003). 95 GHz metamorphic HEMT power amplifiers on GaAs. 1. 137–140. 9 indexed citations
7.
Hoke, W. E., A. Torabi, C.S. Whelan, et al.. (2003). High indium metamorphic HEMT on a GaAs substrate. 73–74. 2 indexed citations
8.
Hoke, W. E., A. Torabi, C.S. Whelan, et al.. (2003). Properties of metamorphic materials and device structures on GaAs substrates. Journal of Crystal Growth. 251(1-4). 804–810. 23 indexed citations
9.
Qiao, Jinli, et al.. (2003). The development of microwave systems to reduce diesel exhaust emissions. ORCA Online Research @Cardiff. 1 indexed citations
10.
Hoke, W. E., A. Torabi, C.S. Whelan, et al.. (2003). Properties of metamorphic materials and device structures on GaAs substrates. 69–70. 2 indexed citations
12.
Whelan, C.S., P.F. Marsh, R.E. Leoni, et al.. (2002). Metamorphic PIN photodiodes for the 40 Gb/s fiber market. 251–254. 4 indexed citations
13.
Hoke, W. E., R. Leoni, C.S. Whelan, et al.. (2002). High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(3). 1209–1212. 5 indexed citations
14.
Marsh, P.F., C.S. Whelan, W. E. Hoke, R.E. Leoni, & T.E. Kazior. (2002). Reliability of metamorphic HEMTs on GaAs substrates. Microelectronics Reliability. 42(7). 997–1002. 17 indexed citations
15.
Leoni, R.E., James G. Hunt, C.S. Whelan, et al.. (2002). A DC-45 GHz metamorphic HEMT traveling wave amplifier. 133–136. 13 indexed citations
16.
Laskar, J., et al.. (2001). K-band receiver front-ends in a GaAs metamorphic HEMT process. IEEE Transactions on Microwave Theory and Techniques. 49(12). 2459–2463. 17 indexed citations
17.
Lubyshev, D., T. Stewart, A. Cornfeld, et al.. (2001). Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1510–1514. 17 indexed citations
19.
Whelan, C.S., W. E. Hoke, S.M. Lardizabal, et al.. (2000). Low Noise In 0.32 (AlGa) 0.68 As/In 0.43 Ga 0.57 As Metamorphic HEMT on GaAs Substrate with 850 mW/mm Output Power Density. 9 indexed citations
20.
Whelan, C.S., Michael J. Lercel, H. G. Craighead, Kannan Seshadri, & David L. Allara. (1996). Improved electron-beam patterning of Si with self-assembled monolayers. Applied Physics Letters. 69(27). 4245–4247. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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