Thaddeus J. Asel

929 total citations
31 papers, 747 citations indexed

About

Thaddeus J. Asel is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Thaddeus J. Asel has authored 31 papers receiving a total of 747 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Materials Chemistry, 22 papers in Electronic, Optical and Magnetic Materials and 12 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Thaddeus J. Asel's work include Ga2O3 and related materials (19 papers), ZnO doping and properties (17 papers) and Advanced Photocatalysis Techniques (12 papers). Thaddeus J. Asel is often cited by papers focused on Ga2O3 and related materials (19 papers), ZnO doping and properties (17 papers) and Advanced Photocatalysis Techniques (12 papers). Thaddeus J. Asel collaborates with scholars based in United States, Germany and France. Thaddeus J. Asel's co-authors include L. J. Brillson, Shin Mou, Adam T. Neal, Brenton A. Noesges, Jung-Woo Lee, Chang‐Beom Eom, Bumsu Park, M. S. Rzchowski, H. Lee and Evgeny Y. Tsymbal and has published in prestigious journals such as Nature Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Thaddeus J. Asel

26 papers receiving 735 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Thaddeus J. Asel United States 13 672 545 249 216 76 31 747
M. P. Scheglov Russia 14 451 0.7× 456 0.8× 232 0.9× 231 1.1× 83 1.1× 60 608
Masao Kita Japan 16 768 1.1× 329 0.6× 178 0.7× 429 2.0× 32 0.4× 40 832
Trevor L. Goodrich United States 12 569 0.8× 323 0.6× 73 0.3× 185 0.9× 66 0.9× 15 653
Daivasigamani Krishnamurthy Japan 8 865 1.3× 874 1.6× 384 1.5× 222 1.0× 127 1.7× 24 954
А. И. Печников Russia 17 722 1.1× 765 1.4× 457 1.8× 232 1.1× 134 1.8× 81 878
Y. J. Shin South Korea 14 558 0.8× 205 0.4× 164 0.7× 284 1.3× 110 1.4× 28 707
Ymir Kalmann Frodason Norway 15 620 0.9× 535 1.0× 266 1.1× 278 1.3× 28 0.4× 35 736
Zhuogeng Lin China 9 286 0.4× 206 0.4× 103 0.4× 195 0.9× 47 0.6× 26 399
H. U. Din Pakistan 18 1.1k 1.6× 154 0.3× 215 0.9× 505 2.3× 29 0.4× 42 1.1k

Countries citing papers authored by Thaddeus J. Asel

Since Specialization
Citations

This map shows the geographic impact of Thaddeus J. Asel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thaddeus J. Asel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thaddeus J. Asel more than expected).

Fields of papers citing papers by Thaddeus J. Asel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thaddeus J. Asel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thaddeus J. Asel. The network helps show where Thaddeus J. Asel may publish in the future.

Co-authorship network of co-authors of Thaddeus J. Asel

This figure shows the co-authorship network connecting the top 25 collaborators of Thaddeus J. Asel. A scholar is included among the top collaborators of Thaddeus J. Asel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thaddeus J. Asel. Thaddeus J. Asel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Noesges, Brenton A., Thaddeus J. Asel, Daniel M. Dryden, et al.. (2025). Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga2O3. Journal of Applied Physics. 138(11).
2.
Asel, Thaddeus J., et al.. (2025). The impact of device architecture on the thermal response of AlN/AlGaN digital alloy field-effect transistors. Applied Thermal Engineering. 276. 126677–126677.
3.
Mou, Shin, Thaddeus J. Asel, Adam T. Neal, et al.. (2024). Epitaxial growth of α-(AlxGa1−x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h. APL Materials. 12(4). 9 indexed citations
4.
Heinselman, Karen N., Thaddeus J. Asel, Brenton A. Noesges, et al.. (2024). Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time. Journal of Applied Physics. 135(1). 14 indexed citations
5.
6.
7.
Li, Jian V., Adam Charnas, Brenton A. Noesges, et al.. (2023). Admittance spectroscopy study of defects in β-Ga2O3. Thin Solid Films. 789. 140196–140196. 3 indexed citations
8.
Neal, Adam T., et al.. (2023). Effect of defects in capacitance-voltage measurement of doping profiles in Ga2O3. Thin Solid Films. 782. 140028–140028.
9.
Isaacs‐Smith, Tamara, et al.. (2022). High conductivity β-Ga2O3 formed by hot Si ion implantation. Applied Physics Letters. 121(26). 15 indexed citations
10.
McCandless, Jonathan P., Vladimir Protasenko, Adam T. Neal, et al.. (2022). Controlled Si doping of β -Ga2O3 by molecular beam epitaxy. Applied Physics Letters. 121(7). 32 indexed citations
11.
Chang, Celesta S., Nicholas Tanen, Vladimir Protasenko, et al.. (2021). γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films. APL Materials. 9(5). 33 indexed citations
12.
Asel, Thaddeus J., et al.. (2020). Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(4). 25 indexed citations
13.
Pancotti, A., Tyson C. Back, C. Lubin, et al.. (2020). Surface relaxation and rumpling of Sn-doped β−Ga2O3(010). Physical review. B.. 102(24). 7 indexed citations
14.
Asel, Thaddeus J., Brenton A. Noesges, Szu‐Chia Chien, et al.. (2020). Influence of Surface Chemistry on Water Absorption in Functionalized Germanane. Chemistry of Materials. 32(4). 1537–1544. 8 indexed citations
15.
Moser, Neil, Kyle J. Liddy, Ahmad E. Islam, et al.. (2020). Toward high voltage radio frequency devices in β-Ga2O3. Applied Physics Letters. 117(24). 37 indexed citations
16.
Chabak, Kelson D., Kevin Leedy, Andrew J. Green, et al.. (2019). Lateral β-Ga2O3 field effect transistors. Semiconductor Science and Technology. 35(1). 13002–13002. 99 indexed citations
17.
Karim, Md Rezaul, Susan White, Thaddeus J. Asel, et al.. (2018). Optical signatures of deep level defects in Ga2O3. Applied Physics Letters. 112(24). 133 indexed citations
18.
Lee, H., Neil Campbell, Jung-Woo Lee, et al.. (2018). Direct observation of a two-dimensional hole gas at oxide interfaces. Nature Materials. 17(3). 231–236. 160 indexed citations
19.
Barone, Matthew R., Jinsong Xu, Jyoti Katoch, et al.. (2017). Uniform large-area growth of nanotemplated high-quality monolayer MoS2. Applied Physics Letters. 110(26). 9 indexed citations
20.
Steenbergen, Elizabeth H., et al.. (2013). Impact of Be-doping on the material properties of InAs/InAsSb type-II superlattices for infrared detection. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8993. 89930X–89930X. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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