A. Torabi

1.2k citations

56 papers · 890 indexed · h-index 18

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 17
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 33
- Semiconductor materials and interfaces 6
- Quantum and electron transport phenomena 4
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 27
- Advanced Semiconductor Detectors and Materials 11
- Chalcogenide Semiconductor Thin Films 8
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 5
Atmospheric Science

Co-authors: B. Jensen W. E. Hoke P. S. Lyman Christopher J. Summers P. J. Lemonias B. K. Wagner C. J. Summers J. D. Benson
Cited by: Condensed Matter Physics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering
Journals: Journal of Applied Physics (7 papers)Applied Physics Letters (6 papers)IEEE Journal of Quantum Electronics (4 papers)
Partner nations: United States China

In The Last Decade

A. Torabi

55 papers receiving 827 citations

Peers

Countries citing papers authored by A. Torabi

Since Specialization

Citations

This map shows the geographic impact of A. Torabi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Torabi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Torabi more than expected).

Fields of papers citing papers by A. Torabi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Torabi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Torabi. The network helps show where A. Torabi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Torabi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Torabi Line = papers co-authored together A. Torabi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke,敏克井上,A. Torabi,P. S. Lyman,Jianhong LV,B. D. Schultz	2014	13
2	Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke,R. Pendzialek,Ahmad Asyikin,T.E. Kazior,J. R. LaRoche,敏克井上,Zhang Hengfeng,A. Torabi,Thi-My-Le Huynh,Edirlan Rosa Cajaes,Tomás Palacios	2011	73
3	Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·W. E. Hoke,敏克井上,J. R. LaRoche,A. Torabi,Ahmad Asyikin,Scarleth Judith,Amanda Fritzlan,P. S. Lyman,T.E. Kazior,Mayank T. Bulsara,Eugene A. Fitzgerald,D. Lubyshev,Norman Mathieson Leitch	2010	3
4	Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,A. Torabi,R. B. Hallock,Zhang Hengfeng,敏克井上	2006	9
5	Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Torabi,W. E. Hoke,Zhang Hengfeng,A.G. Brinkman,R. B. Hallock,敏克井上	2005	9
6	Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures Journal of Applied Physics ·W. E. Hoke,A. Torabi,Zhang Hengfeng,R. B. Hallock,敏克井上	2005	16
7	High indium metamorphic HEMT on a GaAs substrate Journal of Crystal Growth ·W. E. Hoke,敏克井上,A. Torabi,C.S. Whelan,P.F. Marsh,R. Leoni,Chao Xu,K. C. Hsieh	2003	35
8	Quasi-optical power combining of solid state sources in K/sub a/-band 王兴权,A. Torabi,R. W. McMillan,C. J. Summers,James C. Wiltse,D Bieniasz Paul,Maria Angeline Franceschini	2002	0
9	Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. J. Lemonias,敏克井上,A. Torabi,Tamara Aulia Fakhrinnisa,R.K. SINGH,Jae‐Hyung Jang,Dylan Meinster,D.C. Dumka,I. Adesida,Roger Nye Lincoln,K. C. Hsieh	2001	17
10	Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence Journal of Applied Physics ·О.О. Гололобова,A. Torabi,P. S. Lyman	1999	6
11	Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·W. E. Hoke,P. J. Lemonias,Zhang Hengfeng,P. S. Lyman,A. Torabi,P.F. Marsh,Shaxina Jabborova,S.M. Lardizabal,Deborah Baron Ellis	1999	77
12	Characterization of Structural Inhomogeneities in GaAs/AIGaAs Superlattices Advances in X-ray Analysis ·正哲松村,Stuart R. Stock,A. Torabi,Christopher J. Summers	1989	1
13	Photoluminescence Studies Of Coupled Quantum Well Structures In The AlGaAs/GaAs System Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·A. Torabi,Kevin F. Brennan,C. J. Summers	1987	1
14	Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces Applied Physics Letters ·J. D. Benson,B. K. Wagner,A. Torabi,Christopher J. Summers	1986	64
15	Refractive index of hexagonal II–VI compounds CdSe, CdS, and CdSeXS_1–X Journal of the Optical Society of America B ·B. Jensen,A. Torabi	1986	21
16	The refractive index of compounds PbTe, PbSe, and PbS IEEE Journal of Quantum Electronics ·B. Jensen,A. Torabi	1984	8
17	Refractive index of the laser-window material ZnSe Infrared Physics ·B. Jensen,A. Torabi	1983	6
18	Linear and nonlinear intensity dependent refractive index of Hg1−xCdxTe Journal of Applied Physics ·B. Jensen,A. Torabi	1983	29
19	Dispersion of the refractive index of InP and ZnTe Journal of Applied Physics ·B. Jensen,A. Torabi	1983	13
20	Dispersion of the refractive index of GaAs and Al<inf>x</inf>Ga<inf>1-x</inf>As IEEE Journal of Quantum Electronics ·B. Jensen,A. Torabi	1983	16

About A. Torabi

A. Torabi is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 56 papers that have together received 890 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and devices (27 papers), GaN-based semiconductor devices and materials (17 papers), Advanced Semiconductor Detectors and Materials (11 papers), Chalcogenide Semiconductor Thin Films (8 papers), Semiconductor materials and interfaces (6 papers), Ga2O3 and related materials (5 papers) and Quantum and electron transport phenomena (4 papers). The work is most often cited by research in Condensed Matter Physics (251 citations), Atomic and Molecular Physics, and Optics (512 citations) and Electrical and Electronic Engineering (606 citations). A. Torabi has collaborated with scholars based in United States and China. Frequent co-authors include B. Jensen, W. E. Hoke, P. S. Lyman, Christopher J. Summers, P. J. Lemonias, B. K. Wagner, C. J. Summers, J. D. Benson, P.F. Marsh and P. H. Wine. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, IEEE Journal of Quantum Electronics, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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