Firooz Faili

1.6k citations

49 papers · 1.3k indexed · h-index 21

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Materials Chemistry top 5%
- Thermal properties of materials
- Diamond and Carbon-based Materials Research
- ZnO doping and properties

Papers in

Condensed Matter Physics 30
- GaN-based semiconductor devices and materials 30
Mechanics of Materials 22
- Metal and Thin Film Mechanics 19

Co-authors: Daniel Francis Felix Ejeckam Daniel J. Twitchen Martin Kuball D.I. Babic James W. Pomeroy Roland B. Simon Huarui Sun
Journals: IEEE Electron Device Letters (4 papers)Applied Physics Letters (4 papers)Scripta Materialia (2 papers)Diamond and Related Materials (2 papers)Electronics Letters (2 papers)
Partner nations: United States United Kingdom Croatia

In The Last Decade

Firooz Faili

47 papers receiving 1.2k citations

Peers

Countries citing papers authored by Firooz Faili

Since Specialization

Citations

This map shows the geographic impact of Firooz Faili's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Firooz Faili with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Firooz Faili more than expected).

Fields of papers citing papers by Firooz Faili

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Firooz Faili. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Firooz Faili. The network helps show where Firooz Faili may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Firooz Faili, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Firooz Faili Line = papers co-authored together Firooz Faili links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Diamond Resistives - The Passive Way to Manage the Heat and Keep the VSWR Low at High Frequencies Firooz Faili, G. T. Williams, Andrés Pascual Garrido Alfonso, Daniel J. Twitchen	2019	1
2	Physical and Thermal Characterization of CVD Diamond: A Bottoms-up Review Firooz Faili, Salehi B., Seajin Oh, Daniel J. Twitchen	2017	6
3	Ultraviolet and visible micro‐Raman and micro‐photoluminescence spectroscopy investigations of stress on a 75‐mm GaN‐on‐diamond wafer Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·А.А. Аравенков, Érica Ap. Garrutti de Lourenço, Jonathan Anderson, E. L. Piner, Firooz Faili, Seajin Oh, Daniel Francis, Daniel J. Twitchen, Samuel Graham, M. Holtz	2017	4
4	Near-ultraviolet micro-Raman study of diamond grown on GaN Applied Physics Letters ·Mohammad Nazari, Liang Zhu, Jonathan Anderson, A. Savage, E. L. Piner, Samuel Graham, Firooz Faili, Se‐Joon Oh, Daniel Francis, Daniel J. Twitchen, M. Holtz	2016	14
5	Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer Applied Physics Letters ·Liang Zhu, Mohammad Nazari, Jonathan Anderson, E. L. Piner, Firooz Faili, Se‐Joon Oh, Daniel J. Twitchen, Samuel Graham, M. Holtz	2016	27
6	GaN-on-diamond: Robust mechanical and thermal properties Explore Bristol Research ·Huarui Sun, Dong Liu, James W. Pomeroy, Daniel Francis, Firooz Faili, Daniel J. Twitchen, Martin Kuball	2016	3
7	Elimination of Leakage in GaN-on-Diamond Brian Alvarez, Daniel Francis, Firooz Faili, И.Г Рогава, Daniel J. Twitchen, Mehmet Seçkin Kurubaş, P. A. Houston	2016	4
8	Rapid Characterization of GaN-on-diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance Bristol Research (University of Bristol) ·Huarui Sun, James W. Pomeroy, Roland B. Simon, Daniel Francis, Firooz Faili, Daniel J. Twitchen, Martin Kuball	2015	4
9	Diamond for enhanced GaN device performance Felix Ejeckam, Daniel Francis, Firooz Faili, Fan Ming, Daniel J. Twitchen, Kelsey Wagner, D.I. Babic	2014	9
10	Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates David Altman, Vladimir Zatulkin, Nikhil Ruban, Samuel Kim, Samuel Graham, Jungwan Cho, Kenneth E. Goodson, Daniel Francis, Firooz Faili, Felix Ejeckam, S. D. Bernstein	2014	38
11	3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature Felix Ejeckam, D.I. Babic, Firooz Faili, Daniel Francis, И.Г Рогава, Quentin Diduck, A.Y. Drobychev, Daniel J. Twitchen, Kelsey Wagner	2014	16
12	GaN-on-Diamond: A Brief History Felix Ejeckam, 魏晓焱, Firooz Faili, 岸証, Fredy Alonso Patiño, D.I. Babic, P G Than	2014	5
13	AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz Electronics Letters ·D.C. Dumka, Tso-Min Chou, Firooz Faili, Daniel Francis, Felix Ejeckam	2013	62
14	175,000 device-hours operation of AlGaN/GaN HEMTs on diamond at 200°C channel temperature D.I. Babic, Quentin Diduck, A.Y. Drobychev, Daniel Francis, Firooz Faili, Felix Ejeckam	2013	1
15	Measurement of thermal boundary resistance in AlGaN/GaN HEMTs using Liquid Crystal Thermography International Convention on Information and Communication Technology, Electronics and Microelectronics ·D.I. Babic, Quentin Diduck, J. Smart, Daniel Francis, Firooz Faili, Felix Ejeckam	2012	2
16	GaN-on-diamond field-effect transistors: from wafers to amplifier modules D.I. Babic, Quentin Diduck, Lian-shun Liu, Anja Schreiber, Daniel Francis, Firooz Faili, Felix Ejeckam, P G Than, L.F. Eastman	2010	14
17	Frequency performance enhancement of AlGaN/GaN HEMTs on diamond Electronics Letters ·Quentin Diduck, P G Than, L.F. Eastman, Daniel Francis, J. Wasserbauer, Firooz Faili, 聡仁静野, Felix Ejeckam	2009	28
18	Comparison of GaN HEMTs on Diamond and SiC Substrates IEEE Electron Device Letters ·P G Than, M. Faruk Us, Heymans Patrick, L.F. Eastman, J. Wasserbauer, Firooz Faili, D.I. Babic, Daniel Francis, Felix Ejeckam	2007	125
19	Diamond cools high-power transistors Daniel Francis, J. Wasserbauer, D.I. Babic, Firooz Faili, Felix Ejeckam	2007	4
20	GaN-HEMT Epilayers on Diamond Substrates: Recent Progress Daniel Francis, J. Wasserbauer, Firooz Faili, D.I. Babic, Felix Ejeckam, Woonggi Hong, P. Specht, E. R. Weber	2007	21

About Firooz Faili

Firooz Faili is a scholar working on Condensed Matter Physics, Mechanics of Materials, Electrical and Electronic Engineering, Materials Chemistry and Ceramics and Composites, having authored 49 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (30 papers), Silicon Carbide Semiconductor Technologies (22 papers), Thermal properties of materials (19 papers), Metal and Thin Film Mechanics (19 papers), Semiconductor materials and devices (18 papers), Diamond and Carbon-based Materials Research (13 papers), Semiconductor Quantum Structures and Devices (4 papers) and Advancements in Semiconductor Devices and Circuit Design (4 papers). The work is most often cited by research in Condensed Matter Physics (833 citations), Materials Chemistry (880 citations), Mechanics of Materials (403 citations), Electrical and Electronic Engineering (884 citations) and Electronic, Optical and Magnetic Materials (122 citations). Firooz Faili has collaborated with scholars based in United States, United Kingdom and Croatia. Frequent co-authors include Daniel Francis, Felix Ejeckam, Daniel J. Twitchen, Martin Kuball, D.I. Babic, James W. Pomeroy, Roland B. Simon, Huarui Sun, J. Wasserbauer and Kenneth E. Goodson. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Scripta Materialia, Diamond and Related Materials and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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