W. E. Hoke

2.9k total citations
130 papers, 2.3k citations indexed

About

W. E. Hoke is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W. E. Hoke has authored 130 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 111 papers in Electrical and Electronic Engineering, 84 papers in Atomic and Molecular Physics, and Optics and 34 papers in Condensed Matter Physics. Recurrent topics in W. E. Hoke's work include Semiconductor Quantum Structures and Devices (75 papers), Semiconductor materials and devices (59 papers) and GaN-based semiconductor devices and materials (34 papers). W. E. Hoke is often cited by papers focused on Semiconductor Quantum Structures and Devices (75 papers), Semiconductor materials and devices (59 papers) and GaN-based semiconductor devices and materials (34 papers). W. E. Hoke collaborates with scholars based in United States, France and United Kingdom. W. E. Hoke's co-authors include P. J. Lemonias, Tomás Palacios, Eduardo M. Chumbes, J.W. Chung, A. Torabi, T.E. Kazior, P. S. Lyman, P.F. Marsh, W. H. Flygare and C.S. Whelan and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. E. Hoke

128 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. E. Hoke United States 24 1.7k 1.2k 792 495 274 130 2.3k
T. F. Kuech United States 26 1.9k 1.1× 2.1k 1.7× 749 0.9× 700 1.4× 251 0.9× 78 2.8k
A. F. Tsatsul’nikov Russia 29 2.2k 1.3× 2.5k 2.1× 1.0k 1.3× 1.1k 2.2× 352 1.3× 257 3.2k
J. M. Vandenberg United States 32 1.4k 0.8× 1.6k 1.3× 929 1.2× 679 1.4× 761 2.8× 95 2.9k
J. Hader United States 27 1.7k 1.0× 1.9k 1.6× 567 0.7× 354 0.7× 153 0.6× 132 2.4k
C. E. Stutz United States 26 1.6k 0.9× 1.8k 1.5× 650 0.8× 808 1.6× 371 1.4× 130 2.5k
J. M. Woodall United States 30 1.8k 1.0× 2.0k 1.7× 416 0.5× 586 1.2× 150 0.5× 98 2.8k
D. B. Fenner United States 18 774 0.4× 461 0.4× 597 0.8× 789 1.6× 284 1.0× 83 1.6k
C. R. Whitehouse United Kingdom 28 1.6k 0.9× 1.6k 1.3× 308 0.4× 580 1.2× 171 0.6× 119 2.2k
G. Kipshidze United States 28 1.6k 0.9× 1.2k 1.0× 640 0.8× 519 1.0× 368 1.3× 145 2.2k
Shin-ichi Nakashima Japan 23 1.3k 0.8× 894 0.7× 243 0.3× 703 1.4× 236 0.9× 105 2.0k

Countries citing papers authored by W. E. Hoke

Since Specialization
Citations

This map shows the geographic impact of W. E. Hoke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. E. Hoke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. E. Hoke more than expected).

Fields of papers citing papers by W. E. Hoke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. E. Hoke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. E. Hoke. The network helps show where W. E. Hoke may publish in the future.

Co-authorship network of co-authors of W. E. Hoke

This figure shows the co-authorship network connecting the top 25 collaborators of W. E. Hoke. A scholar is included among the top collaborators of W. E. Hoke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. E. Hoke. W. E. Hoke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
LaRoche, J. R., W. E. Hoke, Yu Cao, et al.. (2014). (Invited) GaN HEMT Fabrication in a 200mm Si Foundry Environment: The Time Has Come. ECS Transactions. 61(4). 29–32. 1 indexed citations
2.
Yang, Nancy, Mayank T. Bulsara, Eugene A. Fitzgerald, et al.. (2009). Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration. DSpace@MIT (Massachusetts Institute of Technology). 1–2. 3 indexed citations
3.
Hoke, W. E., et al.. (2005). Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures. Journal of Applied Physics. 98(8). 16 indexed citations
4.
Torabi, A., et al.. (2005). Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(3). 1194–1198. 9 indexed citations
5.
Shanfield, S., A. Platzker, T.E. Kazior, et al.. (2003). One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching. 639–641. 3 indexed citations
6.
Jang, Jae‐Hyung, et al.. (2003). Wavelength dependent characteristics of high-speed metamorphic photodiodes. IEEE Photonics Technology Letters. 15(2). 281–283. 5 indexed citations
7.
Hoke, W. E., A. Torabi, C.S. Whelan, et al.. (2003). High indium metamorphic HEMT on a GaAs substrate. Journal of Crystal Growth. 251(1-4). 827–831. 35 indexed citations
8.
Whelan, C.S., et al.. (2003). 40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology. IEEE Electron Device Letters. 24(9). 529–531. 11 indexed citations
9.
10.
Hoke, W. E., P. J. Lemonias, A. Torabi, et al.. (2001). Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1505–1509. 17 indexed citations
11.
Dumka, D.C., et al.. (1999). Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz. 783–786. 1 indexed citations
12.
Hoke, W. E., P. J. Lemonias, P. S. Lyman, et al.. (1999). Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1131–1135. 77 indexed citations
13.
Hoke, W. E., et al.. (1995). Initial results for InGaAs films grown on InGaAs substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 678–680. 2 indexed citations
14.
Platzker, A., et al.. (1993). Large periphery, high power pseudomorphic HEMTs. 351–353. 12 indexed citations
15.
Adlerstein, M.G., M. P. Zaitlin, G. W. Flynn, et al.. (1991). High power density pulsed X-band heterojunction bipolar transistors. Electronics Letters. 27(2). 148–149. 16 indexed citations
16.
Pan, N., et al.. (1990). Growth of pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition. Applied Physics Letters. 56(3). 274–276. 10 indexed citations
17.
Hoke, W. E. & P. J. Lemonias. (1985). Metalorganic growth of CdTe and HgCdTe epitaxial films at a reduced substrate temperature using diisopropyltelluride. Applied Physics Letters. 46(4). 398–400. 56 indexed citations
18.
Hoke, W. E., et al.. (1984). Molecular beam epitaxial growth of GaAs millimeter-wave IMPATT diode material. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(2). 272–275. 3 indexed citations
19.
Hoke, W. E., et al.. (1981). Self-Report as a Validity Check for the Lüscher Color Test. Perceptual and Motor Skills. 53(2). 545–546. 4 indexed citations
20.
Hoke, W. E., et al.. (1976). The measurement and interpretation of T1 and T2 in the inversion doublets of 15NH3 and the rotational transitions in OCS. The Journal of Chemical Physics. 64(12). 5276–5282. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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