Sansaptak Dasgupta

755 total citations
23 papers, 636 citations indexed

About

Sansaptak Dasgupta is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Sansaptak Dasgupta has authored 23 papers receiving a total of 636 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Sansaptak Dasgupta's work include GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (14 papers) and Semiconductor materials and devices (11 papers). Sansaptak Dasgupta is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (14 papers) and Semiconductor materials and devices (11 papers). Sansaptak Dasgupta collaborates with scholars based in United States. Sansaptak Dasgupta's co-authors include Umesh K. Mishra, James S. Speck, Nidhi Nidhi, S. Keller, Feng Wu, David F. Brown, Jing Lu, Man Hoi Wong, Soojeong Choi and Siddharth Rajan and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Sansaptak Dasgupta

23 papers receiving 613 citations

Peers

Countries citing papers authored by Sansaptak Dasgupta

Since Specialization

Citations

This map shows the geographic impact of Sansaptak Dasgupta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sansaptak Dasgupta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sansaptak Dasgupta more than expected).

Fields of papers citing papers by Sansaptak Dasgupta

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sansaptak Dasgupta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sansaptak Dasgupta. The network helps show where Sansaptak Dasgupta may publish in the future.

Co-authorship network of co-authors of Sansaptak Dasgupta

This figure shows the co-authorship network connecting the top 25 collaborators of Sansaptak Dasgupta. A scholar is included among the top collaborators of Sansaptak Dasgupta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sansaptak Dasgupta. Sansaptak Dasgupta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper) 2019 ·Han Wui Then, Sansaptak Dasgupta, M. Radosavljević, (unknown), (unknown), P. Fischer	3
2	Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors 2013 ·Applied Physics Express ·Sansaptak Dasgupta, Jing Lu, (unknown), (unknown), Geetak Gupta, James S. Speck, Umesh K. Mishra	6
3	Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$ 2012 ·IEEE Electron Device Letters ·(unknown), Sansaptak Dasgupta, Jing Lu, S. Keller, Umesh K. Mishra	52
4	Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy 2012 ·Japanese Journal of Applied Physics ·Sansaptak Dasgupta, (unknown), James S. Speck, Umesh K. Mishra	5
5	Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm 2012 ·IEEE Electron Device Letters ·Nidhi Nidhi, Sansaptak Dasgupta, Jing Lu, James S. Speck, Umesh K. Mishra	27
6	N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications 2011 ·IEEE Electron Device Letters ·Nidhi Nidhi, Sansaptak Dasgupta, S. Keller, James S. Speck, Umesh K. Mishra	18
7	Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz 2011 ·Applied Physics Express ·Uttam Singisetti, Man Hoi Wong, Sansaptak Dasgupta, James S. Speck, Umesh K. Mishra	16
8	Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base 2011 ·IEEE Electron Device Letters ·Sansaptak Dasgupta, Nidhi Nidhi, (unknown), James S. Speck, Umesh K. Mishra	17
9	Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors 2011 ·Applied Physics Express ·Stephen W. Kaun, Man Hoi Wong, Sansaptak Dasgupta, Soojeong Choi, Roy B. Chung, Umesh K. Mishra, James S. Speck	67
10	Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth 2010 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Uttam Singisetti, Man Hoi Wong, Sansaptak Dasgupta, Nidhi Nidhi, Brian L. Swenson, B.J. Thibeault, James S. Speck, Umesh K. Mishra	3
11	N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications 2010 ·IEEE Electron Device Letters ·Nidhi Nidhi, Sansaptak Dasgupta, Yi Pei, Brian L. Swenson, S. Keller, James S. Speck, Umesh K. Mishra	14
12	Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth 2010 ·Applied Physics Letters ·Sansaptak Dasgupta, Nidhi Nidhi, David F. Brown, Feng Wu, S. Keller, James S. Speck, Umesh K. Mishra	122
13	N-polar GaN-based MIS-HEMTs for mixed signal applications 2010 ·2010 IEEE MTT-S International Microwave Symposium ·Umesh K. Mishra, Man Hoi Wong, Nidhi Nidhi, Sansaptak Dasgupta, David F. Brown, Brian L. Swenson, S. Keller, James S. Speck	1
14	T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f<inf>MAX</inf> of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs 2010 ·(unknown), Sansaptak Dasgupta, David F. Brown, S. Keller, James S. Speck, Umesh K. Mishra	2
15	Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth 2010 ·IEEE Electron Device Letters ·Uttam Singisetti, Man Hoi Wong, Sansaptak Dasgupta, (unknown), Brian L. Swenson, B.J. Thibeault, James S. Speck, Umesh K. Mishra	54
16	Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs 2010 ·IEEE Electron Device Letters ·(unknown), Sansaptak Dasgupta, David F. Brown, Uttam Singisetti, S. Keller, James S. Speck, Umesh K. Mishra	17
17	N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art f<inf>T</inf>.L<inf>G</inf> product of 16.8 GHz-µm 2009 ·Nidhi Nidhi, Sansaptak Dasgupta, David F. Brown, S. Keller, James S. Speck, Umesh K. Mishra	21
18	Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy 2009 ·Applied Physics Letters ·Sansaptak Dasgupta, Feng Wu, James S. Speck, Umesh K. Mishra	65
19	Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF₄-Treatment 2008 ·Applied Physics Express ·Rongming Chu, C. Poblenz, Man Hoi Wong, Sansaptak Dasgupta, Siddharth Rajan, Yi Pei, (unknown), Likun Shen, James S. Speck, Umesh K. Mishra	5
20	AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit 2008 ·Japanese Journal of Applied Physics ·(unknown), Sansaptak Dasgupta, Siddharth Rajan, James S. Speck, Umesh K. Mishra	69

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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