Frank Brunner

2.9k total citations
135 papers, 2.5k citations indexed

About

Frank Brunner is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Frank Brunner has authored 135 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 115 papers in Condensed Matter Physics, 86 papers in Electrical and Electronic Engineering and 59 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Frank Brunner's work include GaN-based semiconductor devices and materials (115 papers), Ga2O3 and related materials (59 papers) and Semiconductor materials and devices (47 papers). Frank Brunner is often cited by papers focused on GaN-based semiconductor devices and materials (115 papers), Ga2O3 and related materials (59 papers) and Semiconductor materials and devices (47 papers). Frank Brunner collaborates with scholars based in Germany, Slovakia and Austria. Frank Brunner's co-authors include Joachim Würfl, Eldad Bahat‐Treidel, Oliver Hilt, M. Weyers, A. Knauer, G. Tränkle, Michael Kneissl, U. Zeimer, Rimma Zhytnytska and Anna Mogilatenko and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry C.

In The Last Decade

Frank Brunner

126 papers receiving 2.4k citations

Peers

Countries citing papers authored by Frank Brunner

Since Specialization

Citations

This map shows the geographic impact of Frank Brunner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Frank Brunner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Frank Brunner more than expected).

Fields of papers citing papers by Frank Brunner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Frank Brunner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Frank Brunner. The network helps show where Frank Brunner may publish in the future.

Co-authorship network of co-authors of Frank Brunner

This figure shows the co-authorship network connecting the top 25 collaborators of Frank Brunner. A scholar is included among the top collaborators of Frank Brunner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Frank Brunner. Frank Brunner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Plasma enhanced atomic layer deposition of HfO2—A potential gate dielectric for GaN-based devices 2025 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), (unknown), (unknown), Eldad Bahat‐Treidel, Frank Brunner, Anna Mogilatenko, (unknown), Jos E. Boschker, Oliver Hilt, Olaf Krüger	0
2	Investigation of atomic layer deposition methods of Al2O3 on n-GaN 2024 ·Journal of Applied Physics ·(unknown), (unknown), Eldad Bahat‐Treidel, (unknown), Paul Plate, (unknown), Frank Brunner, Christophe Detavernier, Joachim Würfl, Oliver Hilt	6
3	Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration 2024 ·IEEE Transactions on Power Electronics ·(unknown), (unknown), (unknown), (unknown), Frank Brunner, Joachim Würfl, Oliver Hilt, Sibylle Dieckerhoff	2
4	GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices 2024 ·physica status solidi (RRL) - Rapid Research Letters ·Frank Brunner, (unknown), Eldad Bahat‐Treidel, Oliver Hilt, M. Weyers	3
5	K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm⁻¹ Extrinsic Transconductance 2024 ·physica status solidi (a) ·(unknown), (unknown), Frank Brunner, (unknown), Joachim Würfl, Matthias Rudolph, W. Heinrich, Oliver Hilt	0
6	Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al₂O₃/GaN MOS Capacitors 2023 ·IEEE Transactions on Electron Devices ·Nicolò Zagni, (unknown), G. Verzellesi, (unknown), Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat‐Treidel, (unknown), Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan	8
7	Analysis of Mechanical Strain in AlGaN/GaN HFETs 2022 ·physica status solidi (a) ·(unknown), Andreas Graff, (unknown), Frank Altmann, Frank Brunner, (unknown), Serguei Chevtchenko, Joachim Würfl	5
8	Au‐Free Ohmic Contact for GaN High‐Electron‐Mobility Transistors 2022 ·physica status solidi (a) ·(unknown), Serguei Chevtchenko, Frank Brunner, G. Tränkle, Joachim Würfl	5
9	High-temperature annealing of AlN films grown on 4H–SiC 2020 ·AIP Advances ·Frank Brunner, (unknown), Sylvia Hagedorn, M. Albrecht, M. Weyers	9
10	Degradation of AlGaN-based metal-semiconductor-metal photodetectors 2019 ·Japanese Journal of Applied Physics ·Moritz Brendel, Sylvia Hagedorn, Frank Brunner, (unknown), U. Zeimer, M. Weyers	12
11	On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry 2017 ·Journal of Applied Physics ·Moritz Brendel, Frank Brunner, M. Weyers	4
12	Development of semipolar (11-22) LEDs on GaN templates 2016 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Brian Corbett, (unknown), Duc V. Dinh, Grzegorz Kozłowski, Denis O’Mahony, Mahbub Akhter, Stefan Schulz, P. J. Parbrook, Pleun Maaskant, (unknown), (unknown), K. Thonke, F. Scholz, Markus Pristovsek, Yisong Han, C. J. Humphreys, Frank Brunner, M. Weyers, Tobias Meyer, L. Lymperakis	11
13	High-voltage normally OFF GaN power transistors on SiC and Si substrates 2015 ·MRS Bulletin ·Oliver Hilt, Eldad Bahat‐Treidel, A. Knauer, Frank Brunner, Rimma Zhytnytska, Joachim Würfl	30
14	Semipolar (112) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates 2015 ·physica status solidi (a) ·Duc V. Dinh, Mahbub Akhter, (unknown), Grzegorz Kozłowski, (unknown), Pleun Maaskant, Frank Brunner, (unknown), M. Weyers, F. Scholz, Brian Corbett, P. J. Parbrook	18
15	Self-Heating in GaN Transistors Designed for High-Power Operation 2014 ·IEEE Transactions on Electron Devices ·J. Kuzmı́k, M. Ťapajna, (unknown), (unknown), D. Donoval, Clément Fleury, D. Pogány, G. Strasser, Oliver Hilt, Frank Brunner, Joachim Würfl	46
16	Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer 2011 ·Oliver Hilt, Frank Brunner, (unknown), A. Knauer, Eldad Bahat‐Treidel, Joachim Würfl	100
17	Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer 2010 ·Oliver Hilt, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, Joachim Würfl	47
18	Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer 2010 ·Oliver Hilt, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, Joachim Würfl	62
19	Irradiation effects on AlGaN HFET devices and GaN layers 2008 ·Journal of Materials Science Materials in Electronics ·(unknown), E. Richter, Frank Brunner, A. Denker, R. Lossy, (unknown), (unknown), (unknown), Gerhard Pensl, J. Schmidt, U. Zeimer, (unknown), K. Baskar, M. Weyers, (unknown), G. Tränkle	1
20	Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations 2007 ·Journal of Crystal Growth ·Carsten Netzel, Tim Wernicke, U. Zeimer, Frank Brunner, M. Weyers, Michael Kneissl	14

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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