Kazuki Nomoto

4.9k total citations
136 papers, 4.0k citations indexed

About

Kazuki Nomoto is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kazuki Nomoto has authored 136 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 100 papers in Condensed Matter Physics, 83 papers in Electrical and Electronic Engineering and 57 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kazuki Nomoto's work include GaN-based semiconductor devices and materials (100 papers), Ga2O3 and related materials (57 papers) and Semiconductor materials and devices (51 papers). Kazuki Nomoto is often cited by papers focused on GaN-based semiconductor devices and materials (100 papers), Ga2O3 and related materials (57 papers) and Semiconductor materials and devices (51 papers). Kazuki Nomoto collaborates with scholars based in United States, Japan and Italy. Kazuki Nomoto's co-authors include Huili Grace Xing, Debdeep Jena, Zongyang Hu, Wenshen Li, Tohru Nakamura, Mingda Zhu, Tomoyoshi Mishima, Naoki Kaneda, Meng Qi and Bo Song and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

Kazuki Nomoto

128 papers receiving 3.9k citations

Peers

Kazuki Nomoto

EOMM

CMP

EEE

RESE

Jennifer K. Hite United States

Houqiang Fu United States

Antonio Crespo United States

Kelson D. Chabak United States

Zongyang Hu United States

Digbijoy N. Nath India

Kai Fu United States

Shengrui Xu China

Jacob H. Leach United States

Kwang Hyeon Baik South Korea

Jennifer K. Hite United States

Kazuki Nomoto

1.4k ×0.6

EOMM

2.0k ×0.9

CMP

1.8k ×0.9

EEE

2.0k ×1.1

278 ×0.4

RESE

Citations per year, relative to Kazuki Nomoto Kazuki Nomoto (= 1×) peers Jennifer K. Hite

Countries citing papers authored by Kazuki Nomoto

Since Specialization

Citations

This map shows the geographic impact of Kazuki Nomoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kazuki Nomoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kazuki Nomoto more than expected).

Fields of papers citing papers by Kazuki Nomoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kazuki Nomoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kazuki Nomoto. The network helps show where Kazuki Nomoto may publish in the future.

Co-authorship network of co-authors of Kazuki Nomoto

This figure shows the co-authorship network connecting the top 25 collaborators of Kazuki Nomoto. A scholar is included among the top collaborators of Kazuki Nomoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kazuki Nomoto. Kazuki Nomoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shoemaker, James D., Kazuki Nomoto, Jimy Encomendero, et al.. (2025). Velocity-field measurements in a GaN/AlN two-dimensional hole gas. Applied Physics Letters. 127(3).

Chae, Sieun, Tony Chiang, Matthew Webb, et al.. (2024). Efficient data processing using tunable entropy-stabilized oxide memristors. Nature Electronics. 7(6). 466–474. 14 indexed citations

Zhao, Wenwen, Jimy Encomendero, Kazuki Nomoto, et al.. (2024). Performance Limiting Factors of 15-GHz Ku-Band FBARs. IEEE Transactions on Electron Devices. 71(8). 4968–4976. 3 indexed citations

Li, Wenshen, Kazuki Nomoto, Felix V. E. Hensling, et al.. (2024). Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(3). 6 indexed citations

Zhang, Zexuan, Jimy Encomendero, Kazuki Nomoto, et al.. (2023). N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates. Applied Physics Letters. 122(9). 26 indexed citations

Zhang, Zexuan, Jimy Encomendero, Yong-Jin Cho, et al.. (2022). High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates. Applied Physics Letters. 121(8). 10 indexed citations

Dalcanale, Stefano, Michael J. Uren, Wenshen Li, et al.. (2021). Breakdown Mechanisms in β-Ga₂O₃ Trench-MOS Schottky-Barrier Diodes. IEEE Transactions on Electron Devices. 69(1). 75–81. 16 indexed citations

McCandless, Jonathan P., Celesta S. Chang, Kazuki Nomoto, et al.. (2021). Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire. Applied Physics Letters. 119(6). 54 indexed citations

Li, Wenshen, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, & Huili Grace Xing. (2021). ON-Resistance of Ga₂O₃ Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping. IEEE Transactions on Electron Devices. 68(5). 2420–2426. 34 indexed citations

10.

Li, Wenshen, et al.. (2020). Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes. Applied Physics Letters. 116(19). 117 indexed citations

11.

Li, Lei, Kazuki Nomoto, Ming Pan, et al.. (2020). GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz. IEEE Electron Device Letters. 41(5). 689–692. 89 indexed citations

12.

Santi, Carlo De, Wenshen Li, Kazuki Nomoto, et al.. (2020). Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements. IEEE Transactions on Electron Devices. 67(10). 3954–3959. 31 indexed citations

13.

Li, Wenshen, Kazuki Nomoto, Debdeep Jena, & Huili Grace Xing. (2020). Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β -Ga2O3. Applied Physics Letters. 117(22). 27 indexed citations

14.

Meneghini, Matteo, Maria Ruzzarin, Carlo De Santi, et al.. (2020). Degradation Mechanisms of GaN‐Based Vertical Devices: A Review. physica status solidi (a). 217(7). 13 indexed citations

15.

Li, Wenshen, Kazuki Nomoto, Aditya Sundar, et al.. (2019). Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms. Japanese Journal of Applied Physics. 58(SC). SCCD15–SCCD15. 18 indexed citations

16.

Meneghesso, Gaudenzio, Enrico Zanoni, Matteo Meneghini, et al.. (2019). Breakdown Walkout in Polarization-Doped Vertical GaN Diodes. IEEE Transactions on Electron Devices. 66(11). 4597–4603. 9 indexed citations

17.

Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV. IEEE Electron Device Letters. 39(6). 869–872. 254 indexed citations

18.

Li, Wenshen, Huili Grace Xing, Kazuki Nomoto, et al.. (2018). Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel. IEEE Transactions on Electron Devices. 65(6). 2558–2564. 56 indexed citations

19.

Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors. Applied Physics Letters. 113(12). 142 indexed citations

20.

Hu, Zongyang, Kazuki Nomoto, Meng Qi, et al.. (2017). 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy. IEEE Electron Device Letters. 38(8). 1071–1074. 64 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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