V. Kumar

2.3k citations

66 papers · 1.9k indexed · h-index 23

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 62
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 19
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design 25
- Semiconductor materials and devices 21
- Silicon Carbide Semiconductor Technologies 17
- Advancements in Semiconductor Devices and Circuit Design 6
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 12
Mechanics of Materials top 5%
- Metal and Thin Film Mechanics 6

Co-authors: I. Adesida R. Schwindt A. Kuliev Wu Lu D. Selvanathan E. L. Piner Farid Khan G. Simin
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Electronics Letters (13 papers)Solid-State Electronics (5 papers)IEEE Electron Device Letters (4 papers)
Partner nations: United States South Korea India

In The Last Decade

V. Kumar

66 papers receiving 1.8k citations

Peers

Countries citing papers authored by V. Kumar

Since Specialization

Citations

This map shows the geographic impact of V. Kumar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Kumar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Kumar more than expected).

Fields of papers citing papers by V. Kumar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Kumar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Kumar. The network helps show where V. Kumar may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. Kumar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Kumar Line = papers co-authored together V. Kumar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A baseband-65GHz High Linearity-Bandwidth GaN LNA using a 1.7A/mm High Current Density ScAlN based GaN HEMT Technology K.W. Kobayashi,V. Kumar,Andy Xie,José Luis González,Janet Pelley special to C EN,A. Ketterson	2021	11
2	A DC-50-GHz Direct-Coupled Self-Biased 50-nm Quasi-E-Mode GaN MMIC Amplifier Based on a 237-GHz f_T-Multiplier IEEE Microwave and Wireless Components Letters ·K.W. Kobayashi,V. Kumar,A. Weisbrod	2020	3
3	Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology K.W. Kobayashi,V. Kumar,Charles F. Campbell,Shuoqi Chen,Yu Cao,José Luis González	2020	10
4	18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA K.W. Kobayashi,V. Kumar,Charles F. Campbell,Shuoqi Chen,Yu Cao	2020	11
5	Study of fluorine bombardment on the electrical properties of AlGaN∕GaN heterostructures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Anirban Basu,V. Kumar,I. Adesida	2007	12
6	Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Ki-Na Kim,Niu Jin,V. Kumar,I. Adesida,Mark Shannon	2007	21
7	ALD Al ₂ O ₃ passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC Electronics Letters ·Dae‐Hyeong Kim,V. Kumar,Łukasz Krajewski,A. M. Dabiran,A. M. Wowchak,A. Osinsky,I. Adesida	2007	14
8	Field-plated 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz Electronics Letters ·V. Kumar,Łukasz Krajewski,Efrat Katz,B. Peres,Daysi Josefina Guzmán,I. Adesida	2005	8
9	AlGaN/GaN HFETs for low noise applications I. Adesida,Wu Lu,V. Kumar	2005	13
10	GaN electronics with high electron mobility transistors I. Adesida,V. Kumar,Jolanta Martyncevienė,A. Kuliev,R. Schwindt,玉江山邨	2004	1
11	Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates Electronics Letters ·Jeri Wohnhas,V. Kumar,R. Schwindt,A. Kuliev,R. Birkhahn,D. Gotthold,Shiping Guo,Ida M Fortin,P. Harston	2004	9
12	High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire IEICE Transactions on Electronics ·I. Adesida,V. Kumar,J. Yang	2003	5
13	Characterisation of iridium Schottky contacts on n -Al _x Ga _{1− x} N Electronics Letters ·V. Kumar,D. Selvanathan,A. Kuliev,Marissa Litwin,J.S. Flynn,I. Adesida	2003	26
14	Ohmic contacts on n -type Al _0.59 Ga _0.41 N for solar blind detectors Electronics Letters ·D. Selvanathan,Ling Zhou,V. Kumar,Ruizheng Miao,Mark A. Johnson,J. F. Schetzina,I. Adesida	2002	13
15	High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm Electronics Letters ·V. Kumar,Wu Lu,Farid Khan,R. Schwindt,A. Kuliev,G. Simin,J. Yang,M. Asif Khan,I. Adesida	2002	13
16	Low-Damage Etching of Silicon Carbide in Cl[sub 2]-Based Plasmas Journal of The Electrochemical Society ·Farid Khan,Lei Zhou,V. Kumar,I. Adesida	2002	12
17	DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates IEEE Transactions on Microwave Theory and Techniques ·Wu Lu,V. Kumar,R. Schwindt,E. L. Piner,I. Adesida	2002	35
18	A comparative study of surface passivation on AlGaN/GaN HEMTs Solid-State Electronics ·Wu Lu,V. Kumar,R. Schwindt,E. L. Piner,I. Adesida	2002	110
19	AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters ·V. Kumar,Wu Lu,R. Schwindt,A. Kuliev,G. Simin,J. Yang,M. Asif Khan,I. Adesida	2002	191
20	Solar-blind AlGaN photodiodes with very low cutoff wavelength Applied Physics Letters ·D. Walker,V. Kumar,K. Mi,Peter Sandvik,Patrick Kung,Charles J.W.C. Vervaet,Manijeh Razeghi	2000	151

About V. Kumar

V. Kumar is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 66 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (62 papers), Radio Frequency Integrated Circuit Design (25 papers), Semiconductor materials and devices (21 papers), Ga2O3 and related materials (19 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor Quantum Structures and Devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Metal and Thin Film Mechanics (6 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (598 citations) and Electrical and Electronic Engineering (1.3k citations). V. Kumar has collaborated with scholars based in United States, South Korea and India. Frequent co-authors include I. Adesida, R. Schwindt, A. Kuliev, Wu Lu, D. Selvanathan, E. L. Piner, Farid Khan, G. Simin, J. Yang and M. Asif Khan. Their work appears in journals such as Electronics Letters, Solid-State Electronics, IEEE Electron Device Letters, IEEE Microwave and Wireless Components Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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