X.W. Wang

427 total citations
17 papers, 319 citations indexed

About

X.W. Wang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, X.W. Wang has authored 17 papers receiving a total of 319 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 3 papers in Condensed Matter Physics. Recurrent topics in X.W. Wang's work include Semiconductor materials and devices (12 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). X.W. Wang is often cited by papers focused on Semiconductor materials and devices (12 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). X.W. Wang collaborates with scholars based in United States, China and South Korea. X.W. Wang's co-authors include T.P. Ma, L. J. Guido, Steven P. DenBaars, Umesh K. Mishra, N.-Q. Zhang, Brendan Moran, Tso‐Ping Ma, H.‐H. Tseng, P.J. Tobin and Wei He and has published in prestigious journals such as Nature Communications, Water Research and Science Advances.

In The Last Decade

X.W. Wang

16 papers receiving 310 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
X.W. Wang United States 9 260 141 91 75 52 17 319
R. Zhang China 12 108 0.4× 143 1.0× 102 1.1× 148 2.0× 101 1.9× 26 309
Jingdi Lu China 9 65 0.3× 113 0.8× 174 1.9× 149 2.0× 101 1.9× 21 287
Pengfa Xu China 11 152 0.6× 102 0.7× 192 2.1× 237 3.2× 210 4.0× 18 404
Tianyi Ma China 8 81 0.3× 45 0.3× 78 0.9× 68 0.9× 153 2.9× 16 213
S. Kishimoto Japan 4 239 0.9× 93 0.7× 49 0.5× 237 3.2× 116 2.2× 5 362
Anthony Tylan‐Tyler United States 5 135 0.5× 82 0.6× 163 1.8× 304 4.1× 70 1.3× 9 343
S. Çalışkan Türkiye 12 146 0.6× 37 0.3× 133 1.5× 238 3.2× 67 1.3× 37 321
Ching‐Ray Chang Taiwan 8 93 0.4× 73 0.5× 143 1.6× 227 3.0× 169 3.3× 16 348
G. Kadim Morocco 11 86 0.3× 106 0.8× 223 2.5× 197 2.6× 43 0.8× 25 337

Countries citing papers authored by X.W. Wang

Since Specialization
Citations

This map shows the geographic impact of X.W. Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X.W. Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X.W. Wang more than expected).

Fields of papers citing papers by X.W. Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X.W. Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X.W. Wang. The network helps show where X.W. Wang may publish in the future.

Co-authorship network of co-authors of X.W. Wang

This figure shows the co-authorship network connecting the top 25 collaborators of X.W. Wang. A scholar is included among the top collaborators of X.W. Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X.W. Wang. X.W. Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
2.
Yan, Yu, Daniel J. Rivera, Weiyi Pan, et al.. (2025). Tuning nitrate reduction reaction selectivity via selective adsorption in electrified membranes. 2(6). 379–390. 7 indexed citations
3.
Wang, X.W., Lea R. Winter, Xuanhao Wu, et al.. (2025). Intensified atomic utilization efficiency of single-atom catalysts for nitrate conversion via electrified nanoporous membrane. Science Advances. 11(28). eads6943–eads6943. 4 indexed citations
4.
Wu, Xuanhao, X.W. Wang, Yunshuo Wu, et al.. (2025). Bilayer electrified-membrane with pair-atom tin catalysts for near-complete conversion of low concentration nitrate to dinitrogen. Nature Communications. 16(1). 1122–1122. 16 indexed citations
5.
6.
Passlack, M., Ravi Droopad, Zhen Yu, et al.. (2008). Screening of Oxide/GaAs Interfaces for MOSFET Applications. IEEE Electron Device Letters. 29(11). 1181–1183. 24 indexed citations
7.
Ma, T.P., H. Bu, X.W. Wang, et al.. (2005). Special reliability features for Hf-based high-/spl kappa/ gate dielectrics. IEEE Transactions on Device and Materials Reliability. 5(1). 36–44. 43 indexed citations
8.
Wang, X.W., et al.. (2004). Effect of polySi/high-K interfce on device reliability. 324–325. 1 indexed citations
9.
Wang, X.W., et al.. (2003). High temperature (450°C) reliable NMISFET's on p-type 6H-SiC. 209–212. 1 indexed citations
10.
Wang, X.W., Ying Shi, T.P. Ma, et al.. (2002). Extending gate dielectric scaling limit by use of nitride or oxynitride. 109–110. 8 indexed citations
11.
Balasiński, A., et al.. (2002). Mobility and reliability improvements of fluorinated gate oxide for VLSI technology. 44–48. 2 indexed citations
12.
Wang, X.W., et al.. (2002). Ultra-thin silicon nitride films on Si by jet vapor deposition. 13. 49–52. 2 indexed citations
13.
Zhang, N.-Q., Brendan Moran, Steven P. DenBaars, et al.. (2001). Kilovolt AlGaN/GaN HEMTs as Switching Devices. physica status solidi (a). 188(1). 213–217. 58 indexed citations
14.
Guido, L. J., et al.. (2001). High-quality oxide/nitride/oxide gate insulator for GaN MIS structures. IEEE Transactions on Electron Devices. 48(3). 458–464. 102 indexed citations
15.
Wang, X.W., et al.. (2000). High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric. IEEE Transactions on Electron Devices. 47(2). 458–463. 17 indexed citations
16.
Brady, David J., Glenn W. Gale, Howard R. Huff, et al.. (1999). Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique. MRS Proceedings. 592. 1 indexed citations
17.
Lu, Wu, X.W. Wang, R. Hammond, et al.. (1999). p-Type SiGe transistors with low gate leakage using SiN gate dielectric. IEEE Electron Device Letters. 20(10). 514–516. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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