G.J. Dunn

686 total citations
21 papers, 530 citations indexed

About

G.J. Dunn is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Surfaces, Coatings and Films. According to data from OpenAlex, G.J. Dunn has authored 21 papers receiving a total of 530 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 2 papers in Condensed Matter Physics and 2 papers in Surfaces, Coatings and Films. Recurrent topics in G.J. Dunn's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Advanced Memory and Neural Computing (8 papers). G.J. Dunn is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Advanced Memory and Neural Computing (8 papers). G.J. Dunn collaborates with scholars based in United States, Italy and Kazakhstan. G.J. Dunn's co-authors include Patrick M. Lenahan, Shelley A. Scott, E. Cartier, D. A. Buchanan, P.W. Wyatt, H. E. Boesch, B.S. Doyle, C.G. Sodini, P. M. Lenahan and Rahul Jayaraman and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

G.J. Dunn

21 papers receiving 510 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G.J. Dunn United States 14 515 139 51 50 37 21 530
K.S. Krisch United States 12 675 1.3× 171 1.2× 66 1.3× 46 0.9× 49 1.3× 23 694
K. Reid United States 8 320 0.6× 168 1.2× 91 1.8× 37 0.7× 24 0.6× 22 381
Jack Yuan-Chen Sun United States 10 607 1.2× 196 1.4× 233 4.6× 23 0.5× 41 1.1× 12 642
Kazunori Moriki Japan 13 270 0.5× 165 1.2× 135 2.6× 22 0.4× 16 0.4× 37 363
Kenichi Ohtsuka Japan 11 292 0.6× 177 1.3× 146 2.9× 16 0.3× 25 0.7× 37 383
P. E. R. Nordquist United States 7 261 0.5× 67 0.5× 130 2.5× 37 0.7× 15 0.4× 21 301
C. Ance France 11 359 0.7× 242 1.7× 199 3.9× 27 0.5× 26 0.7× 35 425
Toshihiro Uchiyama Japan 9 334 0.6× 189 1.4× 163 3.2× 36 0.7× 41 1.1× 18 405
Masakazu Ohishi Japan 10 283 0.5× 266 1.9× 192 3.8× 25 0.5× 16 0.4× 54 372
R. P. Gnall United States 12 437 0.8× 39 0.3× 152 3.0× 18 0.4× 15 0.4× 24 477

Countries citing papers authored by G.J. Dunn

Since Specialization
Citations

This map shows the geographic impact of G.J. Dunn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.J. Dunn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.J. Dunn more than expected).

Fields of papers citing papers by G.J. Dunn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.J. Dunn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.J. Dunn. The network helps show where G.J. Dunn may publish in the future.

Co-authorship network of co-authors of G.J. Dunn

This figure shows the co-authorship network connecting the top 25 collaborators of G.J. Dunn. A scholar is included among the top collaborators of G.J. Dunn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.J. Dunn. G.J. Dunn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Dunn, G.J., et al.. (2022). Chain and silk: alternative futures of blockchain governance in Kyrgyzstan. European Journal of Futures Research. 10(1). 4 indexed citations
2.
Cartier, E., D. A. Buchanan, & G.J. Dunn. (1994). Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon. Applied Physics Letters. 64(7). 901–903. 63 indexed citations
3.
Doyle, B.S. & G.J. Dunn. (1992). Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET's. IEEE Electron Device Letters. 13(1). 38–40. 7 indexed citations
4.
Lenahan, Patrick M., et al.. (1992). Electron spin resonance study of radiation-induced points defects in nitrided and reoxidized nitrided oxides. IEEE Transactions on Nuclear Science. 39(6). 2211–2219. 24 indexed citations
5.
Lenahan, Patrick M., et al.. (1992). Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide. Journal of Applied Physics. 72(2). 820–821. 12 indexed citations
6.
Dunn, G.J., B. Groß, & C.G. Sodini. (1992). Radiation-induced increase in the inversion layer mobility of reoxidized nitrided oxide MOSFETs. IEEE Transactions on Electron Devices. 39(3). 677–684. 12 indexed citations
7.
Doyle, B.S., K. Mistry, & G.J. Dunn. (1991). Reoxidized nitrided oxides (RNO) for latent ESD-resistant MOSFET dielectrics. IEEE Electron Device Letters. 12(4). 184–186. 7 indexed citations
8.
Lenahan, Patrick M., et al.. (1991). Direct observation of interfacial point defects generated by channel hot hole injection in n-channel metal oxide silicon field effect transistors. Applied Physics Letters. 59(26). 3437–3439. 56 indexed citations
9.
Dunn, G.J.. (1991). Effect of synchrotron X-ray radiation on the channel hot-carrier reliability of reoxidized nitrided silicon dioxide. IEEE Electron Device Letters. 12(1). 8–9. 13 indexed citations
10.
Lenahan, P. M., et al.. (1991). Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon. Applied Physics Letters. 58(19). 2141–2143. 30 indexed citations
11.
Dunn, G.J., et al.. (1991). Channel hot-carrier stressing of reoxidized nitrided oxide p-MOSFETs. IEEE Transactions on Electron Devices. 38(4). 901–906. 40 indexed citations
12.
Doyle, B.S. & G.J. Dunn. (1991). Dynamic hot-carrier stressing of reoxidized nitrided oxide. IEEE Electron Device Letters. 12(2). 63–65. 17 indexed citations
13.
Dunn, G.J. & Shelley A. Scott. (1990). Channel hot-carrier stressing of reoxidized nitrided silicon dioxide. IEEE Transactions on Electron Devices. 37(7). 1719–1726. 58 indexed citations
14.
Dunn, G.J.. (1989). Hole trapping in reoxidized nitrided silicon dioxide. Journal of Applied Physics. 65(12). 4879–4883. 27 indexed citations
15.
Dunn, G.J. & P.W. Wyatt. (1989). Reoxidized nitrided oxide for radiation-hardened MOS devices. IEEE Transactions on Nuclear Science. 36(6). 2161–2168. 38 indexed citations
16.
Dunn, G.J.. (1989). Effect of an Al overlayer on interface states in poly-Si gate MOS capacitors. IEEE Electron Device Letters. 10(7). 333–335. 7 indexed citations
17.
Dunn, G.J.. (1988). Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing. Applied Physics Letters. 53(17). 1650–1651. 21 indexed citations
18.
Dunn, G.J., Rahul Jayaraman, Weishen Yang, & C.G. Sodini. (1988). Radiation effects in low-pressure reoxidized nitrided oxide gate dielectrics. Applied Physics Letters. 52(20). 1713–1715. 31 indexed citations
19.
Kaufmann, Henry C., William B. Thompson, & G.J. Dunn. (1986). Fib Mask Repair With Microtrim. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 632. 60–60. 6 indexed citations
20.
Cleaver, J. R. A., H. Ahmed, P.J. Heard, et al.. (1985). Focused ion beam repair techniques for clear and opaque defects in masks. Microelectronic Engineering. 3(1-4). 253–260. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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