Felix Ejeckam

1.4k citations

43 papers · 1.2k indexed · h-index 18

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices

Papers in

Condensed Matter Physics 25
- GaN-based semiconductor devices and materials 25
Electrical and Electronic Engineering 39
- Silicon Carbide Semiconductor Technologies 15
- Semiconductor materials and devices 11
- Semiconductor Lasers and Optical Devices 9
- Advanced Semiconductor Detectors and Materials 6

Co-authors: Firooz Faili Daniel Francis Yu‐Hwa Lo D.I. Babic B. E. Hammons H.Q. Hou J. Wasserbauer Z.H. Zhu
Journals: Applied Physics Letters (5 papers)IEEE Electron Device Letters (2 papers)Diamond and Related Materials (2 papers)Electronics Letters (2 papers)IEEE Transactions on Components Packaging and Manufacturing Technology (1 paper)
Partner nations: United States Croatia United Kingdom

In The Last Decade

Felix Ejeckam

38 papers receiving 1.1k citations

Peers

Countries citing papers authored by Felix Ejeckam

Since Specialization

Citations

This map shows the geographic impact of Felix Ejeckam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Felix Ejeckam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Felix Ejeckam more than expected).

Fields of papers citing papers by Felix Ejeckam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Felix Ejeckam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Felix Ejeckam. The network helps show where Felix Ejeckam may publish in the future.

Co-authors

The 25 scholars most cited alongside Felix Ejeckam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Felix Ejeckam Line = papers co-authored together Felix Ejeckam links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications ACS Applied Electronic Materials ·Pandillapalli Asha Jyothi, Qihe Wang, Daniel Francis, Jerome A. Cuenca, Piotr Sulikowski, D. Cherns, Oliver A. Williams, Felix Ejeckam, James W. Pomeroy, Martin Kuball	2025	1
2	Diamond for enhanced GaN device performance Felix Ejeckam, Daniel Francis, Firooz Faili, Fan Ming, Daniel J. Twitchen, Kelsey Wagner, D.I. Babic	2014	9
3	Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates David Altman, Vladimir Zatulkin, Nikhil Ruban, Samuel Kim, Samuel Graham, Jungwan Cho, Kenneth E. Goodson, Daniel Francis, Firooz Faili, Felix Ejeckam, S. D. Bernstein	2014	38
4	3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature Felix Ejeckam, D.I. Babic, Firooz Faili, Daniel Francis, И.Г Рогава, Quentin Diduck, A.Y. Drobychev, Daniel J. Twitchen, Kelsey Wagner	2014	16
5	GaN-on-Diamond: A Brief History Felix Ejeckam, 魏晓焱, Firooz Faili, 岸証, Fredy Alonso Patiño, D.I. Babic, P G Than	2014	5
6	AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz Electronics Letters ·D.C. Dumka, Tso-Min Chou, Firooz Faili, Daniel Francis, Felix Ejeckam	2013	62
7	175,000 device-hours operation of AlGaN/GaN HEMTs on diamond at 200°C channel temperature D.I. Babic, Quentin Diduck, A.Y. Drobychev, Daniel Francis, Firooz Faili, Felix Ejeckam	2013	1
8	Measurement of thermal boundary resistance in AlGaN/GaN HEMTs using Liquid Crystal Thermography International Convention on Information and Communication Technology, Electronics and Microelectronics ·D.I. Babic, Quentin Diduck, J. Smart, Daniel Francis, Firooz Faili, Felix Ejeckam	2012	2
9	GaN-on-diamond field-effect transistors: from wafers to amplifier modules D.I. Babic, Quentin Diduck, Lian-shun Liu, Anja Schreiber, Daniel Francis, Firooz Faili, Felix Ejeckam, P G Than, L.F. Eastman	2010	14
10	Frequency performance enhancement of AlGaN/GaN HEMTs on diamond Electronics Letters ·Quentin Diduck, P G Than, L.F. Eastman, Daniel Francis, J. Wasserbauer, Firooz Faili, 聡仁静野, Felix Ejeckam	2009	28
11	Comparison of GaN HEMTs on Diamond and SiC Substrates IEEE Electron Device Letters ·P G Than, M. Faruk Us, Heymans Patrick, L.F. Eastman, J. Wasserbauer, Firooz Faili, D.I. Babic, Daniel Francis, Felix Ejeckam	2007	125
12	Diamond cools high-power transistors Daniel Francis, J. Wasserbauer, D.I. Babic, Firooz Faili, Felix Ejeckam	2007	4
13	GaN-HEMT Epilayers on Diamond Substrates: Recent Progress Daniel Francis, J. Wasserbauer, Firooz Faili, D.I. Babic, Felix Ejeckam, Woonggi Hong, P. Specht, E. R. Weber	2007	21
14	High-performance InGaAs photodetectors on Si and GaAs substrates Felix Ejeckam, C.L. Chua, Z.H. Zhu, Yu‐Hwa Lo	2002	1
15	Comparison of MBE grown InSb on CU substrates using different sacrificial layers Cheryl Craig, D. H. Tomich, Kurt G. Eyink, W. V. Lampert, Felix Ejeckam, Yu‐Hwa Lo	1997	0
16	Lattice engineered compliant substrate for defect-free heteroepitaxial growth Applied Physics Letters ·Felix Ejeckam, Yu‐Hwa Lo, Shanthi Subramanian, H.Q. Hou, B. E. Hammons	1997	103
17	Reliability studies of wafer-bonded InGaAs P-I-N photodetectors on GaAs substrates Conference on Lasers and Electro-Optics ·Felix Ejeckam, C.L. Chua, Z.H. Zhu, Yu‐Hwa Lo, Minghui Hong, J. P. Mannáerts, R. Bhat	1996	1
18	Photopumped long wavelength vertical-cavity surface-emitting lasers using strain-compensated multiple quantum wells Applied Physics Letters ·Chyi‐Yeu Lin, C.L. Chua, Z.H. Zhu, Felix Ejeckam, Torgova Sofia, Yu‐Hwa Lo, R. Bhat	1994	12
19	How micro is microdissection? Laser removal of stratum corneum of skin to expose the epidermal battery Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Steven L. Jacques, Felix Ejeckam, Frank K. Tittel	1993	1
20	Growing Pseudomorphic Layers Beyond the Critical Thickness Using Free-Standing Compliant Substrates MRS Proceedings ·C.L. Chua, Windsor Hsu, Felix Ejeckam, Alex Tran, Yu‐Hwa Lo	1993	1

About Felix Ejeckam

Felix Ejeckam is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Materials Chemistry, having authored 43 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), Semiconductor Quantum Structures and Devices (15 papers), Silicon Carbide Semiconductor Technologies (15 papers), Semiconductor materials and devices (11 papers), Metal and Thin Film Mechanics (10 papers), Semiconductor Lasers and Optical Devices (9 papers), Thermal properties of materials (7 papers) and Advanced Semiconductor Detectors and Materials (6 papers). The work is most often cited by research in Condensed Matter Physics (622 citations), Electrical and Electronic Engineering (882 citations), Materials Chemistry (523 citations), Mechanics of Materials (264 citations) and Atomic and Molecular Physics, and Optics (254 citations). Felix Ejeckam has collaborated with scholars based in United States, Croatia and United Kingdom. Frequent co-authors include Firooz Faili, Daniel Francis, Yu‐Hwa Lo, D.I. Babic, B. E. Hammons, H.Q. Hou, J. Wasserbauer, Z.H. Zhu, Shanthi Subramanian and Humphrey J. Maris. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Diamond and Related Materials, Electronics Letters and IEEE Transactions on Components Packaging and Manufacturing Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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