J.A. Roussos

1.6k citations

49 papers · 1.3k indexed · 1 hit paper · h-index 18

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 31
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 6
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 22
- Radio Frequency Integrated Circuit Design 12
- Silicon Carbide Semiconductor Technologies 10
- Advancements in Semiconductor Devices and Circuit Design 8
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 10
Materials Chemistry
Biomedical Engineering
- Acoustic Wave Resonator Technologies 6

Co-authors: S.C. Binari D. S. Katzer A. E. Wickenden D. D. Koleske R. L. Henry Doewon Park David F. Storm K. Ikossi
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (6 papers)Electronics Letters (4 papers)Applied Physics Letters (3 papers)
Partner nations: United States Italy Greece

In The Last Decade

J.A. Roussos

47 papers receiving 1.3k citations

Hit Papers

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Peers

Countries citing papers authored by J.A. Roussos

Since Specialization

Citations

This map shows the geographic impact of J.A. Roussos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.A. Roussos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.A. Roussos more than expected).

Fields of papers citing papers by J.A. Roussos

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.A. Roussos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.A. Roussos. The network helps show where J.A. Roussos may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J.A. Roussos, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.A. Roussos Line = papers co-authored together J.A. Roussos links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Dynamic Mode Suppression and Frequency Tuning in S-Band GaN/YIG Magnetoelastic HBARs IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ·Vikrant J. Gokhale,Albrecht Jander,Brian P. Downey,Pallavi Dhagat,Shawn Mack,D. S. Katzer,J.A. Roussos,David J. Meyer	2023	2
2	HETEROGENEOUS INTEGRATION FOR HYBRID ACOUSTIC DEVICES: GAN/CU/YIG MAGNETOELASTIC HBARS Vikrant J. Gokhale,Brian P. Downey,Pallavi Dhagat,Albrecht Jander,Shawn Mack,Wafia Tayor,J.A. Roussos,David H. Meyer	2022	1
3	Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures APL Materials ·Eric N. Jin,Brian P. Downey,Vikrant J. Gokhale,J.A. Roussos,Matthew T. Hardy,Tyler A. Growden,Neeraj Nepal,D. S. Katzer,J.P. Calame,David J. Meyer	2021	8
4	Cross-Laboratory Experimental Validation of a Tunerless Technique for the Microwave Noise Parameters Extraction IEEE Transactions on Microwave Theory and Techniques ·Alina Caddemi,E. Adee,Emanuele Cardillo,Giovanni Crupi,J.A. Roussos	2020	3
5	Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters ·Tyler A. Growden,David F. Storm,Lingjian Kong,E. R. Brown,Weidong Zhang,Brian P. Downey,J.A. Roussos,Nicholas Cronk,Laura B. Ruppalt,James G. Champlain,Paul R. Berger,David J. Meyer	2020	27
6	Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices Vikrant J. Gokhale,Brian P. Downey,Matthew T. Hardy,Eric N. Jin,J.A. Roussos,David J. Meyer	2020	17
7	Impact of 2 MeV Proton Irradiation on the Large-Signal Performance of Ka-Band GaN HEMTs ECS Journal of Solid State Science and Technology ·Travis J. Anderson,David J. Meyer,Andrew D. Koehler,J.A. Roussos,B. D. Weaver,Karl D. Hobart,Francis J. Kub	2017	8
8	Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors IEEE Electron Device Letters ·David J. Meyer,Andrew D. Koehler,Karl D. Hobart,Charles R. Eddy,Tatyana I. Feygelson,Travis J. Anderson,J.A. Roussos,Marko J. Tadjer,Brian P. Downey,D. S. Katzer,Bradford B. Pate,Mario G. Ancona	2014	31
9	Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Solid-State Electronics ·David F. Storm,D. S. Katzer,David A. Deen,Robert B. Bass,David J. Meyer,J.A. Roussos,S.C. Binari,T. Paskova,Edward A. Preble,K. R. Evans	2010	19
10	AlN/GaN insulated gate HEMTs with HfO ₂ gate dielectric Electronics Letters ·David A. Deen,S.C. Binari,David F. Storm,D. S. Katzer,J.A. Roussos,Justin C. Hackley,Theodosia Gougousi	2009	18
11	AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization Journal of Crystal Growth ·David F. Storm,D. S. Katzer,J.A. Roussos,J. Mittereder,Robert B. Bass,S.C. Binari,Drew Hanser,Edward A. Preble,K. R. Evans	2007	30
12	The Influence of Device Processing on GaN HEMT Reliability ECS Meeting Abstracts ·D. S. Katzer,J. Mittereder,Steven C. Binari,David F. Storm,J.A. Roussos	2006	0
13	Study of the Impact of Electron Traps on GaN HEMT Reliability ECS Transactions ·D. S. Katzer,J. Mittereder,Steven C. Binari,David F. Storm,J.A. Roussos,P. B. Klein	2006	1
14	Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs D. S. Katzer,David F. Storm,S.C. Binari,J.A. Roussos,B. V. Shanabrook,E. R. Glaser	2003	2
15	Channel temperature measurement of GaAs devices using an atomic force microscope W.T. Anderson,J. Mittereder,J.A. Roussos	2003	3
16	Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs Journal of Crystal Growth ·D. S. Katzer,David F. Storm,S.C. Binari,J.A. Roussos,B. V. Shanabrook,E. R. Glaser	2003	29
17	Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy Electronics Letters ·P. B. Klein,J. Mittereder,S.C. Binari,J.A. Roussos,D. S. Katzer,David F. Storm	2003	7
18	Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping Applied Physics Letters ·David F. Storm,D. S. Katzer,S.C. Binari,E. R. Glaser,B. V. Shanabrook,J.A. Roussos	2002	26
19	Reliability study of a GaAs MMIC amplifier Eugenio Carli,J.A. Roussos,W.T. Anderson	1992	2
20	Ion induced charge collection in GaAs MESFETs IEEE Transactions on Nuclear Science ·A.B. Campbell,A.R. Knudson,Dale McMorrow,Anne Lahdes,J.A. Roussos,Yuepeng Wang,S. Büchner,Keith Kang,D.V. Kerns,T.D. Rumyanceva	1989	44

About J.A. Roussos

J.A. Roussos is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 49 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (31 papers), Semiconductor materials and devices (22 papers), Radio Frequency Integrated Circuit Design (12 papers), Semiconductor Quantum Structures and Devices (10 papers), Silicon Carbide Semiconductor Technologies (10 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Ga2O3 and related materials (6 papers) and Acoustic Wave Resonator Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (498 citations), Electrical and Electronic Engineering (974 citations), Atomic and Molecular Physics, and Optics (290 citations) and Materials Chemistry (320 citations). J.A. Roussos has collaborated with scholars based in United States, Italy and Greece. Frequent co-authors include S.C. Binari, D. S. Katzer, A. E. Wickenden, D. D. Koleske, R. L. Henry, Doewon Park, David F. Storm, K. Ikossi, H.B. Dietrich and W. Kruppa. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Applied Physics Letters, Journal of Crystal Growth and IEEE Transactions on Nuclear Science.

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