Reet Chaudhuri

896 total citations
25 papers, 641 citations indexed

About

Reet Chaudhuri is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Reet Chaudhuri has authored 25 papers receiving a total of 641 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Reet Chaudhuri's work include GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (11 papers) and Radio Frequency Integrated Circuit Design (9 papers). Reet Chaudhuri is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (11 papers) and Radio Frequency Integrated Circuit Design (9 papers). Reet Chaudhuri collaborates with scholars based in United States, Poland and India. Reet Chaudhuri's co-authors include Huili Grace Xing, Debdeep Jena, Austin Hickman, Samuel James Bader, Kazuki Nomoto, James C. M. Hwang, Lei Li, Han Wui Then, Kevin Lee and Alyosha Molnar and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Reet Chaudhuri

23 papers receiving 624 citations

Peers

Reet Chaudhuri

CMP

EEE

EOMM

Cory Lund United States

Shawn R. Gibb United States

Yaozong Zhong China

M. Hayden Breckenridge United States

Nikholas G. Toledo United States

Jr‐Tai Chen Sweden

Aiqin Tian China

Ž. Gačević Spain

Anders Lundskog Sweden

Matthew Charles France

Cory Lund United States

Reet Chaudhuri

619 ×1.2

CMP

398 ×1.0

EEE

276 ×1.1

EOMM

195 ×1.1

83 ×0.5

Citations per year, relative to Reet Chaudhuri Reet Chaudhuri (= 1×) peers Cory Lund

Countries citing papers authored by Reet Chaudhuri

Since Specialization

Citations

This map shows the geographic impact of Reet Chaudhuri's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Reet Chaudhuri with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Reet Chaudhuri more than expected).

Fields of papers citing papers by Reet Chaudhuri

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Reet Chaudhuri. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Reet Chaudhuri. The network helps show where Reet Chaudhuri may publish in the future.

Co-authorship network of co-authors of Reet Chaudhuri

This figure shows the co-authorship network connecting the top 25 collaborators of Reet Chaudhuri. A scholar is included among the top collaborators of Reet Chaudhuri based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Reet Chaudhuri. Reet Chaudhuri is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Chaudhuri, Reet, Antonio T. Lucero, Austin Hickman, et al.. (2025). MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation. Applied Physics Express. 18(7). 76501–76501.

Wani, Sachin, Zahid A. Khan, Reet Chaudhuri, et al.. (2024). On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs. 1–5.

Hickman, Austin, Lei Li, Reet Chaudhuri, et al.. (2023). RF operation of AlN/Al_0.25Ga_0.75N/AlN HEMTs with f _T/f _max of 67/166 GHz. Applied Physics Express. 16(11). 111003–111003. 6 indexed citations

Hickman, Austin, Reet Chaudhuri, Lei Li, et al.. (2023). 2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC. physica status solidi (a). 220(16). 7 indexed citations

Hickman, Austin, et al.. (2023). AlN/AlGaN/AlN quantum well channel HEMTs. Applied Physics Letters. 122(22). 14 indexed citations

Zhao, Wenwen, Lei Li, Reet Chaudhuri, et al.. (2022). X-band epi-BAW resonators. Journal of Applied Physics. 132(2). 16 indexed citations

Chaudhuri, Reet, Zexuan Zhang, Huili Grace Xing, & Debdeep Jena. (2022). Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures. Advanced Electronic Materials. 8(5). 12 indexed citations

Wang, Xiaopeng, Reet Chaudhuri, Austin Hickman, et al.. (2022). Quantitative scanning microwave microscopy of 2D electron and hole gases in AlN/GaN heterostructures. Applied Physics Letters. 120(1). 6 indexed citations

Chaudhuri, Reet. (2022). Integrated Electronics on Aluminum Nitride. Springer theses. 2 indexed citations

10.

Chaudhuri, Reet, et al.. (2022). Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures. APL Materials. 10(11). 34 indexed citations

11.

Zhang, Zexuan, Jimy Encomendero, Reet Chaudhuri, et al.. (2021). Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates. Applied Physics Letters. 119(16). 25 indexed citations

12.

Hickman, Austin, Reet Chaudhuri, Neil Moser, et al.. (2021). Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz. 1–2. 7 indexed citations

13.

Chaudhuri, Reet, et al.. (2021). In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors. physica status solidi (a). 219(4). 14 indexed citations

14.

Bader, Samuel James, Hyunjea Lee, Reet Chaudhuri, et al.. (2020). Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices. IEEE Transactions on Electron Devices. 67(10). 4010–4020. 106 indexed citations

15.

Hickman, Austin, Reet Chaudhuri, Lei Li, et al.. (2020). First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz. IEEE Journal of the Electron Devices Society. 9. 121–124. 64 indexed citations

16.

Chaudhuri, Reet, Samuel James Bader, Zhen Chen, et al.. (2020). Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures. physica status solidi (b). 257(4). 9 indexed citations

17.

Shinohara, K., J. Bergman, Miguel Urteaga, et al.. (2019). GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers. 1133–1135. 22 indexed citations

18.

Hickman, Austin, Reet Chaudhuri, Samuel James Bader, et al.. (2019). High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs. IEEE Electron Device Letters. 40(8). 1293–1296. 104 indexed citations

19.

Shinohara, K., Andrew Carter, Miguel Urteaga, et al.. (2019). (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity. ECS Transactions. 92(4). 103–108. 6 indexed citations

20.

Bader, Samuel James, Reet Chaudhuri, Austin Hickman, et al.. (2019). GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current. 4.5.1–4.5.4. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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