Austin Hickman

1.5k total citations · 1 hit paper
22 papers, 1.1k citations indexed

About

Austin Hickman is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Austin Hickman has authored 22 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Austin Hickman's work include GaN-based semiconductor devices and materials (19 papers), Radio Frequency Integrated Circuit Design (11 papers) and Ga2O3 and related materials (9 papers). Austin Hickman is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Radio Frequency Integrated Circuit Design (11 papers) and Ga2O3 and related materials (9 papers). Austin Hickman collaborates with scholars based in United States, Japan and Italy. Austin Hickman's co-authors include Debdeep Jena, Huili Grace Xing, Reet Chaudhuri, Samuel James Bader, Kazuki Nomoto, Zhi Guo, Akito Kuramata, Xufei Wu, Takekazu Masui and Masataka Higashiwaki and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

Austin Hickman

21 papers receiving 1.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Anisotropic thermal conductivity in single crystal β-gallium oxide

2015 430 citations Zhi Guo, Amit Verma et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by Austin Hickman

Since Specialization

Citations

This map shows the geographic impact of Austin Hickman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Austin Hickman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Austin Hickman more than expected).

Fields of papers citing papers by Austin Hickman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Austin Hickman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Austin Hickman. The network helps show where Austin Hickman may publish in the future.

Co-authorship network of co-authors of Austin Hickman

This figure shows the co-authorship network connecting the top 25 collaborators of Austin Hickman. A scholar is included among the top collaborators of Austin Hickman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Austin Hickman. Austin Hickman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation 2025 ·Applied Physics Express ·Reet Chaudhuri, (unknown), Antonio T. Lucero, Austin Hickman, (unknown), Debdeep Jena, Huili Grace Xing, Ko‐Tao Lee	0
2	AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz 2025 ·Applied Physics Express ·Kazuki Nomoto, Joseph Casamento, (unknown), Lei Li, Hyunjea Lee, (unknown), Austin Hickman, Takuya Maeda, Jimy Encomendero, Ved Gund, T. Vasen, (unknown), (unknown), James C. M. Hwang, Debdeep Jena, Huili Grace Xing	11
3	N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates 2023 ·Applied Physics Letters ·(unknown), Zexuan Zhang, Jimy Encomendero, (unknown), Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing	26
4	RF operation of AlN/Al_0.25Ga_0.75N/AlN HEMTs with f _T/f _max of 67/166 GHz 2023 ·Applied Physics Express ·(unknown), (unknown), Austin Hickman, Lei Li, Reet Chaudhuri, Yong-Jin Cho, James C. M. Hwang, Debdeep Jena, Huili Grace Xing	6
5	2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC 2023 ·physica status solidi (a) ·Austin Hickman, Reet Chaudhuri, Lei Li, Kazuki Nomoto, Neil Moser, Michael Elliott, Matthew Guidry, K. Shinohara, James C. M. Hwang, Huili Grace Xing, Debdeep Jena	7
6	AlN/AlGaN/AlN quantum well channel HEMTs 2023 ·Applied Physics Letters ·(unknown), (unknown), Austin Hickman, Reet Chaudhuri, Yong-Jin Cho, Huili Grace Xing, Debdeep Jena	14
7	AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality 2023 ·Joseph Casamento, Kazuki Nomoto, (unknown), Hyunjea Lee, (unknown), Lei Li, Austin Hickman, Takuya Maeda, Yu‐Tsun Shao, Jimy Encomendero, Ved Gund, T. Vasen, (unknown), (unknown), David A. Muller, Huili Grace Xing, Debdeep Jena	6
8	First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates 2022 ·(unknown), Zexuan Zhang, (unknown), Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing	1
9	Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures 2022 ·Applied Physics Letters ·Xiaopeng Wang, (unknown), Reet Chaudhuri, Austin Hickman, (unknown), Kazuki Nomoto, Huili Grace Xing, Debdeep Jena, Marco Farina, James C. M. Hwang	6
10	Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures 2022 ·APL Materials ·(unknown), Reet Chaudhuri, Austin Hickman, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena	34
11	FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors 2022 ·2022 International Electron Devices Meeting (IEDM) ·Joseph Casamento, Kazuki Nomoto, (unknown), (unknown), (unknown), Ling Li, Austin Hickman, Takuya Maeda, Jimy Encomendero, Ved Gund, Amit Lal, James C. M. Hwang, Huili Grace Xing, Debdeep Jena	31
12	Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz 2021 ·Austin Hickman, Reet Chaudhuri, Neil Moser, Michael Elliott, Kazuki Nomoto, Lei Li, James C. M. Hwang, Huili Grace Xing, Debdeep Jena	7
13	In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors 2021 ·physica status solidi (a) ·Reet Chaudhuri, Austin Hickman, (unknown), Joseph Casamento, Huili Grace Xing, Debdeep Jena	14
14	GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz 2020 ·IEEE Electron Device Letters ·Lei Li, Kazuki Nomoto, Ming Pan, Wenshen Li, Austin Hickman, J. N. Miller, Kevin Lee, Zongyang Hu, Samuel James Bader, Soo Min Lee, James C. M. Hwang, Debdeep Jena, Huili Grace Xing	89
15	Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices 2020 ·IEEE Transactions on Electron Devices ·Samuel James Bader, Hyunjea Lee, Reet Chaudhuri, (unknown), Austin Hickman, Alyosha Molnar, Huili Grace Xing, Debdeep Jena, Han Wui Then, Nadim Chowdhury, Tomás Palacios	106
16	First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz 2020 ·IEEE Journal of the Electron Devices Society ·Austin Hickman, Reet Chaudhuri, Lei Li, Kazuki Nomoto, Samuel James Bader, James C. M. Hwang, Huili Grace Xing, Debdeep Jena	64
17	Bottom tunnel junction blue light-emitting field-effect transistors 2020 ·Applied Physics Letters ·(unknown), (unknown), Kazuki Nomoto, Austin Hickman, (unknown), Vladimir Protasenko, Huili Grace Xing, Debdeep Jena	12
18	High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs 2019 ·IEEE Electron Device Letters ·Austin Hickman, Reet Chaudhuri, Samuel James Bader, Kazuki Nomoto, Kevin Lee, Huili Grace Xing, Debdeep Jena	104
19	GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current 2019 ·Samuel James Bader, Reet Chaudhuri, Austin Hickman, Kazuki Nomoto, (unknown), Han Wui Then, Huili Grace Xing, Debdeep Jena	29
20	Anisotropic thermal conductivity in single crystal β-gallium oxide breakdown → 2015 ·Applied Physics Letters ·Zhi Guo, Amit Verma, Xufei Wu, (unknown), Austin Hickman, Takekazu Masui, Akito Kuramata, Masataka Higashiwaki, Debdeep Jena, Tengfei Luo	430

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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