J. Łagowski

6.6k total citations
229 papers, 5.2k citations indexed

About

J. Łagowski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Łagowski has authored 229 papers receiving a total of 5.2k indexed citations (citations by other indexed papers that have themselves been cited), including 204 papers in Electrical and Electronic Engineering, 96 papers in Atomic and Molecular Physics, and Optics and 58 papers in Materials Chemistry. Recurrent topics in J. Łagowski's work include Semiconductor materials and devices (84 papers), Silicon and Solar Cell Technologies (75 papers) and Semiconductor materials and interfaces (56 papers). J. Łagowski is often cited by papers focused on Semiconductor materials and devices (84 papers), Silicon and Solar Cell Technologies (75 papers) and Semiconductor materials and interfaces (56 papers). J. Łagowski collaborates with scholars based in United States, Poland and Germany. J. Łagowski's co-authors include H. C. Gatos, W. Walukiewicz, L. Jastrzȩbski, J. M. Parsey, M. Kamińska, Harry E. Ruda, Marek Skowroński, M. Lichtensteiger, Piotr Edelman and E.S. Sproles and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Łagowski

213 papers receiving 4.8k citations

Peers

Countries citing papers authored by J. Łagowski

Since Specialization

Citations

This map shows the geographic impact of J. Łagowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Łagowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Łagowski more than expected).

Fields of papers citing papers by J. Łagowski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Łagowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Łagowski. The network helps show where J. Łagowski may publish in the future.

Co-authorship network of co-authors of J. Łagowski

This figure shows the co-authorship network connecting the top 25 collaborators of J. Łagowski. A scholar is included among the top collaborators of J. Łagowski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Łagowski. J. Łagowski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Non-Contact Full Wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data 2025 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), Robin Karhu, (unknown), G. Polisski, Marshall Wilson, (unknown), (unknown), Carlos Almeida, Dmitriy Marinskiy, J. Łagowski	0
2	Recent Progress in Non-Contact Electrical Characterization for SiC and Related Compounds 2023 ·Materials science forum ·(unknown), Marshall Wilson, Dmitriy Marinskiy, (unknown), Carlos Almeida, J. Łagowski	2
3	Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers 2023 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), (unknown), Edward Sanchez, (unknown), Marshall Wilson, Dmitriy Marinskiy, J. Łagowski	2
4	Review—Recent Advancement in Charge- and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT 2017 ·ECS Journal of Solid State Science and Technology ·Marshall Wilson, (unknown), (unknown), John D’Amico, (unknown), Fumimasa Horikiri, J. Łagowski	9
5	Non-Visual Defect Monitoring with Surface Voltage Mapping: Application for Semiconductor IC and PV Technology 2015 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Piotr Edelman, Dmitriy Marinskiy, (unknown), John D’Amico, (unknown), Marshall Wilson, Carlos Almeida, J. Łagowski	1
6	Application of Non-contact Corona-Kelvin metrology for Characterization of Plasma Nitrided SiO[sub 2] 2007 ·AIP conference proceedings ·A. E. Belyaev, Dmitriy Marinskiy, (unknown), John D’Amico, L. Jastrzȩbski, J. Łagowski, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Daniel Herr, Rajinder P. Khosla, Erik M. Secula	0
7	Infrared photoluminescence from Er doped porous Si 2000 ·Journal of Applied Physics ·Worth B. Henley, Yaroslav Koshka, J. Łagowski, J. Siejka	24
8	A New, Real-Time Method for Measuring Mobile Charge and Injected Charge in SiO₂ on Si 1996 ·MRS Proceedings ·Piotr Edelman, J. Łagowski, (unknown), Andrew Hoff, L. Jastrzȩbski, Eric Persson	1
9	Enhanced hydrogenation in polycrystalline silicon thin films using low-temperature ultrasound treatment 1996 ·Applied Physics Letters ·S. Ostapenko, L. Jastrzȩbski, J. Łagowski, (unknown)	13
10	Large photoinduced persistent optical absorption in selenium doped AlSb 1995 ·Applied Physics Letters ·P. Becla, A. F. Witt, J. Łagowski, W. Walukiewicz	12
11	Non-contact deep level transient spectroscopy (DLTS) based on surface photovoltage 1992 ·Semiconductor Science and Technology ·J. Łagowski, Piotr Edelman, A. Morawski	11
12	Non-Contact, Wafer-Scale Deep Level Transient Spectroscopy (DLTS) Based on Surface Photovoltage (SPV) 1991 ·MRS Proceedings ·J. Łagowski, A. Morawski, Piotr Edelman	1
13	Optical and electronic properties of vanadium in gallium arsenide 1987 ·Journal of Applied Physics ·A. M. Hennel, C.D. Brandt, (unknown), J. Łagowski, H. C. Gatos	27
14	Inverted thermal conversion—GaAs, a new alternative material for integrated circuits 1986 ·Applied Physics Letters ·J. Łagowski, H. C. Gatos, (unknown), Marek Skowroński, (unknown), (unknown)	65
15	Nonstoichiometric defects in GaAs and the EL2 bandwagon 1985 ·NASA STI/Recon Technical Report A ·J. Łagowski, H. C. Gatos	1
16	High Resolution Optical Study of The Antisite Defect AS_Ga in GaAs; Correlation with Midgap Level EL2 1985 ·MRS Proceedings ·Marek Skowroński, (unknown), J. Łagowski, L. M. Pawlowicz, (unknown), H. C. Gatos	1
17	Oxygen in GaAs - Direct and indirect effects 1984 ·NASA STI/Recon Technical Report A ·H. C. Gatos, Marek Skowroński, L. M. Pawlowicz, J. Łagowski	1
18	Intracenter transitions in the dominant deep level (EL2) in GaAs 1983 ·Applied Physics Letters ·M. Kamińska, Marek Skowroński, J. Łagowski, J. M. Parsey, H. C. Gatos	163
19	Relationship between crystallinity and electronic properties of silicon-on-sapphire 1982 ·Journal of Crystal Growth ·L. Jastrzȩbski, M. T. Duffy, J. F. Corboy, G. W. Cullen, J. Łagowski	4
20	Determination of surface state parameters from surface photovoltage transients 1977 ·Surface Science ·(unknown), J. Łagowski, H. C. Gatos	26

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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