Nolan S. Hendricks

633 total citations
19 papers, 516 citations indexed

About

Nolan S. Hendricks is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Nolan S. Hendricks has authored 19 papers receiving a total of 516 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electronic, Optical and Magnetic Materials, 16 papers in Materials Chemistry and 8 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Nolan S. Hendricks's work include Ga2O3 and related materials (16 papers), ZnO doping and properties (13 papers) and Advanced Photocatalysis Techniques (8 papers). Nolan S. Hendricks is often cited by papers focused on Ga2O3 and related materials (16 papers), ZnO doping and properties (13 papers) and Advanced Photocatalysis Techniques (8 papers). Nolan S. Hendricks collaborates with scholars based in United States and Germany. Nolan S. Hendricks's co-authors include Andrew J. Green, Kelson D. Chabak, Kevin Leedy, Neil Moser, Gregg H. Jessen, Robert Fitch, Antonio Crespo, Stephen E. Tetlak, Kyle J. Liddy and Kohei Sasaki and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Nolan S. Hendricks

17 papers receiving 499 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nolan S. Hendricks United States 9 491 442 187 140 62 19 516
Takeki Itoh United States 14 592 1.2× 558 1.3× 333 1.8× 124 0.9× 95 1.5× 24 632
Daiki Wakimoto Japan 9 614 1.3× 576 1.3× 276 1.5× 106 0.8× 75 1.2× 12 629
Carl Peterson United States 12 463 0.9× 421 1.0× 244 1.3× 98 0.7× 47 0.8× 19 481
Etsuko Ohba Japan 7 560 1.1× 549 1.2× 340 1.8× 85 0.6× 28 0.5× 10 592
Boyuan Feng China 9 271 0.6× 264 0.6× 168 0.9× 67 0.5× 33 0.5× 19 307
Kazuaki Akaiwa Japan 8 443 0.9× 439 1.0× 278 1.5× 86 0.6× 23 0.4× 15 466
Masaya Oda Japan 8 392 0.8× 412 0.9× 259 1.4× 92 0.7× 26 0.4× 13 443
Vanessa Cascos Spain 14 313 0.6× 439 1.0× 59 0.3× 106 0.8× 52 0.8× 35 499
Chia-Hung Lin Japan 8 588 1.2× 552 1.2× 323 1.7× 112 0.8× 59 1.0× 14 615
Nidhin Kurian Kalarickal United States 13 627 1.3× 569 1.3× 296 1.6× 191 1.4× 118 1.9× 27 678

Countries citing papers authored by Nolan S. Hendricks

Since Specialization
Citations

This map shows the geographic impact of Nolan S. Hendricks's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nolan S. Hendricks with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nolan S. Hendricks more than expected).

Fields of papers citing papers by Nolan S. Hendricks

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nolan S. Hendricks. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nolan S. Hendricks. The network helps show where Nolan S. Hendricks may publish in the future.

Co-authorship network of co-authors of Nolan S. Hendricks

This figure shows the co-authorship network connecting the top 25 collaborators of Nolan S. Hendricks. A scholar is included among the top collaborators of Nolan S. Hendricks based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nolan S. Hendricks. Nolan S. Hendricks is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Liddy, Kyle J., Weisong Wang, Stefan Nikodemski, et al.. (2025). Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications. SHILAP Revista de lepidopterología. 1(1). 2 indexed citations
2.
Liddy, Kyle J., Nolan S. Hendricks, Weisong Wang, et al.. (2025). Near-ideal vertical β-Ga2O3 Schottky diode reverse leakage current via sputtered ultra-high-κ BaTiO3 dielectric field-management. SHILAP Revista de lepidopterología. 1(3).
3.
Ahmed, Shaikh, Ahmad E. Islam, Daniel M. Dryden, et al.. (2024). Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation. IEEE Transactions on Electron Devices. 71(9). 5305–5312. 3 indexed citations
4.
5.
Hendricks, Nolan S., Ahmad E. Islam, Daniel M. Dryden, et al.. (2024). Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes. Journal of Applied Physics. 135(9). 4 indexed citations
6.
Farzana, Esmat, Dennis R. Ball, Nolan S. Hendricks, et al.. (2024). Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics. IEEE Transactions on Nuclear Science. 71(4). 515–521. 19 indexed citations
7.
Hendricks, Nolan S., et al.. (2024). Analytical Determination of Majority Carrier Diode Losses in Power Switching and Perspective for Ultrawide Bandgap Semiconductors. IEEE Transactions on Electron Devices. 71(12). 7651–7658.
8.
Wang, Weisong, Nolan S. Hendricks, Daniel M. Dryden, et al.. (2024). Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(3). 4 indexed citations
9.
Hendricks, Nolan S., Esmat Farzana, Ahmad E. Islam, et al.. (2023). Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown. Applied Physics Express. 16(7). 71002–71002. 17 indexed citations
10.
11.
Farzana, Esmat, Saurav Roy, Nolan S. Hendricks, Sriram Krishnamoorthy, & James S. Speck. (2023). Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage. Applied Physics Letters. 123(19). 29 indexed citations
12.
13.
Islam, Ahmad E., Kyle J. Liddy, Daniel M. Dryden, et al.. (2022). 500 °C operation of β-Ga2O3 field-effect transistors. Applied Physics Letters. 121(24). 20 indexed citations
14.
Farzana, Esmat, Arkka Bhattacharyya, Nolan S. Hendricks, et al.. (2022). Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes. APL Materials. 10(11). 26 indexed citations
15.
Dryden, Daniel M., Kyle J. Liddy, Ahmad E. Islam, et al.. (2022). Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit. IEEE Electron Device Letters. 43(8). 1307–1310. 18 indexed citations
16.
Chabak, Kelson D., Kevin Leedy, Andrew J. Green, et al.. (2019). Lateral β-Ga2O3 field effect transistors. Semiconductor Science and Technology. 35(1). 13002–13002. 99 indexed citations
17.
Liddy, Kyle J., Nolan S. Hendricks, Andrew J. Green, et al.. (2019). Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs. 219–220. 2 indexed citations
18.
Liddy, Kyle J., Andrew J. Green, Nolan S. Hendricks, et al.. (2019). Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates. Applied Physics Express. 12(12). 126501–126501. 41 indexed citations
19.
Chabak, Kelson D., Jonathan P. McCandless, Neil Moser, et al.. (2017). Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs. IEEE Electron Device Letters. 39(1). 67–70. 214 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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