W. E. Hoke

2.9k citations

130 papers · 2.3k indexed · h-index 24

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 34
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 75
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 59
- Radio Frequency Integrated Circuit Design 29
- Semiconductor Lasers and Optical Devices 20
- Advancements in Semiconductor Devices and Circuit Design 19
- Advanced Semiconductor Detectors and Materials 15
- Photonic and Optical Devices 13
Electronic, Optical and Magnetic Materials top 10%
Materials Chemistry top 10%

Co-authors: P. J. Lemonias Tomás Palacios Eduardo M. Chumbes J.W. Chung A. Torabi T.E. Kazior P. S. Lyman P.F. Marsh
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering
Journals: Applied Physics Letters (11 papers)Journal of Applied Physics (6 papers)Electronics Letters (6 papers)
Partner nations: United States France United Kingdom

In The Last Decade

W. E. Hoke

128 papers receiving 2.1k citations

Peers

Countries citing papers authored by W. E. Hoke

Since Specialization

Citations

This map shows the geographic impact of W. E. Hoke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. E. Hoke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. E. Hoke more than expected).

Fields of papers citing papers by W. E. Hoke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. E. Hoke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. E. Hoke. The network helps show where W. E. Hoke may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W. E. Hoke, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. E. Hoke Line = papers co-authored together W. E. Hoke links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	(Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come ECS Transactions ·J. R. LaRoche,T. I. Fomicheva,Zuraini Md Dali,W. E. Hoke,Yu Cao,Ahmad Asyikin,John Gilks,G. Gebara,T. A. Kennedy,Richards Anne,Oleg Laboutin,C. Y. Fong,Arve Vøllo,Wayne Johnson,T.E. Kazior,Jonathan P. Comeau	2014	1
2	Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke,敏克井上,A. Torabi,P. S. Lyman,Jianhong LV,B. D. Schultz	2014	13
3	Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke,R. Pendzialek,Ahmad Asyikin,T.E. Kazior,J. R. LaRoche,敏克井上,Zhang Hengfeng,A. Torabi,Thi-My-Le Huynh,Edirlan Rosa Cajaes,Tomás Palacios	2011	73
4	Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke,敏克井上,J. R. LaRoche,A. Torabi,Ahmad Asyikin,Scarleth Judith,Amanda Fritzlan,P. S. Lyman,T.E. Kazior,Mayank T. Bulsara,Eugene A. Fitzgerald,D. Lubyshev,Norman Mathieson Leitch	2010	3
5	Short wavelength band edge thermometry during molecular beam epitaxial growth of GaN on SiC substrates and detected adatom self-heating effects Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke,Noboru Trimoto,敏克井上,Ravi Kumar Prinshu,Zhang Hengfeng	2010	3
6	Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration DSpace@MIT (Massachusetts Institute of Technology) ·Nancy Yang,Mayank T. Bulsara,Eugene A. Fitzgerald,管子,D. Lubyshev,J. M. Fastenau,Ying Wu,Miguel Urteaga,W. Ha,J. Bergman,B. Brar,Birgit Pfeiler,Nicolas Daval,L. Benaissa,E. Augendre,W. E. Hoke,J. R. LaRoche,K.J. Herrick,T.E. Kazior	2009	3
7	Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Torabi,W. E. Hoke,Zhang Hengfeng,A.G. Brinkman,R. B. Hallock,敏克井上	2005	9
8	High indium metamorphic HEMT on a GaAs substrate Journal of Crystal Growth ·W. E. Hoke,敏克井上,A. Torabi,C.S. Whelan,P.F. Marsh,R. Leoni,Chao Xu,K. C. Hsieh	2003	35
9	Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes Journal of Lightwave Technology ·Jae‐Hyung Jang,Dylan Meinster,W. E. Hoke,P. J. Lemonias,Patrick Fay,I. Adesida	2002	20
10	Long wavelength metamorphic double heterojunctionIn _0.53 Ga _0.47 As/InAlGaAs/In _0.52 Al _0.48 As photodiodes on GaAs substrates Electronics Letters ·Jae‐Hyung Jang,Dylan Meinster,D.C. Dumka,W. E. Hoke,P. J. Lemonias,Patrick Fay,I. Adesida	2001	4
11	Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz D.C. Dumka,W. E. Hoke,P. J. Lemonias,Dylan Meinster,I. Adesida	1999	1
12	Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. J. Lemonias,Zhang Hengfeng,P. S. Lyman,A. Torabi,P.F. Marsh,Shaxina Jabborova,S.M. Lardizabal,Deborah Baron Ellis	1999	77
13	Initial results for InGaAs films grown on InGaAs substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. S. Lyman,John Carter,Elaine Loh,W. A. Bonner,B. Lent	1995	2
14	Large periphery, high power pseudomorphic HEMTs 彭小瑜,M.Pietrobelli Mpietrobelli,A. Platzker,S. Shanfield,Anthony Bertrand,W. E. Hoke,P. S. Lyman	1993	12
15	Photoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier sheet densities Applied Physics Letters ·О.О. Гололобова,W. E. Hoke,P. S. Lyman,Elaine Loh	1991	17
16	Millimeter-wave monolithic GaAs IMPATT VCO IEEE Transactions on Microwave Theory and Techniques ·Muhammad Ataul Mujib,Янковий Микола Олександрович,P Bailey,Edgar Metzler,W. E. Hoke	1988	6
17	Q-Band Monolithic GaAs Impatt Oscillator Y. K. Lee,M.G. Adlerstein,В П Тюрин,O. Gibbons,W. E. Hoke,D. Massé,Янковий Микола Олександрович	1987	5
18	Molecular beam epitaxial growth of GaAs millimeter-wave IMPATT diode material Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·W. E. Hoke,Isabel Cristiane de Mendonça Silva	1984	3
19	Self-Report as a Validity Check for the Lüscher Color Test Perceptual and Motor Skills ·H. W. McSpadden,W. E. Hoke	1981	4
20	M dependence of T1 and T2 for the inversion doublets of 15NH3 The Journal of Chemical Physics ·W. E. Hoke,David R. Bauer,W. H. Flygare	1977	16

About W. E. Hoke

W. E. Hoke is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 130 papers that have together received 2.3k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (75 papers), Semiconductor materials and devices (59 papers), GaN-based semiconductor devices and materials (34 papers), Radio Frequency Integrated Circuit Design (29 papers), Semiconductor Lasers and Optical Devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Advanced Semiconductor Detectors and Materials (15 papers) and Photonic and Optical Devices (13 papers). The work is most often cited by research in Condensed Matter Physics (792 citations), Atomic and Molecular Physics, and Optics (1.2k citations) and Electrical and Electronic Engineering (1.7k citations). W. E. Hoke has collaborated with scholars based in United States, France and United Kingdom. Frequent co-authors include P. J. Lemonias, Tomás Palacios, Eduardo M. Chumbes, J.W. Chung, A. Torabi, T.E. Kazior, P. S. Lyman, P.F. Marsh, W. H. Flygare and C.S. Whelan. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, IEEE Electron Device Letters and Journal of Crystal Growth.

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