С. С. Пушкарев

460 citations

69 papers · 329 indexed · h-index 10

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 47
- Semiconductor materials and interfaces 13
Electrical and Electronic Engineering
- Advanced Semiconductor Detectors and Materials 17
- Terahertz technology and applications 13
Astronomy and Astrophysics top 10%
- Superconducting and THz Device Technology 11
Condensed Matter Physics
- GaN-based semiconductor devices and materials 9
Spectroscopy
- Spectroscopy and Laser Applications 7
Biomedical Engineering
- Nanowire Synthesis and Applications 13

Co-authors: Г. Б. Галиев E. A. Klimov P. P. Maltsev И. С. Васильевский Р. А. Хабибуллин A. E. Yachmenev Д. С. Пономарев R. R. Reznik
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Astronomy and Astrophysics
Journals: SHILAP Revista de lepidopterología (1 paper)Journal of Applied Physics (1 paper)Journal of materials research/Pratt's guide to venture capital sources (1 paper)
Partner nations: Russia Ukraine Belarus

In The Last Decade

С. С. Пушкарев

58 papers receiving 302 citations

Peers

Countries citing papers authored by С. С. Пушкарев

Since Specialization

Citations

This map shows the geographic impact of С. С. Пушкарев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by С. С. Пушкарев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites С. С. Пушкарев more than expected).

Fields of papers citing papers by С. С. Пушкарев

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by С. С. Пушкарев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by С. С. Пушкарев. The network helps show where С. С. Пушкарев may publish in the future.

