Edward Beam

4.6k total citations
117 papers, 2.6k citations indexed

About

Edward Beam is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Edward Beam has authored 117 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Electrical and Electronic Engineering, 58 papers in Atomic and Molecular Physics, and Optics and 51 papers in Condensed Matter Physics. Recurrent topics in Edward Beam's work include Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (50 papers) and Semiconductor materials and devices (31 papers). Edward Beam is often cited by papers focused on Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (50 papers) and Semiconductor materials and devices (31 papers). Edward Beam collaborates with scholars based in United States, United Kingdom and Taiwan. Edward Beam's co-authors include Alan Seabaugh, Yu Cao, P. Saunier, J.P.A. van der Wagt, Andy Xie, Hin-Fai Chau, W. Liu, A. Ketterson, Cathy Lee and Michael L. Schuette and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Edward Beam

116 papers receiving 2.5k citations

Peers

Countries citing papers authored by Edward Beam

Since Specialization

Citations

This map shows the geographic impact of Edward Beam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Edward Beam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Edward Beam more than expected).

Fields of papers citing papers by Edward Beam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Edward Beam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Edward Beam. The network helps show where Edward Beam may publish in the future.

Co-authorship network of co-authors of Edward Beam

This figure shows the co-authorship network connecting the top 25 collaborators of Edward Beam. A scholar is included among the top collaborators of Edward Beam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Edward Beam. Edward Beam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications 2022 ·(unknown), Chunlei Wu, (unknown), Jingshan Wang, Yu Cao, (unknown), Edward Beam, Patrick Fay	6
2	An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity 2021 ·Science Advances ·(unknown), Guru Khalsa, Celesta S. Chang, D. S. Katzer, Neeraj Nepal, Brian P. Downey, Virginia D. Wheeler, A. V. Suslov, Andy Xie, Edward Beam, Yu Cao, Cathy Lee, David A. Muller, Huili Grace Xing, David J. Meyer, Debdeep Jena	18
3	Multi-Channel Monolithic-Cascode HEMT (MC²-HEMT): A New GaN Power Switch up to 10 kV 2021 ·2021 IEEE International Electron Devices Meeting (IEDM) ·Ming Xiao, Yunwei Ma, Zhonghao Du, (unknown), Kai Cheng, Ai-Gen Xie, Edward Beam, Yu Cao, Florin Udrea, Hai Wang, Yuxin Zhang	38
4	Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN 2020 ·Applied Physics Letters ·Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yu Cao, Yuhao Zhang	45
5	Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms 2019 ·Japanese Journal of Applied Physics ·Wenshen Li, Kazuki Nomoto, Aditya Sundar, Kevin Lee, Mingda Zhu, Zongyang Hu, Edward Beam, Jinqiao Xie, Manyam Pilla, Xiang Gao, Sergei Rouvimov, Debdeep Jena, Huili Grace Xing	18
6	Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates 2018 ·physica status solidi (a) ·Jingshan Wang, Robert McCarthy, C. Youtsey, Rekha Reddy, Jinqiao Xie, Edward Beam, L. J. Guido, Lina Cao, Patrick Fay	4
7	Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off 2016 ·Jun Wang, C. Youtsey, Robert McCarthy, Rekha Reddy, L. J. Guido, Ai-Gen Xie, Edward Beam, Patrick Fay	1
8	InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications 2013 ·IEEE Transactions on Electron Devices ·P. Saunier, Michael L. Schuette, Tso-Min Chou, Hua-Quen Tserng, A. Ketterson, Edward Beam, Manyam Pilla, Xiang Gao	43
9	Device Delay in GaN Transistors Under High Drain Bias Conditions 2013 ·IEEE Electron Device Letters ·Dong Seup Lee, Oleg Laboutin, Yu Cao, J. W. Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	4
10	Monolithically integrated E/D-mode InAlN HEMTs with ƒ<inf>t</inf>/ƒ<inf>max</inf> > 200/220 GHz 2012 ·Bo Song, Berardi Sensale‐Rodriguez, Ronghua Wang, A. Ketterson, Michael L. Schuette, Edward Beam, P. Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena, Huili Grace Xing	7
11	Resonant tunneling circuit technology: has it arrived? 2002 ·Alan Seabaugh, B. Brar, T.P.E. Broekaert, Gary Frazier, Frank Morris, (unknown), Edward Beam	10
12	Co-integrated resonant tunneling and heterojunction bipolar transistor full adder 2002 ·Alan Seabaugh, (unknown), Edward Beam, John N. Randall, Y. C. Kao, (unknown)	8
13	X-band InGaP PHEMTs with 70% power-added efficiency 2002 ·Ming-Yih Kao, Edward Beam, P. Saunier, William R. Frensley	10
14	Fabrication of lateral resonant tunneling devices with heterostructure barriers 1996 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·John N. Randall, T.P.E. Broekaert, (unknown), Edward Beam, Alan Seabaugh, D. Jovanovic	1
15	The use of CBr4 and SiBr4 doping in MOMBE and application to InP-based heterojunction bipolar transistor structures 1996 ·Journal of Crystal Growth ·Edward Beam, Hin-Fai Chau	6
16	Functional InP/InGaAs lateral double barrier heterostructure resonant tunneling diodes by using etch and regrowth 1996 ·Applied Physics Letters ·T.P.E. Broekaert, John N. Randall, Edward Beam, D. Jovanovic, Alan Seabaugh, (unknown)	1
17	Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy 1995 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. L. Skala, (unknown), J. R. Tucker, Joseph W. Lyding, Alan Seabaugh, Edward Beam, D. Jovanovic	17
18	High-speed, high breakdown voltage InP/InGaAs double-heterojunction bipolar transistors grown by MOMBE 1993 ·IEEE Transactions on Electron Devices ·Hin-Fai Chau, Edward Beam	6
19	Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit 1993 ·IEEE Electron Device Letters ·T. S. Moise, Alan Seabaugh, Edward Beam, John N. Randall	14
20	The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung Devices 1991 ·MRS Proceedings ·Edward Beam, Alan Seabaugh	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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