J.A. Roussos

1.6k total citations · 1 hit paper
49 papers, 1.3k citations indexed

About

J.A. Roussos is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.A. Roussos has authored 49 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 31 papers in Condensed Matter Physics and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.A. Roussos's work include GaN-based semiconductor devices and materials (31 papers), Semiconductor materials and devices (22 papers) and Radio Frequency Integrated Circuit Design (12 papers). J.A. Roussos is often cited by papers focused on GaN-based semiconductor devices and materials (31 papers), Semiconductor materials and devices (22 papers) and Radio Frequency Integrated Circuit Design (12 papers). J.A. Roussos collaborates with scholars based in United States, Italy and Greece. J.A. Roussos's co-authors include S.C. Binari, D. S. Katzer, A. E. Wickenden, D. D. Koleske, R. L. Henry, Doewon Park, David F. Storm, K. Ikossi, H.B. Dietrich and W. Kruppa and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

J.A. Roussos

47 papers receiving 1.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

2001 533 citations S.C. Binari, J.A. Roussos et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.A. Roussos United States	18	1.1k	974	498	320	290	49	1.3k
T. Kikkawa Japan	22	1.3k 1.1×	1.3k 1.3×	498 1.0×	258 0.8×	334 1.2×	80	1.6k
Shiping Guo United States	18	1.2k 1.0×	959 1.0×	636 1.3×	387 1.2×	436 1.5×	48	1.4k
P. Lorenzini France	19	1.1k 1.0×	701 0.7×	582 1.2×	450 1.4×	450 1.6×	63	1.4k
D. Buttari United States	18	1.3k 1.2×	990 1.0×	625 1.3×	360 1.1×	398 1.4×	39	1.5k
R. Coffie United States	19	1.5k 1.3×	1.1k 1.1×	647 1.3×	382 1.2×	375 1.3×	40	1.6k
P. Hashimoto United States	25	1.4k 1.2×	1.4k 1.4×	472 0.9×	155 0.5×	418 1.4×	44	1.6k
L. Kehias United States	10	948 0.8×	823 0.8×	337 0.7×	189 0.6×	288 1.0×	22	1.1k
K. Joshin Japan	24	1.0k 0.9×	1.6k 1.7×	305 0.6×	197 0.6×	503 1.7×	94	1.8k
Shawn D. Burnham United States	21	1.0k 0.9×	885 0.9×	402 0.8×	217 0.7×	323 1.1×	38	1.2k
Yasuo Ohno Japan	17	706 0.6×	832 0.9×	240 0.5×	179 0.6×	262 0.9×	90	1.0k

Countries citing papers authored by J.A. Roussos

Since Specialization

Citations

This map shows the geographic impact of J.A. Roussos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.A. Roussos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.A. Roussos more than expected).

Fields of papers citing papers by J.A. Roussos

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.A. Roussos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.A. Roussos. The network helps show where J.A. Roussos may publish in the future.

Co-authorship network of co-authors of J.A. Roussos

This figure shows the co-authorship network connecting the top 25 collaborators of J.A. Roussos. A scholar is included among the top collaborators of J.A. Roussos based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.A. Roussos. J.A. Roussos is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gokhale, Vikrant J., Albrecht Jander, Brian P. Downey, et al.. (2023). Dynamic Mode Suppression and Frequency Tuning in S-Band GaN/YIG Magnetoelastic HBARs. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control. 70(8). 876–884. 2 indexed citations

Gokhale, Vikrant J., Brian P. Downey, Pallavi Dhagat, et al.. (2022). HETEROGENEOUS INTEGRATION FOR HYBRID ACOUSTIC DEVICES: GAN/CU/YIG MAGNETOELASTIC HBARS. 39–42. 1 indexed citations

Jin, Eric N., Brian P. Downey, Vikrant J. Gokhale, et al.. (2021). Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures. APL Materials. 9(11). 8 indexed citations

Caddemi, Alina, et al.. (2020). Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction. IEEE Transactions on Microwave Theory and Techniques. 69(3). 1733–1739. 3 indexed citations

Growden, Tyler A., David F. Storm, E. R. Brown, et al.. (2020). Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes. Applied Physics Letters. 116(11). 27 indexed citations

Gokhale, Vikrant J., Brian P. Downey, Matthew T. Hardy, et al.. (2020). Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices. 1262–1265. 17 indexed citations

Anderson, Travis J., David J. Meyer, Andrew D. Koehler, et al.. (2017). Impact of 2 MeV Proton Irradiation on the Large-Signal Performance of Ka-Band GaN HEMTs. ECS Journal of Solid State Science and Technology. 6(11). S3110–S3113. 8 indexed citations

Meyer, David J., Andrew D. Koehler, Karl D. Hobart, et al.. (2014). Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors. IEEE Electron Device Letters. 35(10). 1013–1015. 31 indexed citations

Storm, David F., D. S. Katzer, David A. Deen, et al.. (2010). Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures. Solid-State Electronics. 54(11). 1470–1473. 19 indexed citations

10.

Deen, David A., S.C. Binari, David F. Storm, et al.. (2009). AlN/GaN insulated gate HEMTs with HfO ₂ gate dielectric. Electronics Letters. 45(8). 423–424. 18 indexed citations

11.

Storm, David F., D. S. Katzer, J.A. Roussos, et al.. (2007). AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization. Journal of Crystal Growth. 301-302. 429–433. 30 indexed citations

12.

Katzer, D. S., J. Mittereder, Steven C. Binari, David F. Storm, & J.A. Roussos. (2006). The Influence of Device Processing on GaN HEMT Reliability. ECS Meeting Abstracts. MA2006-02(32). 1544–1544.

13.

Katzer, D. S., J. Mittereder, Steven C. Binari, et al.. (2006). Study of the Impact of Electron Traps on GaN HEMT Reliability. ECS Transactions. 3(5). 151–160. 1 indexed citations

14.

Katzer, D. S., David F. Storm, S.C. Binari, et al.. (2003). Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs. 233–234. 2 indexed citations

15.

Anderson, W.T., J. Mittereder, & J.A. Roussos. (2003). Channel temperature measurement of GaAs devices using an atomic force microscope. 3–9. 3 indexed citations

16.

Katzer, D. S., David F. Storm, S.C. Binari, et al.. (2003). Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs. Journal of Crystal Growth. 251(1-4). 481–486. 29 indexed citations

17.

Klein, P. B., J. Mittereder, S.C. Binari, et al.. (2003). Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy. Electronics Letters. 39(18). 1354–1356. 7 indexed citations

18.

Storm, David F., D. S. Katzer, S.C. Binari, et al.. (2002). Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping. Applied Physics Letters. 81(20). 3819–3821. 26 indexed citations

19.

Roussos, J.A., et al.. (1992). Reliability study of a GaAs MMIC amplifier. ii. 327–331. 2 indexed citations

20.

Campbell, A.B., A.R. Knudson, Dale McMorrow, et al.. (1989). Ion induced charge collection in GaAs MESFETs. IEEE Transactions on Nuclear Science. 36(6). 2292–2299. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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