Kazuki Nomoto

4.9k total citations
136 papers, 4.0k citations indexed

About

Kazuki Nomoto is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kazuki Nomoto has authored 136 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 100 papers in Condensed Matter Physics, 83 papers in Electrical and Electronic Engineering and 57 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kazuki Nomoto's work include GaN-based semiconductor devices and materials (100 papers), Ga2O3 and related materials (57 papers) and Semiconductor materials and devices (51 papers). Kazuki Nomoto is often cited by papers focused on GaN-based semiconductor devices and materials (100 papers), Ga2O3 and related materials (57 papers) and Semiconductor materials and devices (51 papers). Kazuki Nomoto collaborates with scholars based in United States, Japan and Italy. Kazuki Nomoto's co-authors include Huili Grace Xing, Debdeep Jena, Zongyang Hu, Wenshen Li, Tohru Nakamura, Mingda Zhu, Tomoyoshi Mishima, Naoki Kaneda, Meng Qi and Bo Song and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

Kazuki Nomoto

128 papers receiving 3.9k citations

Peers

Countries citing papers authored by Kazuki Nomoto

Since Specialization

Citations

This map shows the geographic impact of Kazuki Nomoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kazuki Nomoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kazuki Nomoto more than expected).

Fields of papers citing papers by Kazuki Nomoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kazuki Nomoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kazuki Nomoto. The network helps show where Kazuki Nomoto may publish in the future.

Co-authorship network of co-authors of Kazuki Nomoto

This figure shows the co-authorship network connecting the top 25 collaborators of Kazuki Nomoto. A scholar is included among the top collaborators of Kazuki Nomoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kazuki Nomoto. Kazuki Nomoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Velocity-field measurements in a GaN/AlN two-dimensional hole gas 2025 ·Applied Physics Letters ·(unknown), James D. Shoemaker, Kazuki Nomoto, Jimy Encomendero, Zexuan Zhang, (unknown), (unknown), Feliciano Giustino, Stephen M. Goodnick, Debdeep Jena, Huili Grace Xing	0
2	Efficient data processing using tunable entropy-stabilized oxide memristors 2024 ·Nature Electronics ·(unknown), Sieun Chae, Tony Chiang, Matthew Webb, Tao Ma, Hanjong Paik, Yongmo Park, Logan Williams, Kazuki Nomoto, Huili Grace Xing, Susan Trolier‐McKinstry, Emmanouil Kioupakis, John T. Heron, Wei Lü	14
3	Performance Limiting Factors of 15-GHz Ku-Band FBARs 2024 ·IEEE Transactions on Electron Devices ·Wenwen Zhao, (unknown), (unknown), Jimy Encomendero, Kazuki Nomoto, Lei Li, David J. Smith, James C. M. Hwang, Huili Grace Xing, Debdeep Jena	3
4	Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy 2024 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·(unknown), (unknown), (unknown), Wenshen Li, Kazuki Nomoto, Felix V. E. Hensling, (unknown), Hari P. Nair, Darrell G. Schlom, David A. Muller, Debdeep Jena, Huili Grace Xing	6
5	N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates 2023 ·Applied Physics Letters ·(unknown), Zexuan Zhang, Jimy Encomendero, (unknown), Kazuki Nomoto, Austin Hickman, Cheng Wang, Patrick Fay, Masato Toita, Debdeep Jena, Huili Grace Xing	26
6	High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates 2022 ·Applied Physics Letters ·Zexuan Zhang, Jimy Encomendero, (unknown), (unknown), Yong-Jin Cho, Kazuki Nomoto, Masato Toita, Huili Grace Xing, Debdeep Jena	10
7	Breakdown Mechanisms in β-Ga₂O₃ Trench-MOS Schottky-Barrier Diodes 2021 ·IEEE Transactions on Electron Devices ·(unknown), Stefano Dalcanale, (unknown), Michael J. Uren, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Martin Kuball	16
8	Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire 2021 ·Applied Physics Letters ·Jonathan P. McCandless, Celesta S. Chang, Kazuki Nomoto, Joseph Casamento, Vladimir Protasenko, Patrick Vogt, (unknown), (unknown), (unknown), Wenshen Li, Riena Jinno, Yong-Jin Cho, (unknown), Kelson D. Chabak, Darrell G. Schlom, Michael O. Thompson, David A. Muller, Huili Grace Xing, Debdeep Jena	54
9	ON-Resistance of Ga₂O₃ Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping 2021 ·IEEE Transactions on Electron Devices ·Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing	34
10	Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes 2020 ·Applied Physics Letters ·Wenshen Li, (unknown), (unknown), Kazuki Nomoto, Debdeep Jena, Huili Grace Xing	117
11	GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz 2020 ·IEEE Electron Device Letters ·Lei Li, Kazuki Nomoto, Ming Pan, Wenshen Li, Austin Hickman, J. N. Miller, Kevin Lee, Zongyang Hu, Samuel James Bader, Soo Min Lee, James C. M. Hwang, Debdeep Jena, Huili Grace Xing	89
12	Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements 2020 ·IEEE Transactions on Electron Devices ·(unknown), Carlo De Santi, (unknown), Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	31
13	Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β -Ga2O3 2020 ·Applied Physics Letters ·Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing	27
14	Degradation Mechanisms of GaN‐Based Vertical Devices: A Review 2020 ·physica status solidi (a) ·Matteo Meneghini, (unknown), Maria Ruzzarin, Carlo De Santi, Kazuki Nomoto, Zhenqi Hu, Wenshen Li, Xing-Ya Gao, Debdeep Jena, Huili Grace Xing, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni	13
15	Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms 2019 ·Japanese Journal of Applied Physics ·Wenshen Li, Kazuki Nomoto, Aditya Sundar, Kevin Lee, Mingda Zhu, Zongyang Hu, Edward Beam, Jinqiao Xie, Manyam Pilla, Xiang Gao, Sergei Rouvimov, Debdeep Jena, Huili Grace Xing	18
16	Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 2019 ·IEEE Transactions on Electron Devices ·(unknown), Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Carlo De Santi, (unknown), Kazuki Nomoto, Zongyang Hu, Wenshen Li, Xiang Gao, Debdeep Jena, Huili Grace Xing	9
17	Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV 2018 ·IEEE Electron Device Letters ·Zongyang Hu, Kazuki Nomoto, Wenshen Li, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Tohru Nakamura, Debdeep Jena, Huili Grace Xing	254
18	Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel 2018 ·IEEE Transactions on Electron Devices ·Wenshen Li, Huili Grace Xing, Kazuki Nomoto, (unknown), S. M. Islam, Zongyang Hu, Mingda Zhu, Xiang Gao, Manyam Pilla, Debdeep Jena	56
19	Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors 2018 ·Applied Physics Letters ·Zongyang Hu, Kazuki Nomoto, Wenshen Li, Zexuan Zhang, Nicholas Tanen, Quang Tu Thieu, Kohei Sasaki, Akito Kuramata, Tohru Nakamura, Debdeep Jena, Huili Grace Xing	142
20	1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy 2017 ·IEEE Electron Device Letters ·Zongyang Hu, Kazuki Nomoto, Meng Qi, Wenshen Li, Mingda Zhu, Xiang Gao, Debdeep Jena, Huili Grace Xing	64

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact