V. Kumar

2.3k total citations
66 papers, 1.9k citations indexed

About

V. Kumar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, V. Kumar has authored 66 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Condensed Matter Physics, 51 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in V. Kumar's work include GaN-based semiconductor devices and materials (62 papers), Radio Frequency Integrated Circuit Design (25 papers) and Semiconductor materials and devices (21 papers). V. Kumar is often cited by papers focused on GaN-based semiconductor devices and materials (62 papers), Radio Frequency Integrated Circuit Design (25 papers) and Semiconductor materials and devices (21 papers). V. Kumar collaborates with scholars based in United States, South Korea and India. V. Kumar's co-authors include I. Adesida, R. Schwindt, A. Kuliev, Wu Lu, D. Selvanathan, E. L. Piner, Farid Khan, G. Simin, J. Yang and M. Asif Khan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

V. Kumar

66 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Kumar United States 23 1.6k 1.3k 598 541 351 66 1.9k
V. Dmitriev United States 23 1.4k 0.9× 1.2k 0.9× 729 1.2× 500 0.9× 658 1.9× 147 2.0k
T.E. Kazior United States 17 1.9k 1.2× 2.0k 1.5× 657 1.1× 808 1.5× 475 1.4× 72 2.6k
Z. Bougrioua France 24 1.2k 0.8× 770 0.6× 604 1.0× 542 1.0× 797 2.3× 100 1.7k
Frank Brunner Germany 28 2.2k 1.4× 1.5k 1.1× 1.2k 2.0× 444 0.8× 704 2.0× 135 2.5k
J. Gillespie United States 25 1.4k 0.9× 1.2k 0.9× 584 1.0× 320 0.6× 399 1.1× 79 1.7k
Masaaki Kuzuhara Japan 27 2.0k 1.2× 2.3k 1.7× 913 1.5× 849 1.6× 466 1.3× 191 2.8k
Xu‐Qiang Shen Japan 23 1.1k 0.7× 539 0.4× 614 1.0× 537 1.0× 668 1.9× 98 1.6k
S. S. Lau United States 19 1.7k 1.1× 1.4k 1.0× 772 1.3× 855 1.6× 517 1.5× 53 2.2k
D. Gregušová Slovakia 23 1.2k 0.8× 1.2k 0.9× 729 1.2× 373 0.7× 361 1.0× 113 1.6k
Atsushi Yamaguchi Japan 18 1.6k 1.0× 729 0.5× 715 1.2× 716 1.3× 801 2.3× 82 2.0k

Countries citing papers authored by V. Kumar

Since Specialization
Citations

This map shows the geographic impact of V. Kumar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Kumar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Kumar more than expected).

Fields of papers citing papers by V. Kumar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Kumar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Kumar. The network helps show where V. Kumar may publish in the future.

Co-authorship network of co-authors of V. Kumar

This figure shows the co-authorship network connecting the top 25 collaborators of V. Kumar. A scholar is included among the top collaborators of V. Kumar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Kumar. V. Kumar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Kobayashi, K.W., et al.. (2020). A DC-50-GHz Direct-Coupled Self-Biased 50-nm Quasi-E-Mode GaN MMIC Amplifier Based on a 237-GHz fT-Multiplier. IEEE Microwave and Wireless Components Letters. 30(9). 892–895. 3 indexed citations
3.
Kobayashi, K.W., V. Kumar, Charles F. Campbell, Shuoqi Chen, & Yu Cao. (2020). 18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA. 1–4. 11 indexed citations
4.
Basu, Anirban, V. Kumar, & I. Adesida. (2007). Study of fluorine bombardment on the electrical properties of AlGaN∕GaN heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(6). 2607–2610. 12 indexed citations
5.
Kim, Dae‐Hyeong, V. Kumar, A. M. Dabiran, et al.. (2007). ALD Al 2 O 3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC. Electronics Letters. 43(2). 127–128. 14 indexed citations
6.
Jin, Niu, et al.. (2007). Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(6). 2085–2088. 21 indexed citations
7.
Kumar, V., et al.. (2005). Field-plated 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz. Electronics Letters. 41(19). 1080–1081. 8 indexed citations
8.
Adesida, I., Wu Lu, & V. Kumar. (2005). AlGaN/GaN HFETs for low noise applications. 2. 1163–1168. 13 indexed citations
9.
Adesida, I., et al.. (2004). GaN electronics with high electron mobility transistors. 1. 89–96. 1 indexed citations
10.
Kumar, V., R. Schwindt, A. Kuliev, et al.. (2004). Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates. Electronics Letters. 40(1). 80–81. 9 indexed citations
11.
Adesida, I., V. Kumar, & J. Yang. (2003). High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire. IEICE Transactions on Electronics. 86(10). 1955–1959. 5 indexed citations
12.
Lu, Wu, V. Kumar, E. L. Piner, & I. Adesida. (2003). DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration. IEEE Transactions on Electron Devices. 50(4). 1069–1074. 66 indexed citations
13.
Kumar, V., et al.. (2003). Characterisation of iridium Schottky contacts on n -Al x Ga 1− x N. Electronics Letters. 39(9). 747–748. 26 indexed citations
14.
Lu, Wu, V. Kumar, R. Schwindt, E. L. Piner, & I. Adesida. (2002). DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates. IEEE Transactions on Microwave Theory and Techniques. 50(11). 2499–2504. 35 indexed citations
15.
Lu, Wu, V. Kumar, R. Schwindt, E. L. Piner, & I. Adesida. (2002). A comparative study of surface passivation on AlGaN/GaN HEMTs. Solid-State Electronics. 46(9). 1441–1444. 110 indexed citations
16.
Selvanathan, D., Ling Zhou, V. Kumar, et al.. (2002). Ohmic contacts on n -type Al 0.59 Ga 0.41 N for solar blind detectors. Electronics Letters. 38(14). 755–756. 13 indexed citations
17.
Kumar, V., Wu Lu, R. Schwindt, et al.. (2002). AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz. IEEE Electron Device Letters. 23(8). 455–457. 191 indexed citations
18.
Kumar, V., Wu Lu, Farid Khan, et al.. (2002). High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm. Electronics Letters. 38(5). 252–253. 13 indexed citations
19.
Khan, Farid, Lei Zhou, V. Kumar, & I. Adesida. (2002). Low-Damage Etching of Silicon Carbide in Cl[sub 2]-Based Plasmas. Journal of The Electrochemical Society. 149(7). G420–G420. 12 indexed citations
20.
Walker, D., V. Kumar, K. Mi, et al.. (2000). Solar-blind AlGaN photodiodes with very low cutoff wavelength. Applied Physics Letters. 76(4). 403–405. 151 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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