Dmitri Loubychev

660 total citations
28 papers, 546 citations indexed

About

Dmitri Loubychev is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Dmitri Loubychev has authored 28 papers receiving a total of 546 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in Dmitri Loubychev's work include Semiconductor Quantum Structures and Devices (18 papers), Semiconductor materials and devices (14 papers) and Radio Frequency Integrated Circuit Design (12 papers). Dmitri Loubychev is often cited by papers focused on Semiconductor Quantum Structures and Devices (18 papers), Semiconductor materials and devices (14 papers) and Radio Frequency Integrated Circuit Design (12 papers). Dmitri Loubychev collaborates with scholars based in United States, France and Switzerland. Dmitri Loubychev's co-authors include J. M. Fastenau, Suman Datta, D. K. Mohata, Theresa S. Mayer, M.J.W. Rodwell, Ying Wu, Zach Griffith, Amy W. K. Liu, Vijaykrishnan Narayanan and Mantu K. Hudait and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Dmitri Loubychev

27 papers receiving 532 citations

Peers

Countries citing papers authored by Dmitri Loubychev

Since Specialization

Citations

This map shows the geographic impact of Dmitri Loubychev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dmitri Loubychev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dmitri Loubychev more than expected).

Fields of papers citing papers by Dmitri Loubychev

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dmitri Loubychev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dmitri Loubychev. The network helps show where Dmitri Loubychev may publish in the future.

Co-authorship network of co-authors of Dmitri Loubychev

This figure shows the co-authorship network connecting the top 25 collaborators of Dmitri Loubychev. A scholar is included among the top collaborators of Dmitri Loubychev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dmitri Loubychev. Dmitri Loubychev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy 2017 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Dmitri Loubychev, J. M. Fastenau, (unknown), (unknown), Amy W. K. Liu, (unknown)	9
2	MWIR barrier infrared detectors with greater than 5μm cutoff using bulk InAsSb grown on GaSb substrates 2017 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Neil F. Baril, (unknown), (unknown), Meimei Z. Tidrow, Dmitri Loubychev, J. M. Fastenau, Amy W. K. Liu, Sumith V. Bandara	5
3	An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage 2014 ·IEEE Journal of the Electron Devices Society ·(unknown), (unknown), (unknown), Vibhor Jain, B.J. Thibeault, William J. Mitchell, M.J.W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, J. M. Fastenau, Amy W. K. Liu	8
4	Demonstration of In<inf>0.9</inf>Ga<inf>0.1</inf>As/GaAs<inf>0.18</inf>Sb<inf>0.82</inf> near broken-gap tunnel FET with I<inf>ON</inf>=740μA/μm, G<inf>M</inf>=70μS/μm and gigahertz switching performance at V<inf>Ds</inf>=0.5V 2013 ·(unknown), (unknown), Himanshu Madan, D. K. Mohata, (unknown), Nhan V. Nguyen, David J. Gundlach, Curt A. Richter, (unknown), Ke Wang, (unknown), J. M. Fastenau, Dmitri Loubychev, W. K. Liu, Vijay Narayanan, Suman Datta	37
5	InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced C_cb and increased RF cut‐off frequency 2013 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), (unknown), Vibhor Jain, (unknown), Ashish Baraskar, William J. Mitchell, B.J. Thibeault, M.J.W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, J. M. Fastenau, Amy W. K. Liu	1
6	Compressively strained InSb MOSFETs with high hole mobility for p-channel application 2013 ·Michael Barth, Ashish Agrawal, Ahmed I. Ali, J. M. Fastenau, Dmitri Loubychev, W. K. Liu, Suman Datta	4
7	1.0 THz f_max InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance 2011 ·Vibhor Jain, (unknown), (unknown), Ashish Baraskar, (unknown), B.J. Thibeault, M.J.W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, J. M. Fastenau, (unknown)	17
8	InGaAs/InP DHBTs demonstrating simultaneous ƒ τ /ƒ max ∼ 460/850 GHz in a refractory emitter process 2011 ·Vibhor Jain, (unknown), Ashish Baraskar, B.J. Thibeault, M.J.W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, J. M. Fastenau, (unknown)	0
9	Epitaxy ready 4" GaSb substrates: requirements for MBE grown type-II superlattice infrared detectors 2010 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), (unknown), (unknown), Dmitri Loubychev, J. M. Fastenau, Xing Gu, Amy W. K. Liu	3
10	InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$ 2010 ·IEEE Electron Device Letters ·Vibhor Jain, (unknown), Ashish Baraskar, B.J. Thibeault, M.J.W. Rodwell, Zach Griffith, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Yuh‐Renn Wu, J. M. Fastenau, (unknown)	16
11	High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology 2010 ·Vibhor Jain, (unknown), Ashish Baraskar, B.J. Thibeault, M.J.W. Rodwell, Zach Griffith, Miguel Urteaga, (unknown), Dmitri Loubychev, Andrew Snyder, Ying Wu, J. M. Fastenau, (unknown)	3
12	200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒ<inf>max</inf> ≫ 800 GHz and ƒ<inf>τ</inf> = 360 GHz 2009 ·(unknown), Zach Griffith, Vibhor Jain, B.J. Thibeault, M.J.W. Rodwell, Dmitri Loubychev, Andrew Snyder, (unknown), J. M. Fastenau, Amy W. K. Liu	13
13	Direct Growth of III-V Devices on Silicon 2008 ·MRS Proceedings ·(unknown), T.E. Kazior, Amy Liu, Dmitri Loubychev, J. M. Fastenau, Miguel Urteaga, Eugene A. Fitzgerald, Mayank T. Bulsara, David Clark, B. Brar, Wonill Ha, (unknown), Nicolas Daval, (unknown)	1
14	InGaAs/InP DHBTs with a 75nm Collector, 20nm base Demonstrating 544 GHz ft, BVCEO = 3.2V, and BVCBO = 3.4V 2006 ·Zach Griffith, M.J.W. Rodwell, Xiao-Ming Fang, Dmitri Loubychev, Ying Wu, J. M. Fastenau, (unknown)	5
15	Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process 2006 ·IEEE Electron Device Letters ·(unknown), Zach Griffith, C. Kadow, Uttam Singisetti, M.J.W. Rodwell, Xiao-Ming Fang, Dmitri Loubychev, Ying Wu, J. M. Fastenau, (unknown)	5
16	60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz f<sub>T</sub>, BV<sub>CEO</sub> = 2.5V, and BV<sub>CBO</sub> = 2.7V 2006 ·Zach Griffith, Erik Lind, M.J.W. Rodwell, Xiao-Ming Fang, Dmitri Loubychev, (unknown), J. M. Fastenau, (unknown)	2
17	InGaAs/InP DHBTs With 120-nm Collector Having Simultaneously High , GHz 2005 ·Zach Griffith, M.J.W. Rodwell, Dmitri Loubychev, (unknown), J. M. Fastenau, Amy W. K. Liu	4
18	InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz 2005 ·IEEE Electron Device Letters ·Zach Griffith, M.J.W. Rodwell, Xiao-Ming Fang, Dmitri Loubychev, Ying Wu, J. M. Fastenau, (unknown)	29
19	Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactor 2001 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·X. M. Fang, (unknown), Dmitri Loubychev, Yung‐Hsien Wu, (unknown), (unknown), (unknown), (unknown)	7
20	Electric-Field Gradients at Group-III Sites on GaAs and InAs (111)B Surfaces 2001 ·Hyperfine Interactions ·Gary L. Catchen, Dmitri Loubychev, R. Platzer	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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