R.E. Leoni

415 total citations
32 papers, 276 citations indexed

About

R.E. Leoni is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R.E. Leoni has authored 32 papers receiving a total of 276 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in R.E. Leoni's work include Radio Frequency Integrated Circuit Design (15 papers), Semiconductor Quantum Structures and Devices (10 papers) and Microwave Engineering and Waveguides (10 papers). R.E. Leoni is often cited by papers focused on Radio Frequency Integrated Circuit Design (15 papers), Semiconductor Quantum Structures and Devices (10 papers) and Microwave Engineering and Waveguides (10 papers). R.E. Leoni collaborates with scholars based in United States, France and Israel. R.E. Leoni's co-authors include Anh‐Vu Pham, C.S. Whelan, James C. M. Hwang, T.E. Kazior, P.F. Marsh, W. E. Hoke, S.M. Lardizabal, J. Laskar, P. J. Lemonias and P. S. Lyman and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

R.E. Leoni

31 papers receiving 257 citations

Peers

R.E. Leoni
H. Massler Germany
M. Siddiqui United States
J.L. Vorhaus United States
R. Esfandiari United States
L.D. Reynolds United States
L. Verweyen Germany
M.E. Kim United States
Haorui Luo Singapore
H. Massler Germany
R.E. Leoni
Citations per year, relative to R.E. Leoni R.E. Leoni (= 1×) peers H. Massler

Countries citing papers authored by R.E. Leoni

Since Specialization
Citations

This map shows the geographic impact of R.E. Leoni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.E. Leoni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.E. Leoni more than expected).

Fields of papers citing papers by R.E. Leoni

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.E. Leoni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.E. Leoni. The network helps show where R.E. Leoni may publish in the future.

Co-authorship network of co-authors of R.E. Leoni

This figure shows the co-authorship network connecting the top 25 collaborators of R.E. Leoni. A scholar is included among the top collaborators of R.E. Leoni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.E. Leoni. R.E. Leoni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pham, Anh‐Vu, et al.. (2017). Design of 600-W Low-Loss Ultra-Wideband Ferriteless Balun. IEEE Transactions on Microwave Theory and Techniques. 66(2). 902–910. 3 indexed citations
2.
Pham, Binh, et al.. (2016). 23:1 Bandwidth ratio quasi‐lumped component balun on a multilayer organic substrate. IET Microwaves Antennas & Propagation. 10(5). 561–567. 3 indexed citations
3.
Pham, Anh‐Vu, et al.. (2013). Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at $X$-Band. IEEE Transactions on Microwave Theory and Techniques. 61(3). 1291–1300. 20 indexed citations
4.
Pham, Binh, et al.. (2013). A 23:1 bandwidth ratio balun on multilayer organic substrate. 1–3. 6 indexed citations
5.
Leoni, R.E., et al.. (2010). Active simultaneous harmonic source and load pull assisted by local polyharmonic distortion models. 2010 IEEE MTT-S International Microwave Symposium. 1166–1169. 5 indexed citations
6.
Pham, Anh‐Vu, et al.. (2007). A 6-18 GHz Push-Pull Power Amplifier with Wideband Even-Order Distortion Cancellation in LCP Module. IEEE MTT-S International Microwave Symposium digest. 1079–1082. 6 indexed citations
7.
Pham, Anh‐Vu, et al.. (2005). Development of a low-loss multilayered broadband balun using twin-thickness thin-film. IEEE MTT-S International Microwave Symposium Digest, 2005.. 1243–1246. 3 indexed citations
8.
Whelan, C.S., et al.. (2003). 40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology. IEEE Electron Device Letters. 24(9). 529–531. 11 indexed citations
9.
Marsh, P.F., S.M. Lardizabal, R.E. Leoni, et al.. (2003). Low noise metamorphic HEMT devices and amplifiers on GaAs substrates. 1. 105–108. 9 indexed citations
10.
Leoni, R.E., et al.. (2002). Conductance DLTS analysis of the correlation between power slump and gate lag. 23. 169–172. 2 indexed citations
11.
Leoni, R.E., et al.. (2002). Breakdown effects on the performance and reliability of power MESFETs. 34–37. 6 indexed citations
12.
Marsh, P.F., C.S. Whelan, W. E. Hoke, R.E. Leoni, & T.E. Kazior. (2002). Reliability of metamorphic HEMTs on GaAs substrates. Microelectronics Reliability. 42(7). 997–1002. 17 indexed citations
13.
Leoni, R.E., et al.. (2002). A physically-based transient SPICE model for GaAs MESFET's. 2. 607–610. 2 indexed citations
14.
Leoni, R.E., et al.. (2002). Substrate-induced gate lag in ion-implanted GaAs MESFETs. 161–164. 5 indexed citations
15.
Leoni, R.E. & James C. M. Hwang. (2002). Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs. 31–33. 4 indexed citations
16.
Leoni, R.E., et al.. (2001). A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs. IEEE Transactions on Microwave Theory and Techniques. 49(6). 1180–1186. 14 indexed citations
17.
Marsh, P.F., et al.. (2001). Reliability of metamorphic HEMTs on GaAs substrates. 191–202. 4 indexed citations
18.
Leoni, R.E. & James C. M. Hwang. (1999). Mechanisms for output power expansion and degradation of PHEMT's during high-efficiency operation. IEEE Transactions on Electron Devices. 46(8). 1608–1613. 15 indexed citations
19.
Leoni, R.E.. (1995). An electrochemical capacitance-voltage technique for the determination of pseudomorphic high electron mobility transistor material parameters. 1 indexed citations
20.
Leoni, R.E., et al.. (1995). 1/f Noise in Polycrystalline Silicon Thin Film Transistors. 611–614. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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