Co-authorship network

The 25 scholars most cited alongside С. С. Пушкарев, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with С. С. Пушкарев Line = papers co-authored together С. С. Пушкарев links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Generation of THz Radiation by (100), (110), and (111)A-Oriented Multiple Pseudomorphic InGaAs/GaAs Quantum Wells and Photoconductive Antennas Bulletin of the Lebedev Physics Institute ·E. A. Klimov,А. Н. Клочков,P. M. Solyankin,Anton Sinko,A. Yu. Pavlov,D. V. Lavrukhin,С. С. Пушкарев	2024	0
2	Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing Materials Science in Semiconductor Processing ·Ivan Podlesnykh,M. S. Kovalev,Alena Nastulyavichus,Nikita Stsepuro,С. С. Пушкарев,E.A. Kozlova,V. A. Dravin,Andrey Vlasov,P.V. Platonov,S. I. Kudryashov	2024	2
3	Influence of the Built-in Piezoelectric Field on the Photoluminescence Spectra of Strained Superlattices InGaAs/GaAs on GaAs (110) and (111)A Substrates E.A. Klimov,С. С. Пушкарев,A.N. Klochkov	2022	1
4	X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer Crystallography Reports ·M. S. Folomeshkin,Yu. A. Volkovsky,П. А. Просеков,Г. Б. Галиев,E. A. Klimov,А. Н. Клочков,С. С. Пушкарев,A. Yu. Seregin,Yu. V. Pisarevsky,А. Е. Благов,M. V. Kovalchuk	2022	1
5	Photoluminescence of extended defects in heterostructures with InAlAs metamorphic buffer at different excitation wavelengths Journal of Luminescence ·С. С. Пушкарев,Г. Б. Галиев,E. A. Klimov,V. B. Kopylov	2020	1
6	Generation of Terahertz Radiation by Low-Temperature Multilayer Epitaxial Films of i-LT-GaAs/n-GaAs on GaAs Substrates with (100) and (111)A Orientations A. M. Buryakov,(unknown),Vladislav Bilyk,Е. Д. Мишина,Г. Б. Галиев,Evgeniy A. Klimov,P. P. Maltsev,С. С. Пушкарев	2017	2
7	Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates Crystallography Reports ·Г. Б. Галиев,E. A. Klimov,A. L. Vasiliev,Р. М. Имамов,С. С. Пушкарев,I. N. Trunkin,P. P. Maltsev	2017	4
8	Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers International Journal of Modern Physics B ·D. I. Khusyainov,C. Dekeyser,A. M. Buryakov,Е. Д. Мишина,Г. Б. Галиев,E. A. Klimov,С. С. Пушкарев,А. Н. Клочков	2017	6
9	Генерация терагерцевого излучения в низкотемпературных эпитаксиальных пленках InGaAs на подложках InP с ориентациями (100) и (411) A Физика и техника полупроводников ·Г. Б. Галиев,М. М. Грехов,G. Kh. Kitaeva,E. A. Klimov,А. Н. Клочков,O. S. Kolentsova,V. V. Kornienko,К. А. Кузнецов,P. P. Maltsev,С. С. Пушкарев	2017	0
10	High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ·Г. Б. Галиев,E. A. Klimov,Р. М. Имамов,G. V. Ganin,С. С. Пушкарев,P. P. Maltsev,О. М. Жигалина,Andrey Orekhov,А. Л. Васильев,M. Yu. Presniakov,I. N. Trunkin	2016	0
11	Electrophysical and structural properties of the composite quantum wells In_0.52Al_0.48As/In_xGa_1−xAs/In_0.52Al_0.48As with ultrathin InAs inserts Journal of materials research/Pratt's guide to venture capital sources ·Г. Б. Галиев,И. С. Васильевский,E. A. Klimov,С. С. Пушкарев,А. Н. Клочков,P. P. Maltsev,Mihail Yuryevich Presniakov,I. N. Trunkin,A. L. Vasiliev	2015	4
12	Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well Semiconductors ·Г. Б. Галиев,И. С. Васильевский,E. A. Klimov,А. Н. Клочков,D. V. Lavruhin,С. С. Пушкарев,P. P. Maltsev	2015	9
13	Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well Semiconductors ·Г. Б. Галиев,И. С. Васильевский,E. A. Klimov,А. Н. Клочков,D. V. Lavruhin,С. С. Пушкарев,P. P. Maltsev	2015	3
14	Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures Crystallography Reports ·Г. Б. Галиев,E. A. Klimov,А. Н. Клочков,P. P. Maltsev,С. С. Пушкарев,О. М. Жигалина,Р. М. Имамов,А. Н. Кускова,Д. Н. Хмеленин	2013	2
15	Relativistic magnetron of 8 mm waveband The scientific electronic library of periodicals of the National Academy of Sciences of Ukraine (National Academy of Sciences of Ukraine) ·I. I. Magda,N. P. Gadetski,E. I. Kravtsova,С. С. Пушкарев,V. D. Naumenko,S. N. Terekhin,A. S. Tishchenko	2008	0
16	Collective ion acceleration by a modulated high-current REB V. A. Balakirev,A. M. Gorban’,I. I. Magda,В. Е. Новиков,I.N. Onishchenko,С. С. Пушкарев	1997	0
17	Generation of high-power ultrashort microwave pulses and their effect on electronic devices S. B. Bludov,N.P. Gadetskii,K. A. Kravtsov,Yu.F. Lonin,I. I. Magda,S.I. Naisteter,E. A. Prasol,Yu. V. Prokopenko,С. С. Пушкарев,Yu.V. Tkach,I. F. Kharchenko,Volodymyr Chumakov	1994	2
18	Emission by a relativistic beam at a magneto-Cerenkov resonance in a periodic waveguide Iu. V. Tkach,N.P. Gadetskii,Iu. P. Bliokh,E. A. Lemberg,M. G. Liubarskii,V. V. Emolenko,V. V. Diatlova,S.I. Naisteter,I. I. Magda,С. С. Пушкарев	1979	6
19	Microwave emission in the interaction of a high-current relativistic beam with a plasma-filled slow-wave structure Iu. V. Tkach,Ia. B. Fainberg,I. I. Magda,N. I. Gaponenko,G. V. Skachek,С. С. Пушкарев,N.P. Gadetskii,A. A. Belukha	1975	3
20	Transmission of a high-current relativistic beam through a gas Soviet physics. Technical physics ·Yu.V. Tkach,I. I. Magda,G. V. Skachek,С. С. Пушкарев,I. P. Panchenko	1974	1

About С. С. Пушкарев

С. С. Пушкарев is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 69 papers that have together received 329 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (47 papers), Advanced Semiconductor Detectors and Materials (17 papers), Semiconductor materials and interfaces (13 papers), Terahertz technology and applications (13 papers), Nanowire Synthesis and Applications (13 papers), Superconducting and THz Device Technology (11 papers), GaN-based semiconductor devices and materials (9 papers) and Spectroscopy and Laser Applications (7 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (233 citations), Electrical and Electronic Engineering (264 citations) and Astronomy and Astrophysics (72 citations). С. С. Пушкарев has collaborated with scholars based in Russia, Ukraine and Belarus. Frequent co-authors include Г. Б. Галиев, E. A. Klimov, P. P. Maltsev, И. С. Васильевский, Р. А. Хабибуллин, A. E. Yachmenev, Д. С. Пономарев, R. R. Reznik, Р. М. Имамов and Е. Д. Мишина. Their work appears in journals such as SHILAP Revista de lepidopterología, Journal of Applied Physics and Journal of materials research/Pratt's guide to venture capital sources.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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