Likun Shen

2.3k total citations · 1 hit paper
26 papers, 1.9k citations indexed

About

Likun Shen is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Likun Shen has authored 26 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Likun Shen's work include GaN-based semiconductor devices and materials (26 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Likun Shen is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (10 papers). Likun Shen collaborates with scholars based in United States, Japan and China. Likun Shen's co-authors include Umesh K. Mishra, Yifeng Wu, T.E. Kazior, S. Keller, Rongming Chu, N. Fichtenbaum, Steven P. DenBaars, David F. Brown, Zhe Chen and James S. Speck and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and IEEE Transactions on Electron Devices.

In The Last Decade

Likun Shen

24 papers receiving 1.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

GaN-Based RF Power Devices and Amplifiers

2008 1.4k citations Umesh K. Mishra, Likun Shen et al. Proceedings of the IEEE profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Likun Shen United States	12	1.7k	1.3k	706	461	419	26	1.9k
G. D. Via United States	25	1.2k 0.7×	1.2k 0.9×	508 0.7×	309 0.7×	366 0.9×	67	1.5k
Joff Derluyn Belgium	23	1.5k 0.9×	1.2k 0.9×	783 1.1×	352 0.8×	447 1.1×	79	1.7k
J. Gillespie United States	25	1.4k 0.8×	1.2k 1.0×	584 0.8×	320 0.7×	399 1.0×	79	1.7k
Ling Yang China	23	1.4k 0.8×	1.3k 1.0×	625 0.9×	461 1.0×	370 0.9×	154	1.8k
T.E. Kazior United States	17	1.9k 1.1×	2.0k 1.5×	657 0.9×	808 1.8×	475 1.1×	72	2.6k
Jungwoo Joh United States	20	2.1k 1.2×	1.8k 1.4×	663 0.9×	406 0.9×	390 0.9×	40	2.2k
M. Moore United States	11	1.5k 0.9×	1.3k 1.0×	488 0.7×	384 0.8×	271 0.6×	19	1.6k
Takehiro Yoshida Japan	22	1.0k 0.6×	789 0.6×	605 0.9×	250 0.5×	469 1.1×	56	1.3k
A. Koudymov United States	24	1.6k 0.9×	1.4k 1.1×	734 1.0×	310 0.7×	318 0.8×	53	1.8k
Farid Medjdoub France	28	2.3k 1.3×	1.8k 1.4×	1.1k 1.5×	575 1.2×	492 1.2×	113	2.5k

Countries citing papers authored by Likun Shen

Since Specialization

Citations

This map shows the geographic impact of Likun Shen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Likun Shen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Likun Shen more than expected).

Fields of papers citing papers by Likun Shen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Likun Shen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Likun Shen. The network helps show where Likun Shen may publish in the future.

Co-authorship network of co-authors of Likun Shen

This figure shows the co-authorship network connecting the top 25 collaborators of Likun Shen. A scholar is included among the top collaborators of Likun Shen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Likun Shen. Likun Shen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Neufeld, Carl J., et al.. (2022). (Invited) Advances in High Power, High Voltage, Reliable GaN Products for Multi Kilo-Watt Power Conversion Applications.. ECS Meeting Abstracts. MA2022-02(37). 1345–1345.

Wu, Yifeng, Likun Shen, L. McCarthy, et al.. (2020). 5000+ Wafers of 650 V Highly Reliable GaN HEMTs on Si Substrates: Wafer Breakage and Backside Contamination Results. 1–3.

Wu, Yifeng, Likun Shen, Peter Smith, et al.. (2019). 650 V Highly Reliable GaN HEMTs on Si Substrates over multiple generations: Expanding usage of a mature 150 mm Si Foundry. 1–5. 1 indexed citations

Kikkawa, T., Kenji Imanishi, Yifeng Wu, et al.. (2015). Commercialization and reliability of 600 V GaN power switches. 6C.1.1–6C.1.6. 29 indexed citations

Parikh, P., Yifeng Wu, & Likun Shen. (2013). Commercialization of high 600V GaN-on-silicon power HEMTs and diodes. 1–5. 25 indexed citations

Mishra, Umesh K., Likun Shen, T.E. Kazior, & Yifeng Wu. (2008). GaN-Based RF Power Devices and Amplifiers Gallium nitride power transistors can operate at millimeter wave and beyond to meet future needs of cell phones, satellites, and TV broadcasting.. Proceedings of the IEEE. 96(2). 287–305. 1 indexed citations

Chu, Rongming, C. Poblenz, Man Hoi Wong, et al.. (2008). Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF₄-Treatment. Applied Physics Express. 1. 61101–61101. 5 indexed citations

Chu, Rongming, Likun Shen, N. Fichtenbaum, et al.. (2008). V-Gate GaN HEMTs for X-Band Power Applications. IEEE Electron Device Letters. 29(9). 974–976. 57 indexed citations

Chu, Rongming, Likun Shen, N. Fichtenbaum, et al.. (2008). V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band. 205–206. 1 indexed citations

10.

Mishra, Umesh K., Likun Shen, T.E. Kazior, & Yifeng Wu. (2008). GaN-Based RF Power Devices and Amplifiers. Proceedings of the IEEE. 96(2). 287–305. 1412 indexed citations breakdown →

11.

Chakraborty, Arpan, Likun Shen, & Umesh K. Mishra. (2007). Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking. IEEE Transactions on Electron Devices. 54(5). 1083–1090. 9 indexed citations

12.

Poblenz, C., A. Corrion, Chang Soo Suh, et al.. (2007). Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz. IEEE Electron Device Letters. 28(11). 945–947. 26 indexed citations

13.

Pei, Yi, Likun Shen, Tomás Palacios, et al.. (2007). Study of the n⁺ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance. Japanese Journal of Applied Physics. 46(9L). L842–L842. 11 indexed citations

14.

Wong, Man Hoi, Yi Pei, Tomás Palacios, et al.. (2007). Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth. Applied Physics Letters. 91(23). 66 indexed citations

15.

Pei, Yi, Rongming Chu, N. Fichtenbaum, et al.. (2007). Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz. Japanese Journal of Applied Physics. 46(12L). L1087–L1087. 44 indexed citations

16.

Chu, Rongming, Likun Shen, S. Keller, et al.. (2007). Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs. 127–128. 5 indexed citations

17.

Moe, Craig, Hisashi Masui, Mathew C. Schmidt, et al.. (2005). Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide. Japanese Journal of Applied Physics. 44(4L). L502–L502. 21 indexed citations

18.

Chini, Alessandro, D. Buttari, R. Coffie, et al.. (2004). High performance AlGaN/GaN HEMTs with a field plated gate structure. IRIS UNIMORE (University of Modena and Reggio Emilia). 48. 434–435. 5 indexed citations

19.

Zhang, Naiqian, V. Mehrotra, Sriram Chandrasekaran, et al.. (2004). Large area GaN HEMT power devices for power electronic applications: switching and temperature characteristics. 1. 233–237. 48 indexed citations

20.

Heikman, S., et al.. (2004). HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE. International Journal of High Speed Electronics and Systems. 14(3). 847–852. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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