S. Shanfield

445 total citations
18 papers, 265 citations indexed

About

S. Shanfield is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Shanfield has authored 18 papers receiving a total of 265 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 7 papers in Condensed Matter Physics and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Shanfield's work include Radio Frequency Integrated Circuit Design (9 papers), Semiconductor materials and devices (8 papers) and GaN-based semiconductor devices and materials (7 papers). S. Shanfield is often cited by papers focused on Radio Frequency Integrated Circuit Design (9 papers), Semiconductor materials and devices (8 papers) and GaN-based semiconductor devices and materials (7 papers). S. Shanfield collaborates with scholars based in United States. S. Shanfield's co-authors include A. Platzker, Jong‐Chin Huang, Gordon Jackson, P. S. Lyman, W. E. Hoke, Sarah Bay, D. Atwood, K. Agatsuma, M. Hoenig and A. Montgomery and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Microwave Theory and Techniques and IEEE Electron Device Letters.

In The Last Decade

S. Shanfield

17 papers receiving 240 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. Shanfield United States	9	189	81	79	72	62	18	265
D. Bolze Germany	12	409 2.2×	143 1.8×	65 0.8×	57 0.8×	48 0.8×	47	478
Jesse B. Tucker United States	8	280 1.5×	78 1.0×	43 0.5×	85 1.2×	20 0.3×	28	330
D. Åberg Sweden	9	322 1.7×	82 1.0×	50 0.6×	13 0.2×	29 0.5×	28	345
L. Trombetta United States	9	311 1.6×	72 0.9×	94 1.2×	63 0.9×	22 0.4×	20	340
Taroh Inada Japan	12	294 1.6×	159 2.0×	69 0.9×	38 0.5×	28 0.5×	36	331
Jae Yeob Shim South Korea	10	202 1.1×	75 0.9×	249 3.2×	19 0.3×	111 1.8×	39	341
С. А. Шевченко Russia	9	184 1.0×	120 1.5×	177 2.2×	36 0.5×	16 0.3×	46	305
M. Hockly United Kingdom	9	240 1.3×	246 3.0×	91 1.2×	32 0.4×	12 0.2×	20	318
T. Wetteroth United States	7	218 1.2×	71 0.9×	89 1.1×	39 0.5×	15 0.2×	20	308
M. G. Rastegaeva Russia	11	269 1.4×	173 2.1×	37 0.5×	33 0.5×	19 0.3×	46	307

Countries citing papers authored by S. Shanfield

Since Specialization

Citations

This map shows the geographic impact of S. Shanfield's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Shanfield with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Shanfield more than expected).

Fields of papers citing papers by S. Shanfield

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Shanfield. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Shanfield. The network helps show where S. Shanfield may publish in the future.

Co-authorship network of co-authors of S. Shanfield

This figure shows the co-authorship network connecting the top 25 collaborators of S. Shanfield. A scholar is included among the top collaborators of S. Shanfield based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Shanfield. S. Shanfield is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

18 of 18 papers shown

Tkachenko, Y.A., et al.. (2005). Hot-electron-induced Electro-luminescence Of GaAs Field-effect And Bipolar Transistors. 1. 0_62–0_64. 1 indexed citations

Tkachenko, Y.A., C.J. Wei, James C. M. Hwang, et al.. (2005). Hot-electron-induced degradation of metal-semiconductor field-effect transistors. 259–262. 5 indexed citations

Shanfield, S., A. Platzker, T.E. Kazior, et al.. (2003). One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching. 639–641. 3 indexed citations

Shanfield, S., Fred Schindler, A. Platzker, et al.. (2003). A high linearity, high efficiency pseudomorphic HEMT. 207–210. 2 indexed citations

Huang, Jong‐Chin, et al.. (2002). The effect of channel dimensions on the millimeter-wave power performance of a pseudomorphic HEMT. 240. 177–180. 1 indexed citations

Wohlert, R., Ben Cole, Gordon Jackson, et al.. (2002). Ka-band GaAs HBT PIN diode switches and phase shifters. ii. 183–186. 9 indexed citations

Huang, Jong‐Chin, Gordon Jackson, S. Shanfield, et al.. (2002). An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications. 7. 713–716. 11 indexed citations

Tkachenko, Y.A., C.J. Wei, James C. M. Hwang, et al.. (2002). Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors. 115–118. 20 indexed citations

Platzker, A., et al.. (2002). A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier. 649–652. 9 indexed citations

10.

Platzker, A., et al.. (1993). Large periphery, high power pseudomorphic HEMTs. 351–353. 12 indexed citations

11.

Huang, Jong‐Chin, et al.. (1993). An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications. IEEE Transactions on Microwave Theory and Techniques. 41(5). 752–759. 62 indexed citations

12.

Huang, Jong‐Chin, A. Platzker, S. Shanfield, et al.. (1993). A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications. IEEE Electron Device Letters. 14(9). 456–458. 25 indexed citations

13.

Hoke, W. E., et al.. (1992). High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(3). 1066–1069. 7 indexed citations

14.

Shanfield, S., Mary Ann Miller, & R. L. Mozzi. (1989). Formation of Thick Metal Structures on GaAs MMICs Using Image Reversal Lithography and Evaporated Metal Deposition. Journal of The Electrochemical Society. 136(9). 2687–2690. 1 indexed citations

15.

Shanfield, S., et al.. (1984). Process Characterization of a Load-Locked, Reactive Ion Etching System. MRS Proceedings. 38.

16.

Shanfield, S. & Sarah Bay. (1984). Process Characterization of PSG and BPSG Plasma Deposition. Journal of The Electrochemical Society. 131(9). 2202–2203. 7 indexed citations

17.

Shanfield, S., et al.. (1983). Ion beam synthesis of cubic boron nitride. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 1(2). 323–325. 79 indexed citations

18.

Shanfield, S., K. Agatsuma, A. Montgomery, & M. Hoenig. (1981). Transient cooling in internally cooled, cabled superconductors (ICCS). IEEE Transactions on Magnetics. 17(5). 2019–2023. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact