K.H. Zaininger

878 total citations
31 papers, 652 citations indexed

About

K.H. Zaininger is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K.H. Zaininger has authored 31 papers receiving a total of 652 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 9 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K.H. Zaininger's work include Semiconductor materials and devices (18 papers), Silicon and Solar Cell Technologies (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). K.H. Zaininger is often cited by papers focused on Semiconductor materials and devices (18 papers), Silicon and Solar Cell Technologies (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). K.H. Zaininger collaborates with scholars based in United States. K.H. Zaininger's co-authors include G. Warfield, A. G. Revesz, A. Waxman, Andrew Holmes‐Siedle, M. T. Duffy, S.R. Hofstein, Chih-Chun Wang, G. W. Cullen, R. J. Evans and F.P. Heiman and has published in prestigious journals such as Applied Physics Letters, Proceedings of the IEEE and Journal of The Electrochemical Society.

In The Last Decade

K.H. Zaininger

29 papers receiving 558 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K.H. Zaininger United States 15 587 225 189 47 34 31 652
Hidejiro Miki Japan 11 329 0.6× 179 0.8× 254 1.3× 84 1.8× 19 0.6× 29 471
R R Varma United Kingdom 11 367 0.6× 287 1.3× 124 0.7× 20 0.4× 11 0.3× 15 449
T. Hariu Japan 14 386 0.7× 248 1.1× 269 1.4× 149 3.2× 15 0.4× 63 563
Masanori Inada Japan 10 519 0.9× 248 1.1× 447 2.4× 77 1.6× 20 0.6× 21 739
J. T. Fitch United States 11 507 0.9× 107 0.5× 292 1.5× 61 1.3× 48 1.4× 29 575
S. Guerri Italy 11 340 0.6× 199 0.9× 128 0.7× 45 1.0× 31 0.9× 25 444
A. Zur United States 6 299 0.5× 326 1.4× 219 1.2× 60 1.3× 14 0.4× 9 556
Paihung Pan United States 12 379 0.6× 80 0.4× 181 1.0× 84 1.8× 20 0.6× 18 456
A. Vapaille France 10 798 1.4× 587 2.6× 195 1.0× 41 0.9× 13 0.4× 16 840
E. de Frésart United States 15 805 1.4× 329 1.5× 295 1.6× 33 0.7× 72 2.1× 24 924

Countries citing papers authored by K.H. Zaininger

Since Specialization
Citations

This map shows the geographic impact of K.H. Zaininger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.H. Zaininger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.H. Zaininger more than expected).

Fields of papers citing papers by K.H. Zaininger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.H. Zaininger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.H. Zaininger. The network helps show where K.H. Zaininger may publish in the future.

Co-authorship network of co-authors of K.H. Zaininger

This figure shows the co-authorship network connecting the top 25 collaborators of K.H. Zaininger. A scholar is included among the top collaborators of K.H. Zaininger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.H. Zaininger. K.H. Zaininger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kosonocky, Walter F. & K.H. Zaininger. (1979). Application of CCDs to memories. 177–239. 1 indexed citations
2.
Zaininger, K.H., et al.. (1970). Permanent Radiation Effects in Hardened Al2O3 MOS Integrated Circuits. IEEE Transactions on Nuclear Science. 17(6). 27–32. 7 indexed citations
3.
Holmes‐Siedle, Andrew, et al.. (1969). DIGITAL LOGIC FOR RADIATION ENVIRONMENTS: A COMPARISON OF METAL/OXIDE/ SEMICONDUCTOR AND BIPOLAR TECHNOLOGIES.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 2 indexed citations
4.
Duffy, M. T., et al.. (1969). Preparation, Optical and Dielectric Properties of Vapor-Deposited Niobium Oxide Thin Films. Journal of The Electrochemical Society. 116(2). 234–234. 43 indexed citations
5.
Zaininger, K.H. & Chih-Chun Wang. (1969). Thin film dielectric materials for microelectronics. Proceedings of the IEEE. 57(9). 1564–1570. 12 indexed citations
6.
Zaininger, K.H. & A. Waxman. (1969). Radiation resistance of Al2O3MOS devices. IEEE Transactions on Electron Devices. 16(4). 333–338. 62 indexed citations
7.
Holmes‐Siedle, Andrew & K.H. Zaininger. (1968). The Physics of Failure of MIS Devices Under Radiation. IEEE Transactions on Reliability. R-17(1). 34–44. 13 indexed citations
8.
Zaininger, K.H. & Andrew Holmes‐Siedle. (1967). SURVEY OF RADIATION EFFECTS IN METAL--INSULATOR--SEMICONDUCTOR DEVICES.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 16 indexed citations
9.
Zaininger, K.H.. (1966). The effect of high energy electron bombardment on MOS structures. IEEE Transactions on Electron Devices. ED-13(8/9). 672–673. 1 indexed citations
10.
Zaininger, K.H.. (1966). Degradation of Mis Devices Under Electron Bombardment. 328–348. 1 indexed citations
11.
Zaininger, K.H.. (1966). ELECTRON BOMBARDMENT OF MOS CAPACITORS. Applied Physics Letters. 8(6). 140–142. 56 indexed citations
12.
Revesz, A. G., K.H. Zaininger, & R. J. Evans. (1966). DEVIATIONS FROM PARABOLIC GROWTH IN THE THERMAL OXIDATION OF SILICON. Applied Physics Letters. 8(3). 57–58. 9 indexed citations
13.
Zaininger, K.H.. (1966). Irradiation of MIS Capacitors with High Energy Electrons. IEEE Transactions on Nuclear Science. 13(6). 237–247. 55 indexed citations
14.
Zaininger, K.H. & G. Warfield. (1965). Limitations of the MOS capacitance method for the determination of semiconductor surface properties. IEEE Transactions on Electron Devices. 12(4). 179–193. 106 indexed citations
15.
Hofstein, S.R., K.H. Zaininger, & G. Warfield. (1964). Frequency response of the surface inversion layer in silicon. Proceedings of the IEEE. 52(8). 971–972. 21 indexed citations
16.
Revesz, A. G. & K.H. Zaininger. (1964). Étude de certaines propriétés de couches de SiO2 sur support de silicium. Journal de physique. 25(1-2). 66–69. 10 indexed citations
17.
Heiman, F.P., K.H. Zaininger, & G. Warfield. (1964). Determination of conductivity type from MOS-capacitance measurements. Proceedings of the IEEE. 52(7). 863–864. 5 indexed citations
18.
Zaininger, K.H. & G. Warfield. (1964). Hydrogen induced surface states at a Si–SiO2interface. Proceedings of the IEEE. 52(8). 972–973. 11 indexed citations
19.
Revesz, A. G. & K.H. Zaininger. (1963). Discussion of “The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam” [B. E. Deal (pp. 527–533, Vol. 110, No. 6)]. Journal of The Electrochemical Society. 110(12). 1292–1292. 1 indexed citations
20.
Revesz, A. G. & K.H. Zaininger. (1963). An Amorphous Modification of Gallium‐Arsenic (V) Oxide. Journal of the American Ceramic Society. 46(12). 606–606. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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