Steven C. Shatas

564 total citations
26 papers, 445 citations indexed

About

Steven C. Shatas is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Steven C. Shatas has authored 26 papers receiving a total of 445 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Steven C. Shatas's work include Semiconductor materials and devices (13 papers), Silicon and Solar Cell Technologies (12 papers) and Silicon Nanostructures and Photoluminescence (11 papers). Steven C. Shatas is often cited by papers focused on Semiconductor materials and devices (13 papers), Silicon and Solar Cell Technologies (12 papers) and Silicon Nanostructures and Photoluminescence (11 papers). Steven C. Shatas collaborates with scholars based in United States and Israel. Steven C. Shatas's co-authors include Krishna C. Saraswat, Mehrdad M. Moslehi, H. J. Stein, Masoud Moslehi, S. K. Hahn, T. O. Sedgwick, Sebastian Mäder, R. Kalish, C. R. Helms and B. M. Ditchek and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Steven C. Shatas

26 papers receiving 418 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Steven C. Shatas United States 10 400 145 144 45 43 26 445
T. R. Cass United States 11 301 0.8× 163 1.1× 121 0.8× 39 0.9× 36 0.8× 20 365
R. Bisaro France 9 268 0.7× 95 0.7× 222 1.5× 30 0.7× 41 1.0× 27 366
L. Krausbauer Germany 8 337 0.8× 77 0.5× 252 1.8× 48 1.1× 40 0.9× 12 410
L. M. Ephrath United States 11 356 0.9× 78 0.5× 111 0.8× 74 1.6× 37 0.9× 16 400
M. Arienzo United States 12 436 1.1× 190 1.3× 175 1.2× 16 0.4× 22 0.5× 31 478
T. Tsurushima Japan 13 356 0.9× 191 1.3× 101 0.7× 122 2.7× 16 0.4× 37 424
K. Tone United States 14 478 1.2× 170 1.2× 96 0.7× 19 0.4× 48 1.1× 39 545
Tianxing Ma United States 11 340 0.8× 100 0.7× 124 0.9× 44 1.0× 30 0.7× 23 449
R.E. Proano United States 5 525 1.3× 252 1.7× 186 1.3× 20 0.4× 26 0.6× 8 591
A. Mitwalsky Germany 10 219 0.5× 96 0.7× 128 0.9× 46 1.0× 34 0.8× 21 284

Countries citing papers authored by Steven C. Shatas

Since Specialization
Citations

This map shows the geographic impact of Steven C. Shatas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steven C. Shatas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steven C. Shatas more than expected).

Fields of papers citing papers by Steven C. Shatas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steven C. Shatas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steven C. Shatas. The network helps show where Steven C. Shatas may publish in the future.

Co-authorship network of co-authors of Steven C. Shatas

This figure shows the co-authorship network connecting the top 25 collaborators of Steven C. Shatas. A scholar is included among the top collaborators of Steven C. Shatas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Steven C. Shatas. Steven C. Shatas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Russell, Stephen W., et al.. (1995). Rapid thermal nitridation of thin chromium films. Applied Surface Science. 90(4). 455–463. 7 indexed citations
2.
Hahn, S., H. J. Stein, Steven C. Shatas, & F. A. Ponce. (1992). Thermal donor formation and annihilation in oxygen-implanted float-zone silicon. Journal of Applied Physics. 72(5). 1758–1765. 9 indexed citations
3.
Hahn, S., et al.. (1988). Effects of high carbon concentration upon oxygen precipitation and related phenomena in CzSi. Journal of Applied Physics. 64(2). 849–855. 14 indexed citations
4.
Moslehi, Mehrdad M., Man Wong, Krishna C. Saraswat, & Steven C. Shatas. (1987). In-Situ MOS Gate Engineering in a Novel Rapid Thermal/Plasma Multiprocessing Reactor. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 87. 21–22. 5 indexed citations
5.
Moslehi, Masoud, Steven C. Shatas, Krishna C. Saraswat, & J.D. Meindl. (1987). Interfacial and breakdown characteristics of MOS devices with rapidly grown ultrathin SiO2gate insulators. IEEE Transactions on Electron Devices. 34(6). 1407–1410. 18 indexed citations
6.
Stein, H. J., S. K. Hahn, & Steven C. Shatas. (1987). Reply to ‘‘Comment on ‘Rapid thermal annealing and regrowth of thermal donors’ ’’ [J. Appl. Phys. 5 9, 3495 (1986)]. Journal of Applied Physics. 61(7). 2682–2683. 1 indexed citations
7.
Moslehi, Masoud, Steven C. Shatas, & Krishna C. Saraswat. (1986). Rapid Thermal Oxidation and Nitridation of Silicon,. Defense Technical Information Center (DTIC). 7 indexed citations
8.
Stein, H. J., S. K. Hahn, & Steven C. Shatas. (1986). Rapid thermal annealing and regrowth of thermal donors in silicon. Journal of Applied Physics. 59(10). 3495–3502. 48 indexed citations
9.
Moslehi, Mehrdad M., Krishna C. Saraswat, & Steven C. Shatas. (1986). Rapid Thermal Growth Of Thin Insulators On Si (Invited). Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 623. 92–92. 4 indexed citations
10.
Moslehi, Masoud, et al.. (1985). Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide). Journal of The Electrochemical Society. 132(9). 2189–2197. 50 indexed citations
11.
Stein, H. J., S. K. Hahn, & Steven C. Shatas. (1985). Thermal Donor Removal by Rapid Thermal Annealing: Infrared Absorption. MRS Proceedings. 46. 3 indexed citations
12.
Hahn, S., Steven C. Shatas, & H. J. Stein. (1985). Effects of Thermal Donor Generation and Annihilation Upon Oxygen Precipitation. MRS Proceedings. 59. 4 indexed citations
13.
Kirillov, D., J. L. Merz, R. Kalish, & Steven C. Shatas. (1985). Luminescence study of rapid lamp annealing of Si-implanted InP. Journal of Applied Physics. 57(2). 531–536. 16 indexed citations
14.
Moslehi, Mehrdad M., Krishna C. Saraswat, & Steven C. Shatas. (1985). Rapid thermal nitridation of SiO2 for nitroxide thin dielectrics. Applied Physics Letters. 47(10). 1113–1115. 71 indexed citations
15.
Moslehi, Mehrdad M., Steven C. Shatas, & Krishna C. Saraswat. (1985). Thin SiO2 insulators grown by rapid thermal oxidation of silicon. Applied Physics Letters. 47(12). 1353–1355. 57 indexed citations
16.
Ditchek, B. M., et al.. (1985). Direct Silicidation of Co on Si by Rapid Thermal Annealing. MRS Proceedings. 52. 7 indexed citations
17.
Kalish, R., T. O. Sedgwick, Sebastian Mäder, & Steven C. Shatas. (1984). Transient enhanced diffusion in arsenic-implanted short time annealed silicon. Applied Physics Letters. 44(1). 107–109. 52 indexed citations
18.
Shih, Yih-Cheng, J. Washburn, & Steven C. Shatas. (1984). Effect Of Heating Rate End Annealing Temperature On Twin Formation In As + Implanted (lll) Silicon. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 463. 93–93. 2 indexed citations
19.
Molnár, Bálint, et al.. (1983). Comparison of Heat-Pulse and Furnace Isothermal Anneals of Be Implanted InP. MRS Proceedings. 27. 8 indexed citations
20.
Sedgwick, T. O., R. Kalish, Sebastian Mäder, & Steven C. Shatas. (1983). Short Time annealing of As and B Ion Implanted Si using Tungsten-Halogen Lamps. MRS Proceedings. 23. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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