Nanbo Gong

1.3k total citations
26 papers, 846 citations indexed

About

Nanbo Gong is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Nanbo Gong has authored 26 papers receiving a total of 846 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 4 papers in Polymers and Plastics. Recurrent topics in Nanbo Gong's work include Advanced Memory and Neural Computing (12 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Semiconductor materials and devices (10 papers). Nanbo Gong is often cited by papers focused on Advanced Memory and Neural Computing (12 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Semiconductor materials and devices (10 papers). Nanbo Gong collaborates with scholars based in United States, Taiwan and China. Nanbo Gong's co-authors include Tso‐Ping Ma, Hao Jiang, Qiangfei Xia, Takashi Ando, T. P., Xiao Sun, Seyoung Kim, Vijay Narayanan, Abu Sebastian and Irem Boybat and has published in prestigious journals such as Nature Communications, Nano Letters and Applied Physics Letters.

In The Last Decade

Nanbo Gong

22 papers receiving 823 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nanbo Gong United States 12 818 381 63 58 32 26 846
Shosuke Fujii Japan 15 706 0.9× 238 0.6× 51 0.8× 48 0.8× 42 1.3× 53 748
Lu Tai China 14 585 0.7× 332 0.9× 34 0.5× 24 0.4× 34 1.1× 48 620
Jianchi Zhang China 7 1.0k 1.2× 409 1.1× 89 1.4× 77 1.3× 65 2.0× 15 1.1k
Jin Feng Leong Singapore 11 496 0.6× 290 0.8× 100 1.6× 62 1.1× 53 1.7× 17 604
Melanie Herzig Germany 8 417 0.5× 235 0.6× 51 0.8× 31 0.5× 34 1.1× 15 473
Xiaohe Huang China 12 450 0.6× 340 0.9× 60 1.0× 41 0.7× 39 1.2× 22 614
Sumeet K. Gupta United States 8 372 0.5× 168 0.4× 45 0.7× 33 0.6× 16 0.5× 12 395

Countries citing papers authored by Nanbo Gong

Since Specialization
Citations

This map shows the geographic impact of Nanbo Gong's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nanbo Gong with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nanbo Gong more than expected).

Fields of papers citing papers by Nanbo Gong

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nanbo Gong. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nanbo Gong. The network helps show where Nanbo Gong may publish in the future.

Co-authorship network of co-authors of Nanbo Gong

This figure shows the co-authorship network connecting the top 25 collaborators of Nanbo Gong. A scholar is included among the top collaborators of Nanbo Gong based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nanbo Gong. Nanbo Gong is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hou, Feng, Lei-Lei Li, Xiaoning Cai, et al.. (2025). Development of a structural model with dynamic thermal conductivity for composite phase change materials: Numerical and experimental investigations. Case Studies in Thermal Engineering. 72. 106348–106348.
3.
Sun, De’an, et al.. (2025). Analytical heat transfer model of energy piles in layered and anisotropic soils considering interfacial thermal resistance. International Journal of Thermal Sciences. 217. 110115–110115.
4.
Beckmann, Karsten, Natalya Tokranova, Sandra Schujman, et al.. (2024). Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer. Materials Science in Semiconductor Processing. 186. 109060–109060.
5.
Gong, Nanbo, et al.. (2023). Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning. Scientific Reports. 13(1). 14963–14963. 19 indexed citations
6.
Gong, Nanbo, R. Muralidhar, P. M. Solomon, et al.. (2023). ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array. IEEE Transactions on Electron Devices. 70(11). 5972–5976. 1 indexed citations
7.
Cheng, Huai‐Yu, Wei-Chih Chien, C. W. Yeh, et al.. (2022). New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project. 2022 International Electron Devices Meeting (IEDM). 18.5.1–18.5.4. 6 indexed citations
8.
Chien, Wei-Chih, Nanbo Gong, C. W. Yeh, et al.. (2022). Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project. 327–329. 2 indexed citations
9.
Chien, Wei-Chih, Nanbo Gong, C. W. Yeh, et al.. (2022). Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme. P7–1. 1 indexed citations
10.
Han, Jin‐Ping, Malte J. Rasch, P. M. Solomon, et al.. (2020). Impact of PCM Flicker Noise and Weight Drift on Analog Hardware Inference for state-of-the-art Deep Learning Networks. 1 indexed citations
11.
Zheng, Qilin, Zongwei Wang, Nanbo Gong, et al.. (2019). Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics. IEEE Electron Device Letters. 40(8). 1309–1312. 66 indexed citations
12.
Cartier, E., Wanki Kim, Nanbo Gong, et al.. (2019). Reliability Challenges with Materials for Analog Computing. 1–10. 11 indexed citations
13.
Bruce, Robert L., Takeshi Masuda, Nanbo Gong, et al.. (2019). Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning. T66–T67. 55 indexed citations
14.
Ma, T.P. & Nanbo Gong. (2019). Retention and Endurance of FeFET Memory Cells. 1–4. 21 indexed citations
15.
Gong, Nanbo, Wei-Chih Chien, A. Ray, et al.. (2019). Superb Endurance and Appropriate Vth of PCM Pillar Cell using Buffer Layer for 3D Cross-Point Memory. 1–4. 4 indexed citations
16.
Gong, Nanbo, Seyoung Kim, Irem Boybat, et al.. (2018). Signal and noise extraction from analog memory elements for neuromorphic computing. Nature Communications. 9(1). 2102–2102. 86 indexed citations
17.
Chang, Sung‐Jae, Hong Zhou, Nanbo Gong, et al.. (2017). Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs. IEEE Electron Device Letters. 38(4). 441–444. 8 indexed citations
18.
Gong, Nanbo & Tso‐Ping Ma. (2017). A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation. IEEE Electron Device Letters. 39(1). 15–18. 205 indexed citations
19.
Gong, Nanbo & Tso‐Ping Ma. (2016). Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective. IEEE Electron Device Letters. 37(9). 1123–1126. 198 indexed citations
20.
Gong, Nanbo, Runsheng Wang, Changze Liu, Jibin Zou, & Ru Huang. (2012). On the AC random telegraph noise (RTN) in MOS devices: An improved multi-phonon based model. 204. 1–3. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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