Andy Xie

837 total citations
25 papers, 638 citations indexed

About

Andy Xie is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Andy Xie has authored 25 papers receiving a total of 638 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 13 papers in Electrical and Electronic Engineering and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Andy Xie's work include GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (9 papers) and Acoustic Wave Resonator Technologies (6 papers). Andy Xie is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (9 papers) and Acoustic Wave Resonator Technologies (6 papers). Andy Xie collaborates with scholars based in United States, China and United Kingdom. Andy Xie's co-authors include Edward Beam, Yu Cao, Cathy Lee, Siddharth Rajan, Hao Xue, Wu Lu, Shahadat H. Sohel, Sanyam Bajaj, Towhidur Razzak and T.A. Grotjohn and has published in prestigious journals such as SHILAP Revista de lepidopterología, ACS Applied Materials & Interfaces and Science Advances.

In The Last Decade

Andy Xie

25 papers receiving 613 citations

Peers

Andy Xie
Andrew Klump United States
Shubhra S. Pasayat United States
K. Hazu Japan
Martin Neuburger Germany
Reet Chaudhuri United States
Ningyang Liu China
S. D. Arthur United States
K. Y. Zang Singapore
Hanling Long China
Matt D. Brubaker United States
Andrew Klump United States
Andy Xie
Citations per year, relative to Andy Xie Andy Xie (= 1×) peers Andrew Klump

Countries citing papers authored by Andy Xie

Since Specialization
Citations

This map shows the geographic impact of Andy Xie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andy Xie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andy Xie more than expected).

Fields of papers citing papers by Andy Xie

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andy Xie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andy Xie. The network helps show where Andy Xie may publish in the future.

Co-authorship network of co-authors of Andy Xie

This figure shows the co-authorship network connecting the top 25 collaborators of Andy Xie. A scholar is included among the top collaborators of Andy Xie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Andy Xie. Andy Xie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xie, Andy, et al.. (2024). Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier. IEEE Electron Device Letters. 45(7). 1161–1164. 2 indexed citations
2.
Wang, Jingshan, et al.. (2023). 1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation. SHILAP Revista de lepidopterología. 6. 100330–100330. 4 indexed citations
3.
Duan, Yu, Andy Xie, & Patrick Fay. (2023). 1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination. 1–2. 3 indexed citations
4.
Khalsa, Guru, Celesta S. Chang, D. S. Katzer, et al.. (2021). An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. Science Advances. 7(8). 18 indexed citations
5.
6.
Zhang, Yuhao, Ming Xiao, Yunwei Ma, et al.. (2021). (Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV. ECS Transactions. 104(4). 51–59. 2 indexed citations
7.
Rahman, Mohammad Wahidur, Andy Xie, Hao Xue, et al.. (2021). Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide. IEEE Transactions on Electron Devices. 68(7). 3333–3338. 28 indexed citations
8.
Zhang, Xue, et al.. (2020). Synthesis and luminescent properties of novel red-emitting Eu(III) complexes based on alanine aliphatic derivatives with different optical rotation. Materials Research Express. 7(2). 25102–25102. 6 indexed citations
9.
Xiao, Ming, Yunwei Ma, Kai Cheng, et al.. (2020). 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination. IEEE Electron Device Letters. 41(8). 1177–1180. 77 indexed citations
10.
Downey, Brian P., Andy Xie, Shawn Mack, et al.. (2020). Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design. 29. 1–2. 4 indexed citations
11.
Green, Andrew J., Neil Moser, Nicholas C. Miller, et al.. (2020). RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band. IEEE Electron Device Letters. 41(8). 1181–1184. 59 indexed citations
12.
Sohel, Shahadat H., Andy Xie, Edward Beam, et al.. (2020). Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors. Applied Physics Express. 13(3). 36502–36502. 11 indexed citations
13.
14.
Sohel, Shahadat H., Mohammad Wahidur Rahman, Andy Xie, et al.. (2019). Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation. IEEE Electron Device Letters. 41(1). 19–22. 47 indexed citations
15.
Sohel, Shahadat H., Andy Xie, Edward Beam, et al.. (2019). Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications. IEEE Electron Device Letters. 40(4). 522–525. 35 indexed citations
16.
Green, Andrew J., J. Gillespie, Robert Fitch, et al.. (2019). ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance. IEEE Electron Device Letters. 40(7). 1056–1059. 101 indexed citations
17.
Zhang, Yuepeng, L. Witkowski, Soack Dae Yoon, et al.. (2019). Monolithic Integration of Self-Biased ${C}$ -Band Circulator on SiC Substrate for GaN MMIC Applications. IEEE Electron Device Letters. 40(8). 1249–1252. 5 indexed citations
18.
Chen, Zhifeng, Kara S. Cox, Aimin Tang, et al.. (2018). Human monoclonal antibodies isolated from a primary pneumococcal conjugate Vaccinee demonstrates the expansion of an antigen-driven Hypermutated memory B cell response. BMC Infectious Diseases. 18(1). 613–613. 11 indexed citations
19.
Zhou, Yan, J. Anaya, James W. Pomeroy, et al.. (2017). Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling. ACS Applied Materials & Interfaces. 9(39). 34416–34422. 120 indexed citations
20.
Youtsey, C., Robert McCarthy, Rekha Reddy, et al.. (2017). Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching. physica status solidi (b). 254(8). 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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