Peng Cui

874 total citations
64 papers, 676 citations indexed

About

Peng Cui is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Peng Cui has authored 64 papers receiving a total of 676 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 25 papers in Condensed Matter Physics and 24 papers in Materials Chemistry. Recurrent topics in Peng Cui's work include GaN-based semiconductor devices and materials (24 papers), Semiconductor materials and devices (18 papers) and Ga2O3 and related materials (14 papers). Peng Cui is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Semiconductor materials and devices (18 papers) and Ga2O3 and related materials (14 papers). Peng Cui collaborates with scholars based in China, United States and Malaysia. Peng Cui's co-authors include Yuping Zeng, Fan Yang, Guangyang Lin, Jie Tang, Haihong Wu, Mingyuan He, Jie Zhang, Meng Jia, Chengbu Liu and Lars Gundlach and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Peng Cui

56 papers receiving 658 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Peng Cui China	14	297	234	229	140	137	64	676
Jiahui Li China	15	369 1.2×	401 1.7×	107 0.5×	91 0.7×	57 0.4×	40	874
Roksana Tonny Rashid Canada	16	352 1.2×	419 1.8×	272 1.2×	65 0.5×	202 1.5×	26	926
Hyunsoo Lee South Korea	12	311 1.0×	381 1.6×	69 0.3×	41 0.3×	242 1.8×	43	706
Xuan Shen China	16	887 3.0×	812 3.5×	134 0.6×	113 0.8×	413 3.0×	33	1.6k
Wardhana Aji Sasangka Singapore	12	973 3.3×	478 2.0×	123 0.5×	41 0.3×	137 1.0×	30	1.3k
Jungmin Park South Korea	16	491 1.7×	382 1.6×	33 0.1×	146 1.0×	126 0.9×	62	913
A. Pawlis Germany	12	282 0.9×	307 1.3×	57 0.2×	76 0.5×	70 0.5×	26	748
Matthias Eltschka Switzerland	8	123 0.4×	261 1.1×	110 0.5×	61 0.4×	135 1.0×	8	650
Zhaozhao Zhu China	20	525 1.8×	346 1.5×	97 0.4×	24 0.2×	233 1.7×	82	1.1k
Zameer Hussain Shah China	13	79 0.3×	409 1.7×	120 0.5×	99 0.7×	41 0.3×	23	599

Countries citing papers authored by Peng Cui

Since Specialization

Citations

This map shows the geographic impact of Peng Cui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peng Cui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peng Cui more than expected).

Fields of papers citing papers by Peng Cui

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peng Cui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peng Cui. The network helps show where Peng Cui may publish in the future.

Co-authorship network of co-authors of Peng Cui

This figure shows the co-authorship network connecting the top 25 collaborators of Peng Cui. A scholar is included among the top collaborators of Peng Cui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Peng Cui. Peng Cui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chen, Fu, Yang Liu, Guang Yang, et al.. (2024). A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors. Solid-State Electronics. 220. 108991–108991. 1 indexed citations

Cui, Peng, et al.. (2024). Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors. Micromachines. 15(9). 1148–1148.

Chen, Siheng, Peng Cui, Kuan Yew Cheong, et al.. (2024). Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing. Solid-State Electronics. 213. 108861–108861. 4 indexed citations

Lin, Guangyang, Yuying Zhang, Peng Cui, et al.. (2024). Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy. Optical Materials. 149. 114987–114987. 3 indexed citations

Cui, Peng, et al.. (2023). Endoscopic Suture With Chemocauterization: An Effective Treatment of Congenital Pyriform Sinus Fistula. Otolaryngology. 169(6). 1624–1630. 1 indexed citations

Lin, Guangyang, et al.. (2023). Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing. Vacuum. 210. 111868–111868. 11 indexed citations

Cui, Peng, Meng Jia, Hang Chen, et al.. (2021). InAlN/GaN HEMT on Si With fmax = 270 GHz. IEEE Transactions on Electron Devices. 68(3). 994–999. 41 indexed citations

Zhang, Jie, Meng Jia, Maria Gabriela Sales, et al.. (2021). Impact of ZrO₂ Dielectrics Thickness on Electrical Performance of TiO₂ Thin Film Transistors with Sub-2 V Operation. ACS Applied Electronic Materials. 3(12). 5483–5495. 19 indexed citations

Zhang, Jie, Yuying Zhang, Peng Cui, et al.. (2021). One-Volt TiO₂ Thin Film Transistors With Low-Temperature Process. IEEE Electron Device Letters. 42(4). 521–524. 12 indexed citations

10.

Lin, Guangyang, Peng Cui, Tao Wang, et al.. (2021). Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching. IEEE Transactions on Nanotechnology. 20. 846–851. 6 indexed citations

11.

Lin, Guangyang, Zhiwei Huang, Chunyu Yu, et al.. (2020). Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO ₂ /Si substrate. Semiconductor Science and Technology. 35(9). 95016–95016. 1 indexed citations

12.

Cui, Peng, Guangyang Lin, Jie Zhang, & Yuping Zeng. (2020). Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs. IEEE Electron Device Letters. 41(8). 1185–1188. 12 indexed citations

13.

Zhang, Jie, Guangyang Lin, Peng Cui, et al.. (2020). Enhancement-/Depletion-Mode TiO₂ Thin-Film Transistors via O₂/N₂ Preannealing. IEEE Transactions on Electron Devices. 67(6). 2346–2351. 12 indexed citations

14.

Zhao, Meng‐Qiang, Meng Jia, Peng Cui, et al.. (2020). Improving the electrical performance of monolayer top-gated MoS ₂ transistors by post bis(trifluoromethane) sulfonamide treatment. Journal of Physics D Applied Physics. 53(41). 415106–415106. 5 indexed citations

15.

Cui, Peng, Jie Zhang, Meng Jia, et al.. (2020). InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO ₂ as gate dielectric. Japanese Journal of Applied Physics. 59(2). 20901–20901. 12 indexed citations

16.

Cui, Peng, et al.. (2019). The effect of negative substrate bias on the electrical characteristics of InAlN/GaN MIS-HEMTs. Journal of Physics D Applied Physics. 52(46). 465104–465104. 7 indexed citations

17.

Lin, Guangyang, Meng‐Qiang Zhao, Meng Jia, et al.. (2019). Performance enhancement of monolayer MoS ₂ transistors by atomic layer deposition of high- k dielectric assisted by Al ₂ O ₃ seed layer. Journal of Physics D Applied Physics. 53(10). 105103–105103. 12 indexed citations

18.

Cui, Peng, Jie Zhang, Tzu‐Yi Yang, et al.. (2019). Effects of N ₂ O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors. Journal of Physics D Applied Physics. 53(6). 65103–65103. 12 indexed citations

19.

Zhang, Jie, Maria Gabriela Sales, Guangyang Lin, et al.. (2019). Ultrathin-Body TiO₂ Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O₂ Annealing. IEEE Electron Device Letters. 40(9). 1463–1466. 11 indexed citations

20.

Cui, Peng, Yuanjie Lv, Huan Liu, et al.. (2018). Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors. Scientific Reports. 8(1). 983–983. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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