Steven Boeykens

527 total citations
10 papers, 448 citations indexed

About

Steven Boeykens is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, Steven Boeykens has authored 10 papers receiving a total of 448 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Condensed Matter Physics, 5 papers in Electrical and Electronic Engineering and 3 papers in Mechanics of Materials. Recurrent topics in Steven Boeykens's work include GaN-based semiconductor devices and materials (10 papers), Semiconductor materials and devices (5 papers) and Silicon Carbide Semiconductor Technologies (3 papers). Steven Boeykens is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), Semiconductor materials and devices (5 papers) and Silicon Carbide Semiconductor Technologies (3 papers). Steven Boeykens collaborates with scholars based in Belgium and Czechia. Steven Boeykens's co-authors include Maarten Leys, Stefan Degroote, Kai Cheng, Marianne Germain, G. Borghs, Joff Derluyn, Wouter Ruythooren, J. Das, Benny Van Daele and Gustaaf Van Tendeloo and has published in prestigious journals such as Journal of Applied Physics, Journal of Crystal Growth and Journal of Electronic Materials.

In The Last Decade

Steven Boeykens

9 papers receiving 420 citations

Peers

Countries citing papers authored by Steven Boeykens

Since Specialization

Citations

This map shows the geographic impact of Steven Boeykens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steven Boeykens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steven Boeykens more than expected).

Fields of papers citing papers by Steven Boeykens

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steven Boeykens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steven Boeykens. The network helps show where Steven Boeykens may publish in the future.

Co-authorship network of co-authors of Steven Boeykens

This figure shows the co-authorship network connecting the top 25 collaborators of Steven Boeykens. A scholar is included among the top collaborators of Steven Boeykens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Steven Boeykens. Steven Boeykens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

#	Work	Indexed citations
1	Deep defects in GaN/AlGaN/SiC heterostructures 2009 ·Journal of Applied Physics ·D. Kindl, Pavel Hubı́k, J. Krištofik, Jiřı́ J. Mareš, (unknown), Maarten Leys, Steven Boeykens	23
2	Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H‐SiC 2006 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Steven Boeykens, Maarten Leys, Marianne Germain, Kai Cheng, Joff Derluyn, Benny Van Daele, Gustaaf Van Tendeloo, Ronnie Belmans, G. Borghs	6
3	Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers 2006 ·Journal of Electronic Materials ·Kai Cheng, Maarten Leys, Stefan Degroote, Benny Van Daele, Steven Boeykens, Joff Derluyn, Marianne Germain, Gustaaf Van Tendeloo, Jan Engelen, G. Borghs	102
4	AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4 2006 ·Journal of Crystal Growth ·Kai Cheng, Maarten Leys, Joff Derluyn, Stefan Degroote, Dongping Xiao, Anne Lorenz, Steven Boeykens, Marianne Germain, G. Borghs	47
5	Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer 2005 ·Journal of Applied Physics ·Joff Derluyn, Steven Boeykens, Kai Cheng, (unknown), J. Das, Wouter Ruythooren, Stefan Degroote, Maarten Leys, Marianne Germain, G. Borghs	179
6	Effect of V/III ratio in AlN and AlGaN MOVPE 2005 ·Journal of Crystal Growth ·(unknown), (unknown), Р.А. Талалаев, Maarten Leys, Steven Boeykens, Kai Cheng, Stefan Degroote	72
7	Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes 2005 ·MRS Proceedings ·Steven Boeykens, Maarten Leys, Marianne Germain, Jef Poortmans, Benny Van Daele, (unknown), Ronnie Belmans, Gustaaf Borghs	0
8	Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC 2004 ·Journal of Crystal Growth ·Steven Boeykens, Maarten Leys, Marianne Germain, Ronnie Belmans, G. Borghs	6
9	SURFACE STABILIZATION FOR HIGHER PERFORMANCE ALGAN/GAN HEMT WITH IN-SITU MOVPE SIN 2004 ·MRS Proceedings ·(unknown), Mark Leys, Joff Derluyn, Steven Boeykens, Stefan Degroote, Wouter Ruythooren, J. Das, (unknown), Dongping Xiao, (unknown), G. Borghs	6
10	High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers. 2003 ·MRS Proceedings ·Marianne Germain, Maarten Leys, Steven Boeykens, Stefan Degroote, Wenfei Wang, Dominique Schreurs, Wouter Ruythooren, Kang‐Hoon Choi, Benny Van Daele, Gustaaf Van Tendeloo, Gustaaf Borghs	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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