Kumud Ranjan

723 citations

42 papers · 578 indexed · h-index 15

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 39
- GaN-based semiconductor devices and materials 39
Electronic, Optical and Magnetic Materials 15
- Ga2O3 and related materials 15

Co-authors: Geok Ing Ng S. Arulkumaran S. Vicknesh Zhihong Liu Yu Gao Kian Siong Ang Tomás Palacios S. Tripathy
Journals: Applied Physics Express (7 papers)IEEE Electron Device Letters (5 papers)physica status solidi (a) (5 papers)Japanese Journal of Applied Physics (3 papers)Applied Physics Letters (3 papers)
Partner nations: Singapore Japan New Zealand

In The Last Decade

Kumud Ranjan

40 papers receiving 553 citations

Peers

Countries citing papers authored by Kumud Ranjan

Since Specialization

Citations

This map shows the geographic impact of Kumud Ranjan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kumud Ranjan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kumud Ranjan more than expected).

Fields of papers citing papers by Kumud Ranjan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kumud Ranjan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kumud Ranjan. The network helps show where Kumud Ranjan may publish in the future.

Co-authors

The 25 scholars most cited alongside Kumud Ranjan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Kumud Ranjan Line = papers co-authored together Kumud Ranjan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	GaN-on-Si HEMT for D-Band Power Amplification Demonstrating 0.67 W/mm at 10 V IEEE Electron Device Letters ·Hanchao Li, Qingyun Xie, Zhongzhiguang Lu, Hanlin Xie, Yihao Zhuang, Siyu Liu, Yuxuan Wang, Yue Wang, Kumud Ranjan, Xiao Gong, Yuanjin Zheng, Geok Ing Ng	2025	1
2	Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon physica status solidi (a) ·Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng	2025	0
3	Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si Applied Physics Letters ·Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng	2024	3
4	First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding physica status solidi (a) ·Hanchao Li, Hanlin Xie, Yue Wang, Yulia Lekina, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, S. Arulkumaran, Geok Ing Ng	2024	0
5	Multi-channel AlN/GaN Schottky barrier diodes Applied Physics Express ·Hanchao Li, Yue Wang, Qingyun Xie, Hanlin Xie, Hui Teng Tan, Pradip Dalapati, Siyu Liu, Kumud Ranjan, S.C. Foo, S. Arulkumaran, Chee Lip Gan, Geok Ing Ng	2024	1
6	Optimization of heat transfer in a solid torus: A parametric and numerical approach under natural convection Case Studies in Thermal Engineering ·Kumud Ranjan, Gloria Biswal, Sachindra Kumar Rout, Ahmed Kadhim Hussein, Aboulbaba Eladeb, Badr M. Alshammari, Lioua Kolsi	2024	1
7	AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets IEEE Electron Device Letters ·Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng	2024	5
8	Non-linear thermal resistance model for the simulation of high power GaN-based devices Semiconductor Science and Technology ·Sergio García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, Kumud Ranjan, M. Agrawal, R Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, Geok Ing Ng, T. González, J. Mateos	2021	10
9	Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency Sensors ·Abhinay Sandupatla, S. Arulkumaran, Kumud Ranjan, Geok Ing Ng, Peter P. Murmu, J. Kennedy, Shugo Nitta, Yoshio Honda, Manato Deki, Hiroshi Amano	2019	10
10	GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates AIP Advances ·Abhinay Sandupatla, S. Arulkumaran, Geok Ing Ng, Kumud Ranjan, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano	2019	13
11	Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation Kumud Ranjan, Geok Ing Ng, S. Arulkumaran, S. Vicknesh, S. C. Foo	2019	3
12	Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer Japanese Journal of Applied Physics ·S. Abhinay, S. Arulkumaran, Geok Ing Ng, Kumud Ranjan, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano	2019	8
13	Planar Nanostrip-Channel Al₂O₃/InAlN/GaN MISHEMTs on Si With Improved Linearity IEEE Electron Device Letters ·Weichuan Xing, Zhihong Liu, Kumud Ranjan, Geok Ing Ng, Tomás Palacios	2018	24
14	Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN Journal of Applied Physics ·Yunwei Li, Geok Ing Ng, S. Arulkumaran, G. Ye, Zhihong Liu, Kumud Ranjan, Kian Siong Ang	2017	33
15	Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) Applied Physics Letters ·Mulagumoottil Jesudas Anand, Geok Ing Ng, S. Arulkumaran, C. M. Manoj Kumar, Kumud Ranjan, S. Vicknesh, S. C. Foo, Binit Syamal, Xing Zhou	2015	18
16	Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors Applied Physics Letters ·S. Arulkumaran, Geok Ing Ng, C. M. Manoj Kumar, Kumud Ranjan, K. L. Teo, Omor Shoron, Siddharth Rajan, S. B. Dolmanan, S. Tripathy	2015	18
17	In<inf>0.17</inf>Al<inf>0.83</inf>N/AlN/GaN Triple T-shape Fin-HEMTs with g<inf>m</inf>=646 mS/mm, I<inf>ON</inf>=1.03 A/mm, I<inf>OFF</inf>=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at V<inf>D</inf>=0.5 V DR-NTU (Nanyang Technological University) ·S. Arulkumaran, Geok Ing Ng, C. M. Manojkumar, Kumud Ranjan, K. L. Teo, Omor Shoron, Siddharth Rajan, Surani Bin Dolmanan, S. Tripathy	2014	14
18	High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate IEEE Electron Device Letters ·S. Arulkumaran, Kumud Ranjan, Geok Ing Ng, C. M. Manoj Kumar, S. Vicknesh, Surani Bin Dolmanan, S. Tripathy	2014	28
19	Improved device isolation in AlGaN/GaN HEMTs on Si by heavy Kr<sup>+</sup> Ion implantation S. Arulkumaran, Geok Ing Ng, Kumud Ranjan, G. Z. Saw, Peter P. Murmu, J. Kennedy	2014	6
20	Distributed PKG ID based signcryption Anoop Pandey, Kumud Ranjan, Anant Agarwal, Neeraj Kumar	2011	3

About Kumud Ranjan

Kumud Ranjan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 42 papers that have together received 578 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (39 papers), Semiconductor materials and devices (23 papers), Ga2O3 and related materials (15 papers), Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor Quantum Structures and Devices (9 papers), Radio Frequency Integrated Circuit Design (9 papers), ZnO doping and properties (5 papers) and Metal and Thin Film Mechanics (2 papers). The work is most often cited by research in Condensed Matter Physics (525 citations), Electronic, Optical and Magnetic Materials (226 citations), Electrical and Electronic Engineering (435 citations), Atomic and Molecular Physics, and Optics (111 citations) and Materials Chemistry (106 citations). Kumud Ranjan has collaborated with scholars based in Singapore, Japan and New Zealand. Frequent co-authors include Geok Ing Ng, S. Arulkumaran, S. Vicknesh, Zhihong Liu, Yu Gao, Kian Siong Ang, Tomás Palacios, S. Tripathy, Kenneth E. Lee and Haodong Qiu. Their work appears in journals such as Applied Physics Express, IEEE Electron Device Letters, physica status solidi (a), Japanese Journal of Applied Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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