T.C. Mele

443 citations

22 papers · 262 indexed · h-index 6

Co-authors: J.D. Hayden F.K. Baker C.D. Gunderson L.C. Parrillo J.R. Pfiester James W. Miller H.‐H. Tseng P.J. Tobin
Topics: Semiconductor materials and devices (20 papers)Advancements in Semiconductor Devices and Circuit Design (12 papers)Integrated Circuits and Semiconductor Failure Analysis (6 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Ceramics and Composites
Journals: Journal of Applied Physics Journal of The Electrochemical Society IEEE Transactions on Electron Devices
Partner nations: United States

In The Last Decade

T.C. Mele

21 papers receiving 247 citations

Peers

Countries citing papers authored by T.C. Mele

Since Specialization

Citations

This map shows the geographic impact of T.C. Mele's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.C. Mele with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.C. Mele more than expected).

Fields of papers citing papers by T.C. Mele

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.C. Mele. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.C. Mele. The network helps show where T.C. Mele may publish in the future.

Co-authorship network of co-authors of T.C. Mele

This figure shows the co-authorship network connecting the top 25 collaborators of T.C. Mele. A scholar is included among the top collaborators of T.C. Mele based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.C. Mele. T.C. Mele is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A high-performance sub-half micron CMOS technology for fast SRAMs 2003 ·J.D. Hayden,F.K. Baker,(unknown),(unknown),(unknown),(unknown),T. McNelly,T.C. Mele,(unknown),(unknown),L.C. Parrillo,W. M. Paulson,J.R. Pfiester,(unknown),Y.C. See,(unknown),(unknown),(unknown)	1
2	The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs 2003 ·F.K. Baker,J.R. Pfiester,T.C. Mele,H.‐H. Tseng,Philip J. Tobin,J.D. Hayden,C.D. Gunderson,L.C. Parrillo	4
3	A TiN strapped polysilicon gate cobalt salicide CMOS process 2002 ·J.R. Pfiester,T.C. Mele,(unknown),Robert E. Jones,(unknown),(unknown),C.D. Gunderson	0
4	A high performance 0.5 mu m BiCMOS triple polysilicon technology for 4 Mb fast SRAMs 2002 ·T.C. Mele,J.D. Hayden,(unknown),(unknown),Y.C. See,(unknown),(unknown),(unknown)	4
5	Re-evaluation of the benefits of postoxidation annealing on sub-100 /spl Aring/ gate oxide quality 1996 ·IEEE Electron Device Letters ·Sergio A. Ajuria,B. Maiti,Philip J. Tobin,T.C. Mele	3
6	Deposition of ultrathin silicon dioxide film from pyrolysis of tetraethoxysilane 1995 ·Journal of Applied Physics ·(unknown),Philip J. Tobin,T.C. Mele	3
7	Kinetic analysis of silicon oxidations in the thin regime by incremental growth 1994 ·Journal of Applied Physics ·Sergio A. Ajuria,(unknown),(unknown),T.C. Mele	11
8	Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's 1993 ·IEEE Transactions on Electron Devices ·J.D. Hayden,(unknown),A. Perera,T.C. Mele,(unknown),V. Kaushik,Craig Lage,Y.C. See	3
9	Comparison of Surface Charge Analysis and MOS C‐V as Techniques for Ionic Impurity Detection in Si / SiO2 Structures 1993 ·Journal of The Electrochemical Society ·Sergio A. Ajuria,J. T. Fitch,(unknown),T.C. Mele	4
10	A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs 1992 ·IEEE Transactions on Electron Devices ·J.D. Hayden,T.C. Mele,(unknown),David C. Burnett,(unknown),Craig Lage,F.K. Baker,(unknown),W. M. Paulson,(unknown),Y.C. See,(unknown),(unknown)	14
11	Use of screening and response surface experimental designs for development of a 0.5- mu m CMOS self-aligned titanium silicide process 1991 ·IEEE Transactions on Semiconductor Manufacturing ·Robert E. Jones,T.C. Mele	10
12	A high-performance half-micrometer generation CMOS technology for fast SRAMs 1991 ·IEEE Transactions on Electron Devices ·J.D. Hayden,F.K. Baker,(unknown),Robert E. Jones,(unknown),(unknown),T. McNelly,T.C. Mele,(unknown),B.-Y. Nguyen,L.C. Parrillo,W. M. Paulson,J.R. Pfiester,(unknown),Y.C. See,(unknown),(unknown),(unknown)	4
13	A cobalt salicide CMOS process with TiN-strapped polysilicon gates 1991 ·IEEE Electron Device Letters ·J.R. Pfiester,T.C. Mele,(unknown),Robert E. Jones,(unknown),(unknown),C.D. Gunderson	5
14	The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices 1990 ·IEEE Transactions on Electron Devices ·J.R. Pfiester,F.K. Baker,T.C. Mele,H.‐H. Tseng,P.J. Tobin,J.D. Hayden,James W. Miller,C.D. Gunderson,L.C. Parrillo	151
15	STEM‐EDX Dopant Profiling of S‐D Implants in Submicron FETs 1989 ·Journal of The Electrochemical Society ·(unknown),D. G. Ast,T.C. Mele,J.P. Krusius	1
16	High Resolution Trilayer Electron Beam Resist System Employing P[Mma/Maa] And Reliable Reactive Ion Etch Processes 1988 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·T.C. Mele,(unknown),J.P. Krusius	4
17	ChemInform Abstract: Anisotropic Reactive Ion Etching of MoSi2 and in situ Doped n+ and p+ Polysilicon Using Cl2 and BCl3. 1988 ·ChemInform ·T.C. Mele,S. Arney,J.P. Krusius,Noel C. MacDonald	1
18	Process integration issues for a 0.25 μm n-channel metal-oxide-semiconductor technology 1986 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·T.C. Mele,(unknown),J. Nulman,J.P. Krusius	3
19	Electrical characteristics of thin gate implanted MOS channels grown by rapid thermal processing 1985 ·J. Nulman,(unknown),T.C. Mele,J.P. Krusius	9
20	Selective and anisotropic reactive ion etch of LPCVD silicon nitride with CHF3 based gases 1984 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·T.C. Mele,J. Nulman,J.P. Krusius	21

About T.C. Mele

T.C. Mele is a scholar working on Electrical and Electronic Engineering, Bioengineering and Atomic and Molecular Physics, and Optics, having authored 22 papers that have together received 262 indexed citations. Recurring topics across this work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (249 citations), Atomic and Molecular Physics, and Optics (49 citations) and Ceramics and Composites (9 citations). T.C. Mele has collaborated with scholars based in United States. Frequent co-authors include J.D. Hayden, F.K. Baker, C.D. Gunderson, L.C. Parrillo, J.R. Pfiester, James W. Miller, H.‐H. Tseng, P.J. Tobin, J.P. Krusius and J. Nulman. Their work appears in journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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