A. Torabi

1.2k total citations
56 papers, 890 citations indexed

About

A. Torabi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, A. Torabi has authored 56 papers receiving a total of 890 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 37 papers in Atomic and Molecular Physics, and Optics and 17 papers in Condensed Matter Physics. Recurrent topics in A. Torabi's work include Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and devices (27 papers) and GaN-based semiconductor devices and materials (17 papers). A. Torabi is often cited by papers focused on Semiconductor Quantum Structures and Devices (33 papers), Semiconductor materials and devices (27 papers) and GaN-based semiconductor devices and materials (17 papers). A. Torabi collaborates with scholars based in United States and China. A. Torabi's co-authors include B. Jensen, W. E. Hoke, P. J. Lemonias, Christopher J. Summers, P. S. Lyman, B. K. Wagner, C. J. Summers, J. D. Benson, P.F. Marsh and A. R. Ravishankara and has published in prestigious journals such as Journal of Geophysical Research Atmospheres, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

A. Torabi

55 papers receiving 827 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Torabi United States 18 606 512 251 167 110 56 890
R. Cadoret France 18 451 0.7× 323 0.6× 238 0.9× 331 2.0× 126 1.1× 57 763
E. Luna Germany 19 537 0.9× 668 1.3× 173 0.7× 319 1.9× 221 2.0× 69 908
G. H. Döhler Germany 15 661 1.1× 729 1.4× 253 1.0× 266 1.6× 115 1.0× 62 1.0k
J. Diaz United States 18 694 1.1× 432 0.8× 371 1.5× 233 1.4× 185 1.7× 63 1.0k
Masashi Kumagawa Japan 16 551 0.9× 412 0.8× 100 0.4× 498 3.0× 86 0.8× 100 936
M. Razeghi United States 20 923 1.5× 765 1.5× 440 1.8× 272 1.6× 229 2.1× 45 1.3k
M. Giehler Germany 16 428 0.7× 332 0.6× 199 0.8× 200 1.2× 84 0.8× 41 736
K. Gamo Japan 19 639 1.1× 632 1.2× 187 0.7× 195 1.2× 108 1.0× 92 1.0k
Alexey Pavolotsky Sweden 17 470 0.8× 223 0.4× 281 1.1× 68 0.4× 43 0.4× 76 943
M. Razeghi United States 16 584 1.0× 319 0.6× 276 1.1× 182 1.1× 162 1.5× 26 904

Countries citing papers authored by A. Torabi

Since Specialization
Citations

This map shows the geographic impact of A. Torabi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Torabi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Torabi more than expected).

Fields of papers citing papers by A. Torabi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Torabi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Torabi. The network helps show where A. Torabi may publish in the future.

Co-authorship network of co-authors of A. Torabi

This figure shows the co-authorship network connecting the top 25 collaborators of A. Torabi. A scholar is included among the top collaborators of A. Torabi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Torabi. A. Torabi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hoke, W. E., et al.. (2014). Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(3). 13 indexed citations
2.
Hoke, W. E., et al.. (2011). Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(2). 73 indexed citations
3.
Hoke, W. E., J. R. LaRoche, A. Torabi, et al.. (2010). Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(3). C3H1–C3H4. 3 indexed citations
4.
Hoke, W. E., et al.. (2006). Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(3). 1500–1504. 9 indexed citations
5.
Hoke, W. E., et al.. (2005). Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures. Journal of Applied Physics. 98(8). 16 indexed citations
6.
Torabi, A., et al.. (2005). Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(3). 1194–1198. 9 indexed citations
7.
Hoke, W. E., A. Torabi, C.S. Whelan, et al.. (2003). High indium metamorphic HEMT on a GaAs substrate. Journal of Crystal Growth. 251(1-4). 827–831. 35 indexed citations
8.
9.
Hoke, W. E., P. J. Lemonias, A. Torabi, et al.. (2001). Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 19(4). 1505–1509. 17 indexed citations
10.
Hoke, W. E., P. J. Lemonias, P. S. Lyman, et al.. (1999). Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1131–1135. 77 indexed citations
11.
12.
Hoke, W. E., et al.. (1998). Solid source molecular beam epitaxial growth of In0.5Ga0.5P pseudomorphic high electron mobility transistor structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1408–1412. 4 indexed citations
13.
Stock, Stuart R., et al.. (1989). Characterization of Structural Inhomogeneities in GaAs/AIGaAs Superlattices. Advances in X-ray Analysis. 33. 67–74. 1 indexed citations
14.
Torabi, A., Kevin F. Brennan, & C. J. Summers. (1987). Photoluminescence Studies Of Coupled Quantum Well Structures In The AlGaAs/GaAs System. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 792. 152–152. 1 indexed citations
15.
Benson, J. D., B. K. Wagner, A. Torabi, & Christopher J. Summers. (1986). Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces. Applied Physics Letters. 49(16). 1034–1036. 64 indexed citations
16.
Ravishankara, A. R., et al.. (1986). N2O5 photolysis: Quantum yields for NO3 and O(3P). Journal of Geophysical Research Atmospheres. 91(D5). 5355–5360. 23 indexed citations
17.
Jensen, B. & A. Torabi. (1984). The refractive index of compounds PbTe, PbSe, and PbS. IEEE Journal of Quantum Electronics. 20(6). 618–621. 8 indexed citations
18.
Jensen, B. & A. Torabi. (1983). Refractive index of the laser-window material ZnSe. Infrared Physics. 23(6). 359–361. 6 indexed citations
19.
Jensen, B. & A. Torabi. (1983). Dispersion of the refractive index of InP and ZnTe. Journal of Applied Physics. 54(4). 2030–2035. 13 indexed citations
20.
Jensen, B. & A. Torabi. (1983). Linear and nonlinear intensity dependent refractive index of Hg1−xCdxTe. Journal of Applied Physics. 54(10). 5945–5949. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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