M. Baldini

3.0k total citations · 1 hit paper
28 papers, 2.5k citations indexed

About

M. Baldini is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, M. Baldini has authored 28 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Materials Chemistry, 16 papers in Electronic, Optical and Magnetic Materials and 13 papers in Electrical and Electronic Engineering. Recurrent topics in M. Baldini's work include Ga2O3 and related materials (16 papers), ZnO doping and properties (16 papers) and Semiconductor Quantum Structures and Devices (8 papers). M. Baldini is often cited by papers focused on Ga2O3 and related materials (16 papers), ZnO doping and properties (16 papers) and Semiconductor Quantum Structures and Devices (8 papers). M. Baldini collaborates with scholars based in Germany, Italy and France. M. Baldini's co-authors include G. Wagner, Zbigniew Galazka, Robert Schewski, M. Albrecht, K. Irmscher, Andreas Fiedler, D. Gogova, Kelson D. Chabak, Kevin Leedy and Gregg H. Jessen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

M. Baldini

27 papers receiving 2.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

2016 474 citations Andrew J. Green, Kelson D. Chabak et al. IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Baldini Germany	15	2.4k	2.4k	1.3k	414	182	28	2.5k
Zhanbo Xia United States	23	2.1k 0.9×	2.0k 0.8×	949 0.7×	502 1.2×	380 2.1×	40	2.2k
Quang Tu Thieu Japan	18	1.7k 0.7×	1.6k 0.7×	836 0.6×	313 0.8×	221 1.2×	33	1.8k
А. В. Черных Russia	19	940 0.4×	918 0.4×	608 0.5×	227 0.5×	85 0.5×	64	1.1k
Chandan Joishi United States	15	1.3k 0.6×	1.3k 0.5×	586 0.4×	309 0.7×	195 1.1×	45	1.4k
Zhaoqing Feng China	21	1.1k 0.4×	1.0k 0.4×	513 0.4×	280 0.7×	177 1.0×	36	1.2k
Daivasigamani Krishnamurthy Japan	8	874 0.4×	865 0.4×	384 0.3×	222 0.5×	127 0.7×	24	954
Stephen E. Tetlak United States	14	1.3k 0.5×	1.3k 0.5×	529 0.4×	366 0.9×	263 1.4×	21	1.5k
Neil Moser United States	18	1.6k 0.6×	1.5k 0.6×	647 0.5×	571 1.4×	449 2.5×	45	1.9k
Kimiyoshi Koshi Japan	11	1.4k 0.6×	1.4k 0.6×	765 0.6×	194 0.5×	72 0.4×	18	1.4k
Daniel Splith Germany	21	906 0.4×	1.1k 0.4×	393 0.3×	369 0.9×	81 0.4×	46	1.2k

Countries citing papers authored by M. Baldini

Since Specialization

Citations

This map shows the geographic impact of M. Baldini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Baldini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Baldini more than expected).

Fields of papers citing papers by M. Baldini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Baldini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Baldini. The network helps show where M. Baldini may publish in the future.

Co-authorship network of co-authors of M. Baldini

This figure shows the co-authorship network connecting the top 25 collaborators of M. Baldini. A scholar is included among the top collaborators of M. Baldini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Baldini. M. Baldini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Makkonen, Ilja, et al.. (2019). Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy. Aaltodoc (Aalto University). 4–4. 7 indexed citations

Baldini, M., Zbigniew Galazka, & G. Wagner. (2017). Recent progress in the growth of β-Ga2O3 for power electronics applications. Materials Science in Semiconductor Processing. 78. 132–146. 204 indexed citations

Fiedler, Andreas, Robert Schewski, M. Baldini, et al.. (2017). Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy. Journal of Applied Physics. 122(16). 78 indexed citations

Chabak, Kelson D., Neil Moser, Andrew J. Green, et al.. (2016). Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage. Applied Physics Letters. 109(21). 307 indexed citations

Schewski, Robert, M. Baldini, K. Irmscher, et al.. (2016). Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model. Journal of Applied Physics. 120(22). 91 indexed citations

Green, Andrew J., Kelson D. Chabak, Eric R. Heller, et al.. (2016). 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs. IEEE Electron Device Letters. 37(7). 902–905. 474 indexed citations breakdown →

Baldini, M., M. Albrecht, Andreas Fiedler, et al.. (2016). Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga₂O₃Layers Grown by MOVPE on (010)-Oriented Substrates. ECS Journal of Solid State Science and Technology. 6(2). Q3040–Q3044. 240 indexed citations

Korhonen, E., Filip Tuomisto, D. Gogova, et al.. (2015). Electrical compensation by Ga vacancies in Ga2O3 thin films. Applied Physics Letters. 106(24). 166 indexed citations

Baldini, M., M. Albrecht, D. Gogova, Robert Schewski, & G. Wagner. (2015). Effect of indium as a surfactant in (Ga_1−xIn_x)₂O₃epitaxial growth onβ-Ga₂O₃by metal organic vapour phase epitaxy. Semiconductor Science and Technology. 30(2). 24013–24013. 44 indexed citations

10.

Baldini, M., D. Gogova, K. Irmscher, et al.. (2014). Heteroepitaxy of Ga_2(1‑x)In_2xO₃ layers by MOVPE with two different oxygen sources. Crystal Research and Technology. 49(8). 552–557. 30 indexed citations

11.

Baldini, M., D. Gogova, M. Schmidbauer, et al.. (2013). Homoepitaxial growth of β‐Ga₂O₃ layers by metal‐organic vapor phase epitaxy. physica status solidi (a). 211(1). 27–33. 172 indexed citations

12.

Baldini, M., et al.. (2013). Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures. Journal of Applied Physics. 114(13).

13.

Gogova, D., M. Baldini, M. Schmidbauer, et al.. (2013). Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE. Journal of Crystal Growth. 401. 665–669. 149 indexed citations

14.

Dubecký, F., Matúš Dubecký, Pavel Hubı́k, et al.. (2013). Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs. Solid-State Electronics. 82. 72–76. 5 indexed citations

15.

Dubecký, F., E. Gombia, C. Ferrari, et al.. (2012). Characterization of epitaxial 4H-SiC for photon detectors. Journal of Instrumentation. 7(9). P09005–P09005. 16 indexed citations

16.

Baldini, M., Carlo Ghezzi, A. Parisini, et al.. (2011). Growth and characterization of buried GaSb p‐n junctions for photovoltaic applications. Crystal Research and Technology. 46(8). 852–856. 5 indexed citations

17.

Parisini, A., et al.. (2010). Anomalies in the Temperature Dependence of the Photoelectrical Response of GaAs/InGaP Superlattices. Japanese Journal of Applied Physics. 49(12R). 122001–122001. 1 indexed citations

18.

Parisini, A., et al.. (2009). Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices. Journal of Applied Physics. 106(11). 2 indexed citations

19.

Gilioli, E., M. Baldini, F. Bissoli, et al.. (2007). Co-evaporated YBCO/doped-CeO2/Ni–W coated conductors oxygen improved using a supersonic nozzle. Physica C Superconductivity. 463-465. 609–614. 13 indexed citations

20.

Gilioli, E., Andrea Gauzzi, Stefano Rampino, et al.. (2006). Progress in the Continuous Depostition of YBCO Coated Conductors by Thermal Co-Evaporation. Advances in science and technology. 47. 17–24. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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