Edward Beam

4.6k total citations
117 papers, 2.6k citations indexed

About

Edward Beam is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Edward Beam has authored 117 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 94 papers in Electrical and Electronic Engineering, 58 papers in Atomic and Molecular Physics, and Optics and 51 papers in Condensed Matter Physics. Recurrent topics in Edward Beam's work include Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (50 papers) and Semiconductor materials and devices (31 papers). Edward Beam is often cited by papers focused on Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (50 papers) and Semiconductor materials and devices (31 papers). Edward Beam collaborates with scholars based in United States, United Kingdom and Taiwan. Edward Beam's co-authors include Alan Seabaugh, Yu Cao, P. Saunier, J.P.A. van der Wagt, Andy Xie, Hin-Fai Chau, W. Liu, A. Ketterson, Cathy Lee and Michael L. Schuette and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Edward Beam

116 papers receiving 2.5k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Edward Beam 2.0k 1.5k 980 645 520 117 2.6k
Paul L. Voss 1.4k 0.7× 781 0.5× 1.1k 1.2× 396 0.6× 778 1.5× 130 2.7k
Yuji Ando 1.7k 0.8× 1.2k 0.8× 762 0.8× 502 0.8× 366 0.7× 126 2.1k
Niklas Rorsman 2.8k 1.4× 1.8k 1.2× 769 0.8× 532 0.8× 496 1.0× 199 3.2k
M. Sabathil 1.3k 0.6× 1.4k 0.9× 1.8k 1.8× 405 0.6× 765 1.5× 43 2.5k
I. P. Smorchkova 1.2k 0.6× 2.2k 1.5× 1.2k 1.2× 1.1k 1.8× 986 1.9× 39 2.8k
I.C. Kizilyalli 2.9k 1.4× 1.6k 1.1× 663 0.7× 750 1.2× 650 1.3× 100 3.3k
Yasunori Tokuda 1.1k 0.5× 526 0.4× 657 0.7× 465 0.7× 257 0.5× 130 1.6k
P. Douglas Yoder 561 0.3× 1.1k 0.7× 521 0.5× 545 0.8× 480 0.9× 80 1.5k
K. Hinode 1.2k 0.6× 523 0.3× 588 0.6× 673 1.0× 291 0.6× 106 1.8k
D. Théron 1.4k 0.7× 706 0.5× 895 0.9× 180 0.3× 268 0.5× 102 1.8k

Countries citing papers authored by Edward Beam

Since Specialization
Citations

This map shows the geographic impact of Edward Beam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Edward Beam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Edward Beam more than expected).

Fields of papers citing papers by Edward Beam

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Edward Beam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Edward Beam. The network helps show where Edward Beam may publish in the future.

Co-authorship network of co-authors of Edward Beam

This figure shows the co-authorship network connecting the top 25 collaborators of Edward Beam. A scholar is included among the top collaborators of Edward Beam based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Edward Beam. Edward Beam is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wu, Chunlei, et al.. (2022). Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications. 1–2. 6 indexed citations
2.
Khalsa, Guru, Celesta S. Chang, D. S. Katzer, et al.. (2021). An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. Science Advances. 7(8). 18 indexed citations
3.
Xiao, Ming, Yunwei Ma, Zhonghao Du, et al.. (2021). Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV. 2021 IEEE International Electron Devices Meeting (IEDM). 5.5.1–5.5.4. 38 indexed citations
4.
Xiao, Ming, Zhonghao Du, Jinqiao Xie, et al.. (2020). Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN. Applied Physics Letters. 116(5). 45 indexed citations
5.
Li, Wenshen, Kazuki Nomoto, Aditya Sundar, et al.. (2019). Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms. Japanese Journal of Applied Physics. 58(SC). SCCD15–SCCD15. 18 indexed citations
6.
Green, Andrew J., J. Gillespie, Robert Fitch, et al.. (2019). ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance. IEEE Electron Device Letters. 40(7). 1056–1059. 101 indexed citations
7.
Fay, Patrick, Jingshan Wang, Lina Cao, et al.. (2019). (Invited) Epitaxial Lift-Off of GaN and Related Materials for Device Applications. ECS Transactions. 92(4). 97–102. 2 indexed citations
8.
Wang, Jingshan, Robert McCarthy, C. Youtsey, et al.. (2018). Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates. physica status solidi (a). 216(4). 4 indexed citations
9.
Saunier, P., Michael L. Schuette, Tso-Min Chou, et al.. (2013). InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications. IEEE Transactions on Electron Devices. 60(10). 3099–3104. 43 indexed citations
10.
Song, Bo, Berardi Sensale‐Rodriguez, Ronghua Wang, et al.. (2012). Monolithically integrated E/D-mode InAlN HEMTs with &#x0192;<inf>t</inf>/&#x0192;<inf>max</inf> &#x003E; 200/220 GHz. 32. 1–2. 7 indexed citations
11.
Seabaugh, Alan, et al.. (2002). Co-integrated resonant tunneling and heterojunction bipolar transistor full adder. 419–422. 8 indexed citations
12.
Seabaugh, Alan, B. Brar, T.P.E. Broekaert, et al.. (2002). Resonant tunneling circuit technology: has it arrived?. 119–122. 10 indexed citations
13.
Taylor, Michael D., G. C. Wetsel, Sterling E. McBride, et al.. (1995). Nanoprobe-induced electrostatic lateral quantization in near-surface resonant-tunneling heterostructures. Applied Physics Letters. 66(26). 3621–3623. 6 indexed citations
14.
Skala, S. L., J. R. Tucker, Joseph W. Lyding, et al.. (1995). Interface characterization in an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 660–663. 17 indexed citations
15.
Chau, Hin-Fai & Edward Beam. (1993). High-speed, high breakdown voltage InP/InGaAs double-heterojunction bipolar transistors grown by MOMBE. IEEE Transactions on Electron Devices. 40(11). 2121–2121. 6 indexed citations
16.
Moise, T. S., Alan Seabaugh, Edward Beam, & John N. Randall. (1993). Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit. IEEE Electron Device Letters. 14(9). 441–443. 14 indexed citations
17.
Estrera, Joseph P., et al.. (1991). Systematic optical and x-ray study of In x Ga1−x As on InP. Journal of Electronic Materials. 20(12). 983–987. 12 indexed citations
18.
Beam, Edward, Y. C. Kao, & Jianyi Yang. (1991). A cantilever shadow mask technique for reduced area molecular beam epitaxial growth. Applied Physics Letters. 58(2). 152–154. 10 indexed citations
19.
20.
Beam, Edward & D.D.L. Chung. (1984). Phase Transitions in Gold Contacts to Gallium Arsenide. MRS Proceedings. 37. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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