Miles Lindquist

586 total citations
20 papers, 479 citations indexed

About

Miles Lindquist is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Miles Lindquist has authored 20 papers receiving a total of 479 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 10 papers in Materials Chemistry and 8 papers in Condensed Matter Physics. Recurrent topics in Miles Lindquist's work include GaN-based semiconductor devices and materials (8 papers), Radio Frequency Integrated Circuit Design (7 papers) and Ga2O3 and related materials (7 papers). Miles Lindquist is often cited by papers focused on GaN-based semiconductor devices and materials (8 papers), Radio Frequency Integrated Circuit Design (7 papers) and Ga2O3 and related materials (7 papers). Miles Lindquist collaborates with scholars based in United States, Germany and United Kingdom. Miles Lindquist's co-authors include Kelson D. Chabak, Andrew J. Green, Dennis E. Walker, Gregg H. Jessen, Neil Moser, Antonio Crespo, Nicholas C. Miller, Kevin Leedy, Robert Fitch and Kyle J. Liddy and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

Miles Lindquist

19 papers receiving 465 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Miles Lindquist United States 9 298 288 204 169 125 20 479
Subhajit Mohanty United States 11 227 0.8× 181 0.6× 209 1.0× 180 1.1× 149 1.2× 17 425
Kevin Udwary United States 12 260 0.9× 275 1.0× 259 1.3× 154 0.9× 56 0.4× 23 442
Ryan Gilbert United States 10 332 1.1× 336 1.2× 270 1.3× 268 1.6× 52 0.4× 30 583
Kyle J. Liddy United States 13 309 1.0× 359 1.2× 154 0.8× 178 1.1× 49 0.4× 35 462
David I. Shahin United States 10 230 0.8× 262 0.9× 179 0.9× 229 1.4× 33 0.3× 18 400
Z. Zhang United States 11 380 1.3× 380 1.3× 217 1.1× 173 1.0× 25 0.2× 19 533
C. G. Torres Castanedo Saudi Arabia 5 292 1.0× 297 1.0× 90 0.4× 81 0.5× 24 0.2× 5 361
Y. Morishima Japan 8 218 0.7× 205 0.7× 273 1.3× 116 0.7× 44 0.4× 10 356
Shahadat H. Sohel United States 12 178 0.6× 315 1.1× 344 1.7× 279 1.7× 23 0.2× 20 477
Kazuhiko Sunakawa Japan 5 613 2.1× 598 2.1× 104 0.5× 150 0.9× 45 0.4× 8 696

Countries citing papers authored by Miles Lindquist

Since Specialization
Citations

This map shows the geographic impact of Miles Lindquist's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Miles Lindquist with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Miles Lindquist more than expected).

Fields of papers citing papers by Miles Lindquist

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Miles Lindquist. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Miles Lindquist. The network helps show where Miles Lindquist may publish in the future.

Co-authorship network of co-authors of Miles Lindquist

This figure shows the co-authorship network connecting the top 25 collaborators of Miles Lindquist. A scholar is included among the top collaborators of Miles Lindquist based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Miles Lindquist. Miles Lindquist is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Lindquist, Miles, et al.. (2024). Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed. IEEE Transactions on Microwave Theory and Techniques. 72(10). 5872–5887. 3 indexed citations
3.
Lindquist, Miles & Patrick Roblin. (2024). Calibration of an Oscilloscope-Based NVNA for Periodic Modulated Signals. 1–4. 1 indexed citations
4.
Lindquist, Miles, et al.. (2023). Experimental Validation of ASM-HEMT Nonlinear Embedding Modeling of GaN HEMTs at X-band. 50. 1–4. 3 indexed citations
5.
Lindquist, Miles, Patrick Roblin, & Nicholas C. Miller. (2023). New Real-Time Pulsed-RF NVNA Testbed for Isothermal Characterization of Traps in GaN HEMTs. 1026–1029. 6 indexed citations
6.
Miller, Nicholas C., Matt Grupen, Ahmad E. Islam, et al.. (2022). Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport. IEEE Transactions on Electron Devices. 70(2). 435–442. 6 indexed citations
7.
Lindquist, Miles, Patrick Roblin, & Nicholas C. Miller. (2021). ASM-HEMT Embedding Model for Accelerated Design of PAs. 1–4. 4 indexed citations
8.
Miller, Nicholas C., Neil Moser, Robert Fitch, et al.. (2021). Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model. 1–4. 13 indexed citations
9.
Jensen, Gregory C., et al.. (2020). Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces. Applied Physics Letters. 117(21). 4 indexed citations
10.
Green, Andrew J., Neil Moser, Nicholas C. Miller, et al.. (2020). RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band. IEEE Electron Device Letters. 41(8). 1181–1184. 59 indexed citations
11.
Moser, Neil, Kyle J. Liddy, Miles Lindquist, et al.. (2020). Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band. IEEE Electron Device Letters. 41(7). 989–992. 40 indexed citations
12.
Chabak, Kelson D., Kevin Leedy, Andrew J. Green, et al.. (2019). Lateral β-Ga2O3 field effect transistors. Semiconductor Science and Technology. 35(1). 13002–13002. 99 indexed citations
13.
Liddy, Kyle J., Nolan S. Hendricks, Andrew J. Green, et al.. (2019). Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs. 219–220. 2 indexed citations
14.
Green, Andrew J., J. Gillespie, Robert Fitch, et al.. (2019). ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance. IEEE Electron Device Letters. 40(7). 1056–1059. 101 indexed citations
15.
Liddy, Kyle J., Andrew J. Green, Nolan S. Hendricks, et al.. (2019). Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates. Applied Physics Express. 12(12). 126501–126501. 41 indexed citations
16.
Aleithan, Shrouq H., et al.. (2019). Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts. ACS Omega. 4(5). 9557–9562. 8 indexed citations
17.
Dalcanale, Stefano, Manikant Singh, James W. Pomeroy, et al.. (2019). Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography. IEEE Transactions on Electron Devices. 67(1). 204–211. 26 indexed citations
18.
Chabak, Kelson D., Dennis E. Walker, Antonio Crespo, et al.. (2018). Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors. 1–3. 40 indexed citations
20.
Lindquist, Miles, et al.. (2017). As-grown two-dimensional MoS2 based photodetectors with naturally formed contacts. Applied Physics Letters. 110(26). 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